K 30 S Search Results

STK 100W

Abstract: 4204M STK 60w 5 4154M 4144M STK4234 circuit STK 300 STK4234 4194MK5 4145M
Contextual Info: • Main Characteristics ■ STK4144MK2 series/STK4144MK5 series/STK4145MK2 series/S T \ 4 1 4 5 M K 5 series Type Number STK 4144M K 2 STK 4154M K 2 STK 4164M K 2 STK 4174M K 2 Output power PofW] 25 30 35 40 + + + + Vcc max[V] 25 30 35 40 STK 4184M K 2 & STK 4194M K 2

Contextual Info: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation

OT 180

Contextual Info: — 2 12 — P AL32V X 1O Series 24 # A s tl m ax di ti c lo c k X / max L tw c lo c k H - m in STD A2 A4 B B2 m ìa m ax 35 30 ns max 30 25 ns m ax 15 15 ns m in 2 2 .5 25 M Hz min 20 18 ns m in 20 18 ns ns t,u in p u t m in 30 T 25 T thuld fe e d b a c k

80703

Abstract: 80502
Contextual Info: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are

J113A

Abstract: 610J KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A
Contextual Info: — 196 — ft -k B & KV1580A-1 Mit Tan p mW 1Ü0 KV1580NT Mit Tun 100 KV1580TL00 Tun KV1580TK00 Tun KV1581 100 veo ICO Æ fc Vrm Yr (V) (V) 30 30 30 30 KV1581A-2 Mit Tun 100 30 KV15S1A-3 Mit Tun 100 30 KV1582M Mit Tun 100 30 KV1583A Mit Tun 100 30 KV1583BM

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

Contextual Info: LTO 30 Vishay Sfernice 30 W Power Resistor Thick Film Technology FEATURE • 30 W at 25 °C case temperature heatsink mounted  Direct mounting ceramic on heatsink  Broad resistance range: 0.010  to 550 k  Non inductive  TO-220 package: Compact and easy to mount

R0100

Abstract: R4700
Contextual Info: LTO 30 Vishay Sfernice 30 W Power Resistor Thick Film Technology FEATURE • 30 W at 25 °C case temperature heatsink mounted  Direct mounting ceramic on heatsink  Broad resistance range: 0.010  to 550 k  Non inductive  TO-220 package: Compact and easy to mount

Contextual Info: iirwumelektfonik 3 3 U-Extruded heatsinks art. no. Rth [K/W] 15 IC K 3 5 S A art. no. TO 220 Rth [K/W] S K 12 S A 2 x 3 2 2 X SOT 32 1 X SOT 32 15 30 S K 12 S A 32 art. no. Rth [K/W] 17 17 17 S K 13 3 5 S A 2 2 0 S K 13 3 5 S A 2 2 0 3,2 S K 13 3 5 S A 2 2 0 3,5

ad8601

Abstract: ad5263
Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C

AD8501

Abstract: FDV301N AD5280 AD5282 RU-14 TSSOP-16 ADR512
Contextual Info: Single/Dual, +15 V/±5 V, 256-Position, I2C-Compatible Digital Potentiometer AD5280/AD5282 FEATURES APPLICATIONS AD5280: 1 channel AD5282: 2 channels 256 positions 5 V to 15 V single supply; ±5.5 V dual-supply operation 20 kΩ, 50 kΩ, 200 kΩ Low temperature coefficient 30 ppm/°C

emg block diagram

Abstract: 22k potentiometer POTENTIOMETER 10K LIN POTENTIOMETER 4K7 LIN potentiometer 4k7 block diagram of EMG
Contextual Info: Module no:2940265 LabelId:2940265 Operator:Phoenix 18:15:21, Donnerstag, 28. Juni 2001 EMG 30-SP/.K LIN Housing width 30 M3 8 IEC rigid solid 2 [mm ] Connection data 0.2-4 flexible stranded AWG 0.2-2.5 24-12 Order No. Pcs. Pkt. EMG 30-SP/ 1K LIN 29 40 26 5

2sc1472

Abstract: Hitachi DSA002754
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage

Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)

STPR1620CT

Abstract: diode k 0368 STPR16*0CT STPR1620 STPR1620CG STPR1620CG-TR STPR1620CR STRP1620CT
Contextual Info: STPR1620CG/CT/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV A1 2x8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns K A2 K K A2 A1 D2PAK STPR1620CG FEATURES • ■ ■ ■ SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY

ad5263

Contextual Info: FEATURES 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C Voltage divider temperature coefficient 5 ppm/°C

PEMB1

Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

Contextual Info: 7_ X 30 E i n l ö t - K o n t a k t e Kontaktanordnung 30 s o l d e r - c o n t a c t s z 2:1 c o n t a c t arrangement _a — c solder-contact 8 * 5 -0.1 Kontaktposition nicht belegt X 1 0 , 5 ±0,1 E i n l ö t - K o n t akt LochbiId p o s i t i o n w it h ou t c o n t a c t

Contextual Info: 4 K x 16 FourPort STATIC RAM MULTICHIP MODULE PRELIMINARY IDT70M74 Integrated Device Technology, Inc. FEATURES: • High density 64K-bit FourPort™ static RAM multichip module • High-speed access — Commercial: 25, 30, 35, 45ns max. — Military: 30, 35, 45ns (max.)

Contextual Info: LOW INPUT CURRENT HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES . FEATURES DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5000 Vr.m.s. • HIGH SPEED SWITCHING tr = 30 us, tf = 30 us TYP, @ Rl_ = 10 k ft PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically

AC TO DC DIODE BRIDGE

Abstract: ME700803 power circuit of three phase control rectifier A three-phase diode bridge rectifier powerex ME70
Contextual Info: ME700803 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 30 Amperes/800 Volts K F K Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applications. The modules are isolated

DB4058W

Abstract: DB8945 DB980 DB874H Decibel Products DB225 antenna ASP-2015 DB884H ASP-712 db205 antenna ASP-685
Contextual Info: INDEX db TransTelecom ASP-2011 Antennas. 9 Cables, Connectors, Acc.125 12038 Sway Brace K its .19, 25 ASP-2015 Antennas. 30 ASP-2894 Antennas. 100

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 MHz L 2.2 µH ±20% Rated current ∆T = 20 K IR 900 mA typ. Rated current ∆T = 40 K IR 1200 mA typ. Saturation current |ΔL/L| = 30%