K 2837 Search Results

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Functional Description Features • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Abstract: CY7C1325G-133AXC
Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow through Sync SRAM 4-Mbit (256 K × 18) Flow through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow through Sync SRAM 4-Mbit (256 K × 18) Flow through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Abstract: CY7C1325G-133AXC
Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow through Sync SRAM 4-Mbit (256 K × 18) Flow through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow through Sync SRAM 4-Mbit (256 K × 18) Flow through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

IS2838

Abstract: D1632 1S2838-A D16321 1S2837 1S2838 2838 ir k 2837
Contextual Info: Switching Diodes 1S2837,2838 Silicon Epitaxial Double Diode Common Cathode High Speed Switching tt*/F E A T U R E S « H I/ P A C K A G E D IM E N S IO N S (Unit : mm) o ow r u >> k ic æ ¿ l t m t -i -, 2.8±0.2 K Y 7 > i? X 9 l ( Ì 0 1!5 ? ''i o C = l. 1 pF T Y P .

ta 8268 ah

Contextual Info: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

diode 5082-2800

Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
Contextual Info: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description

Contextual Info: Ultra-miniature SPECIFICATIONS • MIL-PRF-27:. All units manufactured to MIL-PRF-27, G rade 5, C la ss S • FREQUENCY RESPONSE:. ±3db, 400 Hz-250 K Hz at 1.0 Milliwatt. • MAXIMUM DISTORTION:.

THYRISTOR 1724

Abstract: 4948 D1029N D2209N D2659N D4401N D660N D748N 548 thyristor
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

4948

Abstract: D1029N D2209N D2659N D4401N D660N D748N 1178
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

4948

Abstract: D1029N D2209N D2659N D4401N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 1358 1767 1836 2196 2987 4818 5228

M39014 5-2291

Abstract: MIL-C-39014 CKR11 CKR12 2067 CKR11BX470K k 2674 k 2837 MIL-C-11015 transistor k 2843 CKR12BX473M
Contextual Info: MIL-C-39014/Axial Leads HOW TO ORDER Military Type Designation: Styles CKR11, CKR12, CKR14, CKR15, CKR16 Dash Number Option: MIL-C-39014/05 Add Appropriate Dash Number Part Number Example CKR11 BX 103 K S Style Voltage-Temperature Limits Capacitance Code

D2209N

Abstract: 4948 D1029N D2659N D4401N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 1358 1767 1836 2196 2987 4818 5228