K 2129 MOSFET Search Results

NTCG103JF103FT

Abstract: smb239 k 2129 MOSFET CRCW04022492F LTST-C190CKT QFN-32 USB100 SMX3202 4180V h20-h2F
Contextual Info: SMB239 Programmable Linear Battery Charger in 1.3 x 2.1 uCSPTM FEATURES & APPLICATIONS INTRODUCTION • World’s smallest linear charger • Linear charging for reduced board space • • • • o o The SMB239 is a programmable single-cell lithium-ion/lithium-polymer

Contextual Info: Ordering number: ENN7006~| P-Channel Silicon MOSFET FW138 Load Switching Applications Features Package Dimensions • 4V drive. • Low ON-resistance. unit : mm 2129 [FW138] fl R A fl r iti 1 : Sourcel 2 3 4 5 6 7 8 Id Id Id b 1 4 5.0 : Gatel : Source2 : Gate2

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: Ordering number: ENN6784~j P-Channel Silicon MOSFET FW133 Load Switching Applications Features Package Dimensions unit : mm 2129 • 4V drive. • Low ON-resistance. [FW133] H R, H H, □ t Ö ET 1 4 . 0 .2 5.0 0 .595 ^ 1.27 ML Specifications 1 2 3 4 5 6

Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

74hc273

Abstract: SMD CODE list mosfet 6pin k 2129 MOSFET TRANSISTOR SMD CODE PACKAGE SOT363 TRIAC dimmer control I2C LPC2129 ARM7TDMI-S programming SOT363 flash TEA1620P TEA1623P PBLS1503V
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 3 ISSUE 1 Semiconductors F E B R U A RY 2 0 0 4 Discretes Power management Logic Interface products Microcontrollers In this issue: 1. PCA9510, PCA9511, PCA9512, PCA9513, PCA9514 Hot swappable I2C and SMBus buffers

IGT8D20

Abstract: TRANSISTOR BIPOLAR 400V 20A IGT8E20
Contextual Info: Insulated-Gate Bipolar Transistors IGT8D20, IGT8E20 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2129 TER M IN A L DIAGRAM 20A, 400V and 500V Tds on = 0.12 O Features: • Low I/ c e is a t ) — 2.3V typ. @ 20A

PWM USING IC 555 TIMER dc motor control

Abstract: solenoid valve 24v PWM 555 DC MOTOR CONTROL solenoid pwm proportional valve driver IC for IRF540 MOSFET PWM speed control of DC motor using IRF540 micrel 2129 PWM dc speed control of DC motor using IRF540 PWM dc speed control of DC motor using 555 IRF540
Contextual Info: Features General Description The M IC5014/5015 MOSFET predrivers are members of the MIC501x family. These versatile drivers are designed to provide gate enhancement above the positive supply for an Nchannel FET used in high or low side switching applications.

flyback 150W schematic diagram

Abstract: ICL7675 flyback transformer design IRF series
Contextual Info: IC L7675/IC L7676 f f í HARRIS S E M I C O N D U C T O R Switched-Mode Power Supply Controller Set GENERAL DESCRIPTION FEATURES The ICL7675/7676 two-chip set provides the necessary control circuitry tor regulation of a single-ended, transformer coupled, flyback type switching power supply. Specifically

CA3088

Abstract: triangle wave generator using 741 Wien Bridge Oscillator with IC 741 12v dc cdi schematic diagram a3140 dip-8 CA3140S Wien Bridge Oscillator sine 50 hz ICAN-6668 CA3140AM ca3140
Contextual Info: fX 3 H U U A R R CA3140 IS S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Description The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with

PIN DIAGRAM OF IC CA3140

Abstract: CA3140 6 CA3140 S
Contextual Info: m CA3140 HARRIS S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Description MOSFET Input Stage - Very High Input Impedance Z|N -1.5Tn(Typ.) - Very Low Input Current (I) -10pA (Typ.) at ±15V - Wide Common Mode Input Voltage Range

Contextual Info: interrii HIP6006 S e p te m b e r 1997 D a ta S h e e t Buck and Synchronous-Rectifier Pulse-Width Modulator PWM Controller The HIP6006 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two

CA3140S

Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
Contextual Info: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)

Contextual Info: Semiconductor, Inc. _ 1 TC646 PWM FAN SPEED CONTROLLER WITH AUTO-SHUTDOWN FEATURES GENERAL DESCRIPTION • The TC646 is a switch mode fan speed controller for use with brushless DC motors. Temperature proportional speed control is accomplished using pulse width modulation PWM .

TFT 65K colors 128 x 160 pixels

Abstract: LGDP4216 160x128 LGDP4216 transistor R1005 lg lcd monitor circuit diagram free RAMTEX Portable C Source Library LGDP7216 oled full colour RAMTEX Library RAMTEX
Contextual Info: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Crystalfontz Model Number CFAL160128B-F-B2 Hardware Version Version A, January 2010 Data Sheet Version Version 1.0, January 2010 Product pages

TBD 234 V12

Abstract: ACM 944 motor IG 2200 19 X 000 15 R
Contextual Info: Advanced v1.2 Actel Fusion Programmable System Chips Mixed-Signal Family with Optional ARM® Support Features and Benefits Low Power Consumption • • High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process

TBD 234 V12

Abstract: op amp ua 745
Contextual Info: Advanced v1.2 Actel Fusion Programmable System Chips ® Mixed-Signal Family with Optional ARM® Support Features and Benefits Low Power Consumption • • High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process

motor IG 2200 19 00001

Abstract: ARM7 2148
Contextual Info: Advanced v1.1 Fusion Family of Mixed-Signal Flash FPGAs ® with Optional Soft ARM Support Features and Benefits Low Power Consumption • • High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process

Contextual Info: Advanced v0.1 Actel Fusion Programmable System Chips for the MicroBlade Advanced Mezzanine Card Solution Features and Benefits On-Chip Clocking Support Targeted to Advanced Mezzanine Card AdvancedMC Designs Designed in Partnership with MicroBlade 8051-Based Module Management Controller (MMC)

Contextual Info: MC9S12ZVHY/MC9S12ZVHL Families Reference Manual HCS12 Microcontrollers MC9S12ZVHYRMV1 Rev. 1.02 3/2014 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

zo 103 ma 75 607

Contextual Info: Advanced v1.6 Actel Fusion Mixed-Signal FPGAs ® with Optional ARM® Support Features and Benefits Low Power Consumption • • High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process Nonvolatile, Retains Program when Powered Off

flashpro3 schematic

Abstract: LVCMOS15
Contextual Info: 2 – Device Architecture Fusion Stack Architecture To manage the unprecedented level of integration in Fusion devices, Actel developed the Fusion technology stack Figure 2-1 . This layered model offers a flexible design environment, enabling design at very high and very low levels of abstraction. Fusion peripherals include hard analog IP

Contextual Info: Advanced v1.3 Actel Fusion Programmable System Chips ® Mixed-Signal Family with Optional ARM® Support Features and Benefits Low Power Consumption • • High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process

Contextual Info: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.00 09/2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information