K 351 TRANSISTOR Search Results

Contextual Info: 25Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

431k varistor

Abstract: 14n 431K varistor
Contextual Info: 25M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 150V to 1200V.

471kd20 varistor

Abstract: 271KD20J 751KD20
Contextual Info: 20Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 20Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

821KD14J

Abstract: 391KD14 223 Varistor 104271k 271kd14 470KD14 511KD14-j 180kd14 511KD14 VARISTOR 390KD14
Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33 ■

Contextual Info: CY7C1352G 4-Mbit 256 K x 18 Pipelined SRAM with NoBL Architecture 4-Mbit (256 K × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1329H 2-Mbit 64 K x 32 Pipelined Sync SRAM 2-Mbit (64 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1329H SRAM integrates 64 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

ADNS9500

Abstract: Avago adns-9500
Contextual Info: ADNS-9500 LaserStream Gaming Sensor Data Sheet Description Features The ADNS-9500 LaserStream gaming sensor comprises of sensor and VCSEL in a single chip-on-board COB package. ADNS-9500 provides enhanced features like programmable frame rate, programmable resolution, configurable sleep and wake up time to suit various PC gamers’

ADNS9500

Abstract: Avago adns-9500
Contextual Info: ADNS-9500 LaserStream Gaming Sensor Data Sheet Description Features The ADNS-9500 LaserStream gaming sensor comprises of sensor and VCSEL in a single chip-on-board COB package. ADNS-9500 provides enhanced features like programmable frame rate, programmable resolution, configurable sleep and wake up time to suit various PC gamers’

Contextual Info: CY7C1440AV33 36-Mbit 1 M x 36 Pipelined Sync SRAM 36-Mbit (1 M × 36) Pipelined Sync SRAM Features Functional Description • Supports bus operation up to 250 MHz ■ Available speed grades are 250 and 167 MHz ■ Registered inputs and outputs for pipelined operation

Contextual Info: CY7C1460AV33 CY7C1462AV33 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT ■

Contextual Info: TLC3704ĆQ1 QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS SGLS191 − JUNE 2004 D Qualification in Accordance With D PACKAGE TOP VIEW AEC-Q100† D Qualified for Automotive Applications D Customer-Specific Configuration Control D D D D D D Can Be Supported Along With

Contextual Info: Introduction This manual provides the information needed to configure the IQX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the IQX devices. In addition, this manual explains how the boundary scan features implemented in the IQX devices can be used

QFN-44 PCB Layout guide

Abstract: ESSA3 example C codes pic18f for sd card ZD 103 ma 18F2510
Contextual Info: PIC18F2X1X/4X1X Data Sheet 28/40/44-Pin Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 2006 Microchip Technology Inc. Preliminary DS39636B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

diagrams hitachi ecu

Abstract: transistor W2E HEV40M Y3FS wxg led HD6433292F u33x R4EE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PIC18F97J94

Abstract: PIC18F65J94 PIC18F87J94 jedec Package TO-39 PIC18F66J CHHN 035 Full-bridge series resonant converter sck1r0 PIC18F67J94 lcd panel schema
Contextual Info: PIC18F97J94 FAMILY 8-Bit LCD Flash Microcontroller with USB and XLP Technology Extreme Low-Power Features: Peripheral Features continued : • Multiple Power Management Options for Extreme Power Reduction: - VBAT allows for lowest power consumption on back-up battery (with or without RTCC)

Contextual Info: User’s Manual 16 R8C/54E Group, R8C/54F Group, R8C/54G Group, R8C/54H Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/5x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: User's Manual 32 R32C/157 Group User’s Manual: Hardware R32C/157 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: User's Manual 32 R32C/116 Group User’s Manual: Hardware R32C/116 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: User’s Manual 16 R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.