K 4014 Search Results

Contextual Info: FM25V01 128-Kbit 16 K x 8 Serial (SPI) F-RAM 128-Kbit (16 K × 8) Serial (SPI) F-RAM Features Functional Overview • 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24V05 512-Kbit 64 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24W256 256-Kbit 32 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

Contextual Info: 9 =W S age P H Ro oir / See CONDENSATEURS CERAMIQUE MONOCOUCHES SINGLE LAYER CERAMIC CAPACITORS V Tangente ␦ et facteur Q Tangent ␦ and Q factor A Hyperfréquence K⍜ = 100 ± 30 ppm / °C Q à / to 1 MHz у 10000 B Classe 1 NPO K⍜ = 0 ± 30 ppm / °C

ic 4814

Abstract: 4914 4914a S4414 ON 4914 4714
Contextual Info: 7 cn ü ? m Q ü ü m * îb h b SANKEN « sakj T-1 1/2 Contact Mount Type SEL 4014 Series Non-Diffused SEL 4 7 1 4 K SEL 4814 A SEL 4914 A SEL 4114 S SEL 4 2 1 4 S SEL 4414 E SA N K EN LIG HT E M IT T IN G DIO DES FEATURES • C o n ta c t - M o u n ta b le on C ir c u it B o a r d ,

10MSA

Contextual Info: MLO AC Controller 1~ / 2~ / 3~ 'R M S = 30-143 A v RRM Type □ ^RMS ^TSM Tc = 85°C V mO V T0 rT p thJC Package style thJK per Chip per Chip o z °C K/W K/W ÌT 60 V V A MLO 36-12io1 MLO 36-16io1 1200 1600 400 500 1x42 360 0.85 15 125 1.3 1.5 MLO 75-12io1

60-16io7

Abstract: 10MSA
Contextual Info: vwo AC Controller 1~ / 2~ / 3~ Irm s = MMO MLO 39 - 143 A V RRM Type ► New , w VW 2x. v vRMS rT V T0 ^RMS *TSM Tc =85*C V p p thJC thJH °C K/W K/W ^*VJM Package style per Chip per Chip d Z V V A 45°C 10 ms A 3x39 320 0.85 13 125 1.3 1.5 62 m 05 u_ VWO

27C1100

Abstract: TTL COMPATIBLE 4016 27C110
Contextual Info: M X 2 7 C 1 i0 0 / 2 7 C 1 024 1 M -B IT 1 2 B K X 8 /6 4 K x 1 8 ] CM OS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

BA6473FP

Abstract: fdd motor driver FDD service 600rpm MMC 7PIN BA6472FP BA6471FP V11L 6PIN20
Contextual Info: O A iS fiffl IC /I C s for OA Applications ROHM CO LTD 40E B A6471FP/BA6472FP/BA6473FP D 00040R2 HRHM — FD D Z £ ° > K M / * - * K 7 < / < B A 6 4 7 1 F P /B A 3 4 7 2 F P Motor Driver for FD D S pindle B M 473FP 7-S 2 -Z 2 -C ,l * BA6471FP, BA6472FP, BA6473FP f i ,

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

Contextual Info: I CSR21 MIL-C-39003/09 Solid Tantalum Capacitors MaulorY i i i i a t i i i i a i i i i i i i i i a a M K i a i i t a a i K i i i v i i t i i i i i i i i i i i t d i i i i i i i i i i i s High Frequency Operation High Ripple Capability GENERAL SPECIFICATIONS

VEB mikroelektronik

Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
Contextual Info: DATEN DIGITALER INTEGRIERTER SCHALTKREISE AMATEUR BIBLIOTHEK Klaus K.Streng Streng, Klaus K.: Daten digitaler integrierter Schaltkreise CMOS-Schaltkreise . Berlin: Militirverlag der DDR. 1987. - 192 S.: 314 Bilder (Amateurbibliothek) ISBN 3-327-00360-2 l. Auflage, 1987

ic cmos 4014

Abstract: 4bit straight adpcm method m5218 l
Contextual Info: O K I Semiconductor MSM5218 ADPCM Voice Analysis/Synthesis IC GENERAL DESCRIPTION The MSM5218 is a complete voice analysis/synthesis IC featuring the Adaptive Differential Pulse Code Modulation ADPCM method of data compression. The MSM5218 contains an analysis stage

4914

Abstract: ON 4914 4414 A 4714 8 4114R lf r626
Contextual Info: 7^0741 0 0 0 1 4 ^ 2 247 « S A K J SANKEN T-1 1/2 Contact Mount Type SEL 4014 Series Diffused SEL 4114 R SEL 4214 R SEL4414 G SANKEN LIGHT EMITTING DIODES SEL 4714 Y SEL 4814 D SEL 4914 D FEATURES • C ontact - M ountable on C irc u it Board, Mounting Requires Only a Small Space

4bit straight adpcm method

Abstract: 4014PS ic 5218 a MSM5218
Contextual Info: O K I Semiconductor MSM5218 ADPCM Voice Analysis/Synthesis 1C GENERAL DESCRIPTION The MSM5218 is a complete voice analysis/synthesis IC featuring the Adaptive Differential Pulse Code M odulation ADPCM method of data compression. The MSM5218 contains an analysis stage