K 30 S Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

STK 100W

Abstract: 4204M STK 60w 5 4154M 4144M STK4234 circuit STK 300 STK4234 4194MK5 4145M
Contextual Info: • Main Characteristics ■ STK4144MK2 series/STK4144MK5 series/STK4145MK2 series/S T \ 4 1 4 5 M K 5 series Type Number STK 4144M K 2 STK 4154M K 2 STK 4164M K 2 STK 4174M K 2 Output power PofW] 25 30 35 40 + + + + Vcc max[V] 25 30 35 40 STK 4184M K 2 & STK 4194M K 2

0130160000

Contextual Info: Terminal / us SAKL 4 / . Potentiometer 00 ' Available Options c_> Version 10 Q SAKL 4/10 PA 0649160000 30 Q SAKL 4/30 PA 0524060000 500 Q SAKL 4/500 PA 0643860000 1 kQ SAKL 4/1 k PA 0648960000 5 kQ SAKL 4/5 k PA 0648860000 10 kQ SAKL 4/10 k PA 0632260000

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

PAL20X4

Contextual Info: PAL20X4 -205 - Series 24 m A b * t} ifl X in p u t fe e d b a c k z tpri e n a b le X c lo c k / max c lo c k L m ax STD A A2 m ax 50 30 35 ns m ax 45 30 35 ns m ax 35 30 25 ns m ax 30 15 25 ” ns A4 B B2 C « min 1 2 .5 2 2 .2 16 m in 35 25 25 MHz ns min

PAL20X8

Contextual Info: — 20 4 — PAL20X8 Series 24 m b * X nput fe e d b a c k m ax m in STD A A2 m ax 50 30 35 ns m ax 45 30 35 ns B A4 B2 C tpd e n a b le c lo c k X /max- c lo c k L max 35 30 25 ns max 30 15 25 ns m in 1 2 .5 2 2 .2 16 MHz m in 35 25 25 ns m in 25 15 25

4-225

Abstract: FR 422 Q200
Contextual Info: - 30 - d I 'S ^ m Í ’V t - K A U * +• ~j 7°

S863

Abstract: ntc 30 k NTC SIEMENS K 30 S869 ntc TNT0030-S NTC 1K S863
Contextual Info: Heißleiter NTC NTC Thermistors Temperaturmessung Temperature measurement Minifühler Mini sensors Maßbild Typ Outline drawing Type Nenn­ widerstand Rated resistance ^25 Q S863 1 k 3 k 5 k 10 k 30 k 50 k 100 k 0 2 ,8 m a x \l/ \ sD I | ¡ W s N i/ P T F E

2SK68A

Abstract: 2SK44 D 2SK70 2SK79 2SK63 2SK44 2SK68 2SK73 2SK163 2SK46
Contextual Info: - 30 - f m « tt « ffl m & ft 5fi K 2SK43 S> 'K- 2SK44 2SK44(IH 2SK45 NEC 2SK47 NBC * -30 0 DC, LF A. A-SW w D -30 GDO LF LN A N' D -20 GDS LF LN A N D -20 GDS DC, RF N D -22 GDO N D -30 GDO N D -20 GDO C—MIC 2SK46 (V) LF A, RF 1 /E. Vg s * X * t (V)

PDTA115EE

Contextual Info: DISCRETE SEMICONDUCTORS DAT PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Contextual Info: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation

Contextual Info: P-Mathew Nebu 2011/05/26 P-Mathew Nebu 2012/08/30 - - ELX-I-012613-1 K-Paul Biju 2012/08/30 Released J PDS: Rev :J STATUS:Released Printed: Aug 31, 2012

MPC555

Abstract: QADC64
Contextual Info: TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC555.K Mask Set: 01K02A General Business Use Report Generated: Thu Mar 30, 2000, 13:53:03 Page 1 = | MPC555.K 01K02A Modules |

OT 180

Contextual Info: — 2 12 — P AL32V X 1O Series 24 # A s tl m ax di ti c lo c k X / max L tw c lo c k H - m in STD A2 A4 B B2 m ìa m ax 35 30 ns max 30 25 ns m ax 15 15 ns m in 2 2 .5 25 M Hz min 20 18 ns m in 20 18 ns ns t,u in p u t m in 30 T 25 T thuld fe e d b a c k

Contextual Info: Thermocouple Wire MADE IN Duplex Insulated K Duplex Insulated CHROMEGA -ALOMEGA® Duplex ANSI Type K AWG No. 14 20 20 Ceramic* 20 24 24 24 Vitreous Silica* 20 14 Silfa Silica* 20 24 High Temp. 20 Glass* 24 20 20 24 24 Glass 26 28 30 36 30 Teflon® 36 Glass

Contextual Info: CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S PRELIMINARY 16-Mbit 2048 K x 8/1024 K × 16/512 K × 32 nvSRAM Features • 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L),

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

80703

Abstract: 80502
Contextual Info: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are

J113A

Abstract: 610J KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A
Contextual Info: — 196 — ft -k B & KV1580A-1 Mit Tan p mW 1Ü0 KV1580NT Mit Tun 100 KV1580TL00 Tun KV1580TK00 Tun KV1581 100 veo ICO Æ fc Vrm Yr (V) (V) 30 30 30 30 KV1581A-2 Mit Tun 100 30 KV15S1A-3 Mit Tun 100 30 KV1582M Mit Tun 100 30 KV1583A Mit Tun 100 30 KV1583BM

vk 45

Abstract: 20EK1 20VK1 20VK6 20VK7 30VK6C K 2149
Contextual Info: K Series General Purpose RFI Power Line Filters Best Buy for High Impedance Load 20, 30, 40A Models 20VK7 UL Recognized CSA Certified VDE Approved 20VK6 K Series The K series RFI power line filters are general purpose common-mode and differential-mode filters. They are

ADCM371

Abstract: ad5290 7408 pin configuration AD5290YRMZ1001 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 256-position 10 kΩ, 50 kΩ, 100 kΩ +4.5 V to +30 V single-supply operation ±4.5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface Low-temperature coefficient 35ppm/oC typical THD 0.006% typical

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

STTH30R04G

Abstract: STTH30R04 STTH30R04D STTH30R04G-TR STTH30R04PI STTH30R04W DOP31 1545
Contextual Info: STTH30R04 Ultrafast recovery diode Main product characteristics IF AV A 30 A VRRM 400 V Tj 175° C VF (typ) 0.97 V trr 24 ns K A A K TO-220AC STTH30R04D Features and benefits K • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■

PLATINUM RESISTOR

Abstract: PT 100 sensor installation PT-100 RTD 3 wire sensor rosemount pt 100 temperature sensor Pt100 Platinum Sensing Resistors PT-100 temperature sensor RTD PT-100 PT-103 PT-111 PT-100 RTD 3 wire
Contextual Info: 1-28 PT-100 Platinum RTDs PT-100 Platinum RTDs • Follows Lake Shore extended standard curve from 30 K to 70 K • High reproducibility • Low magnetic field dependence above 40 K • Low susceptibility to ionizing radiation • Conforms to DIN 43760 and IEC 751 Standards