K 29 AP Search Results

Contextual Info: FLASH MEMORY 4 M 512 K x 8/256 K x 16 BIT M B M 29 F 400T C-55-70-90/M B M 29 F 400B C-55/-70-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs

transformer 9-0-9

Abstract: TTC 103 TL1115 TL-1115 TTC 103 circuit PM34-F 600CT600CT PM34M tl1104 PM32-F
Contextual Info: TELECOM M UNICATIONS TRANSFORM ERSFCC PART 68 k File No's. 138028 142035 MICROTRAN File No. LR81383 International, coupling, hybrid, voice, V.32 & V.34 data applications. MINIATURE ENCAPSULATED TELECOMMUNICATIONS TRANSFORMERS ’ .8 7 0 .3 1 j - ¡• H MET-29

Contextual Info: - N k A J C BiihiiB i v n a electronic June 1992 ASIC HI-REL DATA SHEET MCM COMPOSITE ARRAYS FEATURES . SUPER CMOS TECHNOLOGY -1 urn DRAWN - 2 METAL LAYERS . SILICON GATE 0.8 nm EFFECTIVE CHANNEL LENGTH 150 MHz TYPICAL TOGGLE FREQUENCY RAM 64 K bit, 29 ns CYCLE TIME

D290

Abstract: nut M25
Contextual Info: Extract from the online catalog HC-K-KV-M25 11-17 Order No.: 1690639 The illustration shows version HC-K-KV-M20 Plastic screw connection up to 5 bar, thread length: 8 mm, cable diameter: 11 - 17 mm, WAF 29, screw connection: M25

Contextual Info: I 10 C K T . NO. I S ID E C H A M F E R IN G TO IN D IC A T E C K T .N O . I (EVEN CKT.) W if. lik H O U SIN G 0 . 75 ' 33 32 3I 30 29 28 27 26 25 24 23 22 0 . 75 ' T E R M IN A L 29 28 27 26 25 24 23 2? 2I 20 I9 I8 I7 I6 I5 I4 I3 9 8 7 6 3 1.05 30.05 29.05

BAP64-04W

Abstract: MLD520
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Product specification Supersedes data of 2000 Jun 06 2001 Jan 29 Philips Semiconductors Product specification Silicon PIN diode BAP64-04W FEATURES PINNING • High voltage, current controlled

Contextual Info: 9 I « 16 I « I * 12 I 11 - 13A.21i0.75 -L ddu Uk z ! 15.0 K 29 25 L — _X nrnmmmriilTTTTTTTIT T I I 10.0 _L 7 uK^QOoOQDDDJOoDEDOEIi RECOMMENDED PCB LAYOUT AND KEEP-OUT ZONE

GR-468-CORE

Abstract: OAT1233S-ONU-V4-B M1104
Contextual Info: Ether-PON ONT Transceiver Specifications 1/9 Preliminary Document NO: QPS-0202-019 Rev. DRAFT0.6 Ether-PON ONT Transceiver Specifications Document Number QPS-0202-019 DATE: May. 29, 2002 Author T.Tanaka Project Manager K. YUSA Part Number : OAT1233S-ONU-V4-B

Contextual Info: •nt- * K 1 Ö M IFÜ KlüS lÄTO IM in te i 89C124FX DATA/FAX MODEM CHIP SET 9600 bps Send and Receive FAX CHMOS fo r Low Operating Power V.29 and V.27ter Compatible Low Standby Power Supports Communicating Applications Specification CAS On-Chip Hybrid

DIMENSIONS soic 16

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.

29C91

Contextual Info: MATRA 4bE M H S Sabô4Sb D 0000447 1 H3 MMHS T - K - ic r ADVANCE INFORMATION MAY 1988 DATA SHEET 29 G 91 "S" LOOP CONTROLLER • • • • • • • • • • ISDN “S” UNE CONTROLLER LAYER 1 COMPATIBLE WITH CCITT I.430 OPTIMIZED FORTE APPLICATIONS

2SK3129

Abstract: K312 SC-65
Contextual Info: TO SH IBA 2SK3129 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 29 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 5.5 mH (Typ.)

6-17GHz

Contextual Info: Advance Product Information December 15, 2004 K-Band Packaged Power Amplifier TGA4502-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 20 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V Id = 750mA ~850mA @ P1dB

Contextual Info: X Ko nt ak t ano r d nu ng Con t ac t ar rangement 31 27 29 23 25 19 21 15 17 11 13 64 E i n l o t - K o n t a k t e 64 s o l d e r - c o n t a c t s Z 2: 1 7 la = E i n l o t - K o n t a k t = solder-contact 9 _a □ = Kontaktpositon nicht belegt = p o s i t i o n without contact

Contextual Info: X Ko nt ak t ano r d nu ng Con t ac t ar rangement 31 27 29 23 25 19 21 15 17 11 13 64 E i n l o t - K o n t a k t e 64 s o l d e r - c o n t a c t s Z 2: 1 7 la = E i n l o t - K o n t a k t = solder-contact 9 _a □ = Kontaktpositon nicht belegt = p o s i t i o n without contact

probe thermometer

Abstract: TP-5300 TPK 03 TPK-03
Contextual Info: Enhance the utility of the Humidity/Temperature and Temperature meters with a selection of K-type temperature probes. Select the probe that best fits the application. TPK-05 TP-1A TP-2A TPK-04 TPK-03 TP-29 Temperature Probes TPK-05 Surface Probe, Rt-Angle -58˚~752˚F -50˚~400˚C

2N6740

Abstract: 33T4
Contextual Info: 2N6740 2N6740 NPN PLASTIC POWER TRANSISTOR High Voltage and Power Supplies Switching Applications E DIM A B C E F G H J / \ ai K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1.40 3 .7 5 3,88 2*29 2.79 2,54 3,43 0,56 12.70 14,73 6.35 2.03 2,92 31,24 7 OEG 14.42

TGA4525-SM

Contextual Info: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm

Contextual Info: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm

Contextual Info: < 3. 55 > r*»J fú , í 1. □ □ P- 3Q 30 29 28 27 26 25 24 23 ge 21 20 :k t OO 31 00 30. oo 29. oo 28. 00 P7. 2 4 . oo 26. 2 3 . oo 2 5 . 24. 22. e i oo 23. 20. oo 22. 19. oo 21. 18. 20. 1 7. OO 1 9. 16, oo LO D IM . A 20 20 20 20 20 20 20 20 20 20 20

Contextual Info: Ko nt ak t ano r d nu ng Con t ac t arrangement 96 S i g n a l Ko n t a k t e 96 s i g n a l c o n t a c t s 5 9 7 13 11 17 15 21 19 25 23 29 27 31 Z H = K o n ta k tp o s itio n belegt = p o s i t i o n with contact 2: 1 10.5 ±0,1 □ = K o n t a k t p o s i t i on ni cht b e l e g t

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. ± 20% Inductance 100 kHz/ 10 mA L 220 nH Rated inductance 100 kHz/ 10 mA/ 29 A LR 174 nH typ. Rated current ∆T = 40 K IR 29.0 A max.