K 2608 4 E Search Results

Binary to hexadecimal

Abstract: Signetics 2608 rom 1024 1024x8 TEN 8 Series 2608 rom 1024x8 1024X8
Contextual Info: sjgnotics 1024X8 STATIC READ ONLY MEMORY 12608 2608 1 N CHANNEL SILICON GATE MOS 2600 SERIES PIN C O N F IG U R A T IO N D ESCRIPTIO N The 2608 is a fu lly decoded, static, mask programmable read-only memory. It has a capacity of 8192 bits organized 1024 X 8. The 2608 is fabricated with low threshold

Contextual Info: 2608 • 2608- 1-1 DESCRIPTION PIN CONFIGURATION The 2608 is a fully decoded, static, mask programmable read-only memory. It has a capacity of 8192 bits organized 1024 X 8. The 2608 is fabricated with low threshold N-Channel silicon gate MOS technology which allows extreme ease of use with low voltage logic families such

k 2608

Abstract: M48Z35 M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

AM9216

Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Contextual Info: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E

BD663471

Abstract: R40H R68H TX06D57VM0AAA-1A hitachi COLOR BAND MARKING 3284PS2605-TX06D57VM0AAA HD66786U TX06D57VM0AAA IDX110 240X96
Contextual Info: Hitachi Displays, Ltd. Date : June 8, 2006 For Messrs. Hitachi Europe Ltd. CUSTOMER'S ACCEPTANCE SPECIFICATIONS TX06D57VM0AAA CONTENTS No. Item Sheet No. Page 1 COVER 3284PS2601-TX06D57VM0AAA-1A 1-1/1 2 RECORD OF REVISIONS 3284PS2602-TX06D57VM0AAA-1A 2-1/1

Contextual Info: Bulletin 12088/A International SRectifier sd 2oooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 2100A • Wide current range ■ High voltage ratings up to 1000V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version

Contextual Info: Bulletin 12088/A bitemational S Rectifier sd 2oooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 2100A W id e c u rre n t ra n g e • H ig h v o lta g e ra tin g s u p to 1 0 0 0 V ■ H ig h s u rg e c u rre n t c a p a b ilitie s ■

Contextual Info: Bulletin 12088 rev. A 08/94 International i ö r Rectifier SD2000C.L s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version Features 2100A • W id e c u rre n t ra n g e ■ H igh v o lta g e ra tin g s up to 1 0 0 0 V ■ H igh s u rg e c u rre n t c a p a b ilitie s

pipbug

Abstract: ram 2112 signetics prom 32x8 CN0035 2N2222 transistor W9-W10 2650DS2000 2650KT9500 N7402 512X8
Contextual Info: D ESCRIP TIO N FEATURES O PTIO NS The S ig netics A dap table B oard C om puter, AB C 1500, is a m o d u la r m ic ro c o m p u te r c o n ta in in g a CPU, m em ory, I/O ports and su p p o rt c irc u itry . It is designed to cove r a broad range of a p p lic a tio n s fro m softw a re

Contextual Info: 28 4 Kontaktanordnung Ccntact arrangement 31 27 23 29 25 19 21 15 17 1 1 13 9 IT T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T I El ?° Lochbild 32 CO o •* i_ n alle all & d r i l l ings □ ) Löcher 01 ± 0,1 I 2:1 = E inlot-Kontakt 1 0 , 5 ±0 . 1

LP1060-12-GG-170

Abstract: ul 7-12 E249377
Contextual Info: FORM 0 3 2 4 0 5 - 1 PF 2 1 /4 ” LTR REVISIO N D A TE APPD A 081508—BJ01: UPDATED DRAWING & ELECTRICAL SPECIFICATIONS 0 8 -2 2 -0 8 GP 7 .2 4 4 [1 8 4 .0 ] P L C S . .200 [5 .1 ] (6 / / O Ä / ¿ i2 J V HIGH PERFECTION TECH. ! !!""%!( E-i1 CLASS 2 POWER SUPPLY www.highperfection.com.tw

