K 2645 SCHEMATIC Search Results

K 2645 schematic circuit

Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

A114

Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

k 2645 MOSFET

Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

capacitor 1825

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

K 2645 schematic

Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

2508051107Y0

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 EKMG630ELL331MJ20S
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

k 2645 MOSFET

Abstract: K 2645 schematic circuit
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

HA2650

Abstract: K 2645 schematic ma702 MC1554 CD4046 LM 1436 HA-2000 HA-2000A HA-2050A HA-2060
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications - 5 5 ° C to + 1 2 5 ° C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S

K 2645 schematic circuit

Abstract: K 2645 schematic a772 ma702 uA715 CD4016 MC1554 k 2645 HA-2820 HA-2005A
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Commercial/Industrial Applications ÜOC to + 7 5 ° C PARAM ETER * HA-911 F.E.T. P R E A M P HA-2005 HA-2ÖÖ5A H A-2055 HA-2055A HA-2065 S/H HA-2425 PRAM HA-2065A HA-2405 HA-2505 HA-2515 HA-2525 HA-2535

K 2645 schematic circuit

Abstract: transistor d 2645 K 2645 transistor TRANSISTOR K 2645 transistor
Contextual Info: 33 HA-2640, HA-2645 November 1996 4MHz, High Supply Voltage Operational Amplifiers Features Description • Output Voltage S w in g . ±35V H A -2640 and H A -2 64 5 are m on olithic op era tiona l am plifiers w h ich are d e sig ned to d e live r un p re ce d e n te d d yn am ic

transistor d 2645

Abstract: k 2645 K 2645 schematic K 2645 schematic circuit K 2645 transistor HA2-2640-2 HA2-2645-5 HA-2640 HA-2645 HA7-2640-2
Contextual Info: HA-2640, HA-2645 Semiconductor September 1998 4MHz, High Supply Voltage Operational Amplifiers HA-2640 and HA-2645 are monolithic operational amplifiers which are designed to deliver unprecedented dynamic specifications for a high voltage internally compensated

ma702

Abstract: MC1554 HA-911 HA-2005A HA-2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2425
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Commercial/Industrial Applications ÜOC to +75°C PA RA M ETER * HA-911 F .E .T . PREAM P HA-2005 HA-2ÖÖ5A HA-2055 HA-2055A HA-2065 S/H HA-2425 PRAM HA-2065A HA-2405 HA-2505 HA-2515 HA-2525 HA-2535 UNITS

K 2645 schematic circuit

Abstract: K 2645 schematic k 2645 HA7-2645-5
Contextual Info: fg H a rris S E M I C O N D U C T O R HA-2640, HA-2645 " W • m MM m mm w a w High Voltage Operational Amplifiers Features Description HA-2640 and HA-2645 are monolithic operational amplifiers which are designed to deliver unprecedented dynamic spec­ ifications for a high voltage internally compensated device.

K 2645 transistor

Abstract: k 2645 transistor d 2645 K 2645 schematic circuit TRANSISTOR K 2645 TRANSISTOR K 2645 transistor HA7-2640 TIONA RL 68 HA7-2645 K 2645 schematic
Contextual Info: HA-2640, HA-2645 Semiconductor September 1998 4MHz, High Supply Voltage Operational Amplifiers H A -2640 and H A -2 64 5 are m on olithic op era tiona l am p lifie rs w h ich are d e sig ned to d e live r u n pre cede nted d yn am ic sp e cifica tio n s for a high volta ge in te rn a lly co m p en sated

1488 1489 standard

Abstract: MC1554 HA2111 LM1488 232C AM715 HA-2111 HA-2211 HA-2825 HI-1085
Contextual Info: SELECTION GUIDE Interface Circuits COMPARATORS PA RAM ETER+ -55°C to +125°C HA-2111 Offset Voltage Bias Current Offset Current Response Time TYP Output Current (+25°C) -25°C to +85°C H A -2211 0°C to +75°C HA-2311 UNITS 4 4 150 20 200 50 150 20 10

1488 1489 standard

Abstract: MC1533 MC1554 ma702 AD7513 MPC16S Exar cross HA2-2055 CMP-01 Solitron Devices
Contextual Info: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525

HA911

Abstract: lh002 HA-911 MA702 CD4046 MC1554 HA-2500 HA-2510 HA-2512 HA-2522
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:

HA-2635

Abstract: CD4046 ma702 MC1554 ua740 106 25k 112 HA-2420 HA-2500 HA-2502 HA-2510
Contextual Info: BURN-IN CIRCUITS HA-2420 HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522 TO-99 TO-86 N.C. N.C. I -1 N.C. lOOOpf N.C. -15 N.C. N.C. +15 N.C. N OT E : T a - +1 2 5 ° C N OT E S : T A = +1 2 5 ° C R l = 1M egohm C ! = 0 . 0 1 JLIF, 5 0 V HA-2600, HA-2602, HA-2620, HA-2622

1488 1489 standard

Abstract: Li-116 HA-2700 teledyne philbrick 1430 ca3130 replacement ma702 MC1554 HARRIS / HA1 LM 1436 MPC16S
Contextual Info: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525

MA776

Abstract: MC1554 HA-29Q0 Exar cross peak lm 1458 HA-2500 HA-2502 HA-2510 rca ca3130 HA-2520
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A TO-99 H < a "1 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V

HA-2055A

Abstract: MC1554 Exar cross HA-2005A HA-2055 HA-2065 HA-2065A HA-2405 HA-2425 HA-2505
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Commercial/Industrial Applications ÜOC to +75°C PARAMETER * HA-911 S/H HA-2425 HA-2505 F.E.T. PREAMP PRAM HA-2005 HA-2ÖÖ5A HA-2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2515 HA-2525 HA-2535 UNITS INPUT CHARACTERISTICS