K 2333 Search Results

SMD DIODE gp 817

Abstract: BA592 PHILIPS DIODE smd marking A1 BP317 1/GP-045
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BA592 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 07 Philips Semiconductors Preliminary specification Band-switching diode BA592 FEATURES , PINNING SOD323

Philips diode

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated

transistor Bc 949

Abstract: BV EI 481 1120 substitute for transistor NEC D 587 0FF50 uPD784908 uPD784935 uPD784936 uPD784937 uPD784938 uPD78F4938
Contextual Info: Preliminary User’s Manual µ PD784938 Subseries 16-Bit Single-Chip Microcontrollers Hardware µPD784935 µPD784936 µPD784937 µPD784938 µPD78F4938 Document No. U13987EJ1V0UM00 1st edition Date Published September 1999 N CP(K) Printed in Japan 1999

BAP64-04W

Abstract: MLD520
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Product specification Supersedes data of 2000 Jun 06 2001 Jan 29 Philips Semiconductors Product specification Silicon PIN diode BAP64-04W FEATURES PINNING • High voltage, current controlled

PDTA124EEF

Abstract: SC-89 BP317 PDTA124E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP65-03 Silicon PIN diode Product specification Supersedes data of 2001 May 07 2001 May 11 Philips Semiconductors Product specification Silicon PIN diode BAP65-03 FEATURES PINNING • High voltage, current controlled

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP64-06 Silicon PIN diode Product specification Supersedes data of 2000 Mar 22 2001 Feb 27 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 FEATURES PINNING • High voltage, current controlled

BP317

Abstract: PMBT5401 PMBT5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).

BAP50-04

Abstract: BP317 s21 diode smd diode marking CA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Preliminary specification 1999 May 10 Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-04 PINNING FEATURES • Two elements in series configuration in a small-sized

3225 K50

Abstract: D4401N D660N D748N D1029N D2209N D2659N
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

VC 5022-2

Abstract: c102m tt 2222 CZ20A 2222 733 23474 2222 04 A 821 a331j cz-20 philips TT132
Contextual Info: Philips Components Cross reference selection guide Leaded ceramic multilayer capacitors Table 1 Mono-kap conformal radials NP0 C0G , 5% and 10% tolerance, 50 V DISTRIBUTION PART NUMBER 15-DIGIT CODE(1) 12NC CODE PITCH CN 15 C 100 J K 100 J 15 C0G F VB

sensor alcohol

Abstract: DL-100-7-KER at-10V
Contextual Info: DL-100-7-KER pin Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity typ. 75 pF 2.1± 0.15 typ. 0,4 A/W typ. 0,62 A/W 10.16 0.45 15.24 typ. 12 kΩ ANODE 1 CATHODE 2

vogt B9 transformer

Abstract: vogt a7 VOGT A8 24c04 hex code Goerz PCM64 VOGT 503 05 001 00 vogt 543 vogt transformer s3 Z2H SMD
Contextual Info: Cologne Chip HFC - 4S / HFC - 8S ISDN HDLC FIFO controller with 4 / 8 integrated S/T interfaces Data Sheet March 2003 rev. A HFC-4S HFC-8S Cologne Chip Cologne Chip AG Eintrachtstrasse 113 D - 50668 K¨oln Germany Tel.: +49 (0) 221 / 91 24-0 Fax: +49 (0) 221 / 91 24-100

Contextual Info: "fH~AN_G_Li P ROJECTION I - - ALTERATION I S S U E I DESCRI PTION IDATE M0difi cati0n I Jun .2 M A R K I N G I F O R M I N G 2 0 0 2 ITEM CODE IRAT_:D._I CAP DIMENSIONS VOLTAGE F * 1 L T 1 H S d ¥ S T Y L E¥T Y P E Company name changed 1 cl . 1 1

Contextual Info: POSITRONIC M O USTRIES B E LE V E S TH E DATA ON T H S DRNMNO TO B E R ELIA B LE. 9 N C E TH E TECHM CAL M FO M M IO N IS GIVEN FR E E O F CHARG E, TH E U SER EM PLOYS SUCH INFORMATION A T M S OWN DBCRETION AND R B K . PO STRO N C IN D U S T R Y ASSUM ES NO

TDA 7277

Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Contextual Info: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N

Contextual Info: THIRD ANGLE PROJECTION I ITEM CODE ECQE2103 0 T 1 1 2123 0 T 1 I 2153 0 T 1 1 2183 0 T 1 ' f 22230 T 1 1 2273 0 T 1 ' f 23330 T 1 1 23930T 1 t 2473 0 T -1 ALTERATION I S S U E / DESCRIPTION Modifica1i 0n 2 0 0 Company name changed 1 / : . . /Company name changed

Contextual Info: THJRD A N G l E PROJECTJON I ALTERATJON J SS U E ITEM CODE RATED VOLTAGE ECQE2103088 250VDC / 1 2123088 / 1 2153088 / 1 / 1 2183088 " / 1 " 2223088 " 2273088 " / 1 / 1 2333088 " 2393088 " " 2473088 " 2563088 " " 2683088 " " 2823088 " / 1 2104088 " " 2124088

Contextual Info: i HI R DA N G L EP I l 2 _ J _ E CT~I ITEM CODE ECQE21030B3 1 1 21230B3 1 1 21530B3 1 1 21830B3 1 1 22230B3 1 1 22730B3 1 1 23330B3 1 1 23930B3 1 1 24730B3 1 1 25630B3 1 1 26830B3 1 1 28230 B3 1 1 21040B3 1 21240B3 1 1 21540B3 1 1 21840B3 1 1 22240B3 1 1 22740B3

Contextual Info: ~_A_N_G_L_E_ P R _ O _ J _ E C T~~N I ALTERATION I S S U E ITEM CODE ECQE21030BZ 1 / 21230BZ 21530BZ 1 / 1 1 21830BZ / 1 22230BZ 1 / 22730BZ / 1 23330BZ 1 1 23930 BZ / 1 24730 BZ 1 25630BZ / 1 26830BZ 1 28230BZ / 1 21040BZ 1 21240BZ 1 / 21540BZ 21840BZ 1 /

Contextual Info: THIRD ANGLE PROJECTION I ALTERATION I S S U E ITEM CODE ECQE210308 11212308 1 / 215308 11218308 1 / 222308 1 / 227308 1 / 233308 1 / 239308 1 / 247308 1 / 256308 1 / 268308 1 / 282308 1 / 210408 1 1 212408 1 / 215408 1 / 218408 1 / 222408 1 / 227408 1 / 233408

FL256

Contextual Info: THIRD ANGLE PROJECTION ALTERATION I S S U E ITEM CODE ECQE21030TZ 1 1 21230TZ 21530TZ 1 1 f I 21830TZ RATED VOLTAGE 250VDC fl22230TZ f I 1 1 1 1 1 1 22730TZ 23330TZ 23930TZ 24730 TZ 1 1 1 1 1 1 f I f I H f I 1 1 fl25630TZ fl26830TZ 1 1 1 1 28230 TZ f I 21040TZ

Contextual Info: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver