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    K 2129 MOSFET Search Results

    K 2129 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    K 2129 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6797

    Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching


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    2N6797 2N6798 PDF

    Contextual Info: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.00 09/2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information


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    MC9S12ZVH-Family HCS12 MC9S12ZVHRMV1 S12ZCPU PDF