K 3511 Search Results

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description[1] • Registered inputs and outputs for pipelined operation ■ 128 K × 32 common I/O architecture ■ 3.3 V core power supply (VDD)

INTEL-PENTIUM

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation ■ 256 K × 18 common I/O Architecture ■ 3.3 V core power supply (VDD)

cy7c1339g-133axi

Abstract: c1339g
Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

AN54908

Abstract: CY7C1327G
Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description The CY7C1327G SRAM[1] integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description The CY7C1339G [1] SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are

Contextual Info: CY7C1327G 4-Mbit 256 K x 18 Pipelined Sync SRAM 4-Mbit (256 K × 18) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

cy7c1041dv

Abstract: 10bv CY7C1041DV33
Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take

Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Functional Description Features The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take chip enable (CE) and write enable (WE) inputs LOW. If byte low

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

ITT DIODE

Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
Contextual Info: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: - D ata R A M / ROM bit 6k X 2 3 - - 8kx23 W ork RAM (bit) LCD segm ent Model No. I k x 8 /2 5 6 x 4 480 SM3503 1 5 1 2 X 8 /2 5 6 X 4 480 SM3504 < 5 1 2 X 8 /2 5 6 X 4 384 SM3507 2 k X 8 /2 5 6 X 4 540 SM3509 8 k X 8 /2 5 6 X 4 540 SM3512 MICROCOMPUTERS