K 246 TRANSISTOR Search Results

BF246

Abstract: tic 246 h BF 246 tic 246 in 5 246 b BF 246 A
Contextual Info: I 2SC D • 023SbOS QQQM4b4 T « S I E G N-Channel Junction Field-Effect Transistors BF 246 A 25C 0 4 4 6 4 S IE M E N S D A K T IE N G E S E L L S C H A F SE2Î2 5 B F246C BF 2 4 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar

service-mitteilungen

Abstract: stern elite BF-215 radio fernsehen Radio Fernsehen Elektronik bf 194 zk246 sowjetische transistoren PJ-130 BF194
Contextual Info: SERVICE-MITTEILUNGEN SEITE iffläU IR a d i o -television | > //4 1-6 V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N AUSGABE: J U L I Das Stereo-Tonbandgerät ZK 246 ist ein Spitzenerzeugnis der polnischen Konsumgüter-Elektronik, das in einer relativ ge­

PA 1515 transistor

Abstract: 12SW 1519b
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

KRC246

Abstract: KRC245
Contextual Info: SEMICONDUCTOR KRC241~KRC246 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C ・With Built-in Bias Resistors. A ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.

2SC1811

Abstract: 2SA896 138D 2SA1015
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

TIP 34 pnp

Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
Contextual Info: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B

KTC9012

Abstract: D6491 KTC9012 transistor KTC9013 transistor KTC9013
Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9013. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage

KTC9012

Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

KTC9013 transistor

Abstract: KTC9013 transistor KTC9012 KTC9012
Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9012. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

TIP34

Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
Contextual Info: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C

TIP 29 transistor

Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
Contextual Info: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature

2N6256

Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor npn 100w amplifier

Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:

transistor tip 109

Abstract: j1n transistor bd 109 transistor TIP30 transistor riP30 bd 125 equivalent TEXAS INSTRUMENTS TIP29 Texas Instruments TIP30C Transistor tip29 TIP308
Contextual Info: TYPES TIP30. TIP30A, TIP30B. TIP30C P-N P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH T IP 29, T IP 2 9 A , T IP 29B , TIP29C

Contextual Info: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code

2SB552

Abstract: 2SB55 D552 2SB552BN ASO11 2SB552-BN 2SD552 AC73
Contextual Info: :SB 552 2/'J D > P N P = « Ê lR y .+ t îB h ^ > ^ 5 > SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE o xnxtgmm INDUSTRIAL APPLICATIONS O J z V .tlX 't y T ' s r m O BC-DCnyX-^fl Unit in mm o n ^ » i' o Power Amplifier, <¿2 50 MAX. Power Switching Application,

Schaffner* it 332

Abstract: Schaffner it 245 Schaffner it 153 IT 313 IT 243 IT 153 SCHAFFNER IT 248 IT 154 Schaffner* it 153 Schaffner* it 314
Contextual Info: Pulse Transformers Pulse Transformers Impulstransformatoren Transformateurs d’impulsion www.schaffner.com SCHAFFNER Pulse transformers CONTENTS INHALT TABLE DES MATIERES General information Allgemeine Informationen Généralités Introduction.2

BLV31

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV31 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: 45 -^ -C BLV31 is Designed for use in VHF amplifiers r~v B

transistor BD 246

Abstract: TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245 BD240 BD240A BD240B
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm