K 2607 Search Results

AN1064

Abstract: an4359 circuit diagram for automatic voltage regulator G PLC connection CY14B101KA
Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP II) ❐ 48-Pin shrink small-outline package (SSOP)

AN4359

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

CY14B101LA-SZ25XI

Abstract: CY14B101LA-SZ45XI CY14B101LA-SP25XIT
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

27934

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14B101P 1-Mbit 128 K x 8 Serial SPI nvSRAM with Real Time Clock 1-Mbit (128 K × 8) Serial SPI nvSRAM with Real Time Clock Features • ■ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14B101P 1-Mbit 128 K x 8 Serial SPI nvSRAM with Real Time Clock 1-Mbit (128 K × 8) Serial SPI nvSRAM with Real Time Clock Features • ■ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1 Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K x 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using