FUSE BLS

Abstract: 7027 tube bls-17
Contextual Info: J :. I Lead and Cartridge Fuses Special Midget 13/s Long Fast-Acting Type Fuse BLS Series ELECTRICAL CHARACTERISTICS: % of Ampere Rating Ampere Rating 100% 7-0-10 135% 7,o -1 0 2 0 0% ORDERING INFORMATION: Opening Time 4 hours, Minimum 1 hour, Maximum 5 seconds, Maximum

K4096

Abstract: 1404a ITT 6570 MM2102 MM2112 intel 2101 MK4102 MK4007 MK1007 KS 2102
Contextual Info: S ig n e tic s M em o rie s-M O S RAMs IN T E L 2101 2111 2112 2 1 0 2 /2 1 0 2 A 1103 2107B 2104 2115 2125 2 11 4 2 30 8 2316E 2 70 4 2708 1402A 1403A 1404A 1405A M O STEK M K4007 M K4102 M K4096 M K4027 M K30000 M K 34000 M K3708 M K1007 M OTOROLA 2 102/A

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E

ixys MCC 26-12

Abstract: TC 2608 26mcd ixys MCC 90 io8 IXYS MCC 26-14 io8B ixys mcc 26 THYRISTOR MODULE IXYS MCD 25 mcc 95 08101b ixys MCC 90
Contextual Info: MCC 26 MCD 26 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x50 A ITAVM = 2x32 A VRRM = 800-1600 V VRSM VRRM TO-240 AA VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 6 3 2 1 Version MCC MCC MCC MCC 26-08 26-12 26-14 26-16 1B io1 B / io1 B /

tc 2608

Abstract: ixys MCC 90 io8
Contextual Info: MCC 26 MCD 26 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x50 A ITAVM = 2x32 A VRRM = 800-1600 V VRSM VRRM TO-240 AA VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 6 3 2 1 Version MCC MCC MCC MCC 26-08 26-12 26-14 26-16 1B io1 B / io1 B /

tc 2608

Abstract: k 2608 wph26 wpt 26 UL758 CR diode transient M/wpt 26
Contextual Info: WESTCODE SEMICONDUCTORS ITRMS = 2 x 50 A ITAVM = 2 x 32 A VRRM = 800 - 1600 V Thyristor Modules Thyristor/Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 TO-240 AA Type 3 6 2 1 WPT 26-08 WPT 26-12 WPT 26-14 WPT 26-16 Symbol Test Conditions

Contextual Info: IDT54/74FCT821A/B/C IDT54/74FCT823A/B/C IDT54/74FCT824A/B/C IDT54/74FCT825A/B/C HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Equivalent to AMD's Am29B21 -25 bipolar registers in pinout/function, speed and output drive over full tem­

TK1204

Abstract: TK 1204 M CB263 CB-263 TK 1802 TK1804 k 2608 TK 1804 CE 315 TK1206
Contextual Info: S G S —THO M SON 71C D § 0 dC m c14 M k 7 ^ 2 3 7 | . T~ ¿ r~ < <? THOMSON SEMICONDUCTORS_ thyristors > 1 0 0 Arms Typ e* •o V R RM 'TSM * 10 m i V DRM A (V ) 120 Arms /Tease = 80°C TK TK TK TK TK TK TK TK TK 1201 1202 1204 1206 1208

sw 2608

Abstract: IC tc 2608 C2608 823B
Contextual Info: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS IDT54/74FCT821A/B/C IDT54/74FCT823A/B/C IDT54/74FCT824A/B/C IDT54/74FCT825A/B/C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology.

2000C

Abstract: SD2000C
Contextual Info: Bulletin I2088 rev. B 04/00 SD2000C.L SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 2100A Wide current range High voltage ratings up to 1000V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AB B-PUK Typical Applications

Contextual Info: INTEGRATED 4825771 IN TEGR ATED DEVICE Ì 1 D e J 4Ö2S771 97D DEV IC E GDGibOa 1 |~~ 0 2608 FAST CMOS REGISTERED EEPROM WITH SPC 256K 32K x 8-BIT ADVANCE INFORMATION IDT78C5256A FEATURES: DESCRIPTION: • 5 volt only operation • Fast access times — Military: 70ns (max.)