K 2232 Search Results

lc7218

Abstract: RDSF SK 57 100 SA 2232M DIP24S LA2230 LA2232 LA2232M LC7070 MFP24S
Contextual Info: ; È Î 3 - KNo. N4416A N o . 4416A D2096 X Ns4416 £ 2 b i ' Z X < £ £ < •'. L A 2232, 2232M - r d s ^ I f LA2232, 2232M f i , R D S Îi# fflÎlfflIC T * 5 7 k H z ^ > K - /* * 7 ^ )] /# ilfeARI-SK, D K { | mm, Ò. x ^ - $ Ü H T I E f f lL S I LC7070&#39;>>;

STR - Z 2062

Abstract: MS27490-22D 030-2155-000 MS27499 S27490-20 225-1013-000 MS27490-22 MS27513 MS27491-22M din en 3767
Contextual Info: M IL-C-38999 Series I, II, III Connectors SERIES I K JL/K J/K JA SERIES II GROUNDING FIN GERS Standard on Series I connector C LO SED EN TR Y S O C K ET CONTACT DESIGN SERIES III S H E LL HARDW ARE Is alum inum alloy HIGH STREN GTH M ULTIPLE-TINE M ETAL RETAINING CLIP

MS311b

Abstract: KPSE Assembly Instructions
Contextual Info: K PT /K PSE M IL-C-26482, Series 1 C onnectors K P T connectors are a series of general-purpose, In addition to the two basic se rie s, connectors for environm ent-resistant, miniature circular connec­ special applications are also available. They include

SLE 4404

Abstract: MS3126 INSTRUCTIONS KPSE Assembly Instructions MS311b
Contextual Info: K PT /K PSE M IL-C-26482, Series 1 C onnectors K P T connectors are a serie s of general-purpose, In addition to the two basic se rie s, connectors for environm ent-resistant, miniature circular connec­ special applications are also available. They include

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

K3007

Abstract: hp 2232 tt 2232 2232-17 DDD2272 EL2020 EL2232CM EL2232CN EL2232J t924
Contextual Info: SSE D • W K 0 ^ 9 m w im L w k W tfw K t HIGHPERFGBSWIiGlMlAUJGIfflfEtifttSDClflGtllTS D0D2272 T4T H E L A EL2232/EL2232C 80 MHz, Fast Settling, Dual Current Mode Feedback Amplifier " elantec : . /" ' P V M ~ Z S > inc F e a tu r e s G en era l D e sc r ip tio n

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

CBT3857

Abstract: JESD22-A114 JESD22-A115 JESD78 PCK857 SSTL16857
Contextual Info: INTEGRATED CIRCUITS CBT3857 10-bit bus switch with 10 kΩ pull-down termination resistors Product specification Supersedes data of 1998 Dec 10 Philips Semiconductors 1999 Sep 14 Philips Semiconductors Product specification 10-bit bus switch with 10 kΩ pull-down

Contextual Info: MIL-C-26500 insert arrangements Rear face of pin insert shown socket insert opposite . Symmetrical about center line. ▲ designates Non-MS Configurations. K designates Firewall Class K inserts. H designates Hermetic inserts. Contact cavities are identified with a spiral guide line indicating cavity sequence.

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Abstract: AN1064 CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXI
Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: Environmental Connectors B M R K N L A M N MIL-DTL-38999 Series III Type Environmental Class Connectors E B J C D C P H J T D H U P R S E 5 Series III Series II Series IV 1 6 3 B 9-35 8-35 - A 5 4 2 A B B F B F C A C B C B C L K D K N C P G B J D A L 15-5

B2232

Abstract: A18-0210 98operating tm1a V2232
Contextual Info: riVMA M oLLfHbiM M O f ly / if lT o p H b iii T p n o f l T M - 1 A MOflyJlflTOPHblN TPMOfl TRIODE n p e f l- Ha3HaseH fl/ia paóOTbi b cxeMax HM3K0HacT0TH0r0 y c u n e H k m 6e3 t o k o b b q e n n y n p a B J is n o i^ e ii c e T K M b paflMOTeXHUHeCKMX y c T p o iic T B a x .

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C

223-28

Abstract: ES-88
Contextual Info: 7 1 3 II K EY IN G OPTION "1" NO N-KEYED OPTION K EY IN G O PTION "2” M S - 7 13 10- 1/ 4* ENG. NUMBER E.D.P. NUMBER ENG, NUMBER E.D.P. NUMBER MS-71310 - E.D.P. NUMBER 2 / 5* * * ENG. NUMBER HSG. CKT SIZE SIZE DIM . "A" MM DIM . "B" MM IN. DIM . "C" MM

Contextual Info: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM + 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

Contextual Info: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •

tt 6222-1

Abstract: FTTL 655 mtk 6225 cpu MT 6225 TRRAM ifr 422 H7 mtk 6228 mtk 6226 MTK 6227 TMP47C422U
Contextual Info: TO SH IB A TMP47C222/422 CM O S 4 t f '7 h h P - 7 TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F TMP47C222U, TMP47C422U TM P47C 222/422ÌÌ, T L C S -4 7 0 v V - X * iü L fc iííjÜ k \zAD=¡ > - 9 , ^ frX ROM pnp f f ^ RAM TM P47C222N n y If — tf} EJB&. LCD K 5 >f

HP 2231

Abstract: hp 2232 hp 2430 ic a 2231 hcpl2231 tt 2232 HCPL-2231 HCPL-2232 HCPL-2430 HCPL-5430
Contextual Info: -2 6 3 Dual LED-Photo Diode Buffered by 3 state TTL LED-7* h • y 'f 1 * tt * m m it ig n d K + 3 ^ t - t- TTL 2 H S & 1t m vccm If max (m A ) >k VR max (V ) 5E 2 M Pm max (m W ) VcE max (V ) IS £ • / ol P ds max max (m A) (m W ) Vcc* BV min (kV )