K 1535 Search Results

JESD79-3E

Abstract: PC3-14900 DDR3 SDRAM PC3-14900
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

PC3-12800

Abstract: nanya 8gb DDR3 DIMM NT8GC72B4PB0NL NT8GC72C8PB0NL B.A date sheet 2012 D35BA
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 512Mx8/1024Mx4 (4GB/8GB/16GB) SDRAM B-Die

srx 2039

Abstract: BASE200 NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Abstract: JESD79-3E NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 / PC3-14900 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600/1866 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

STR - Z 2062

Abstract: MS27490-22D 030-2155-000 MS27499 S27490-20 225-1013-000 MS27490-22 MS27513 MS27491-22M din en 3767
Contextual Info: M IL-C-38999 Series I, II, III Connectors SERIES I K JL/K J/K JA SERIES II GROUNDING FIN GERS Standard on Series I connector C LO SED EN TR Y S O C K ET CONTACT DESIGN SERIES III S H E LL HARDW ARE Is alum inum alloy HIGH STREN GTH M ULTIPLE-TINE M ETAL RETAINING CLIP

Contextual Info: M39014/01-1535 aka C052T103K1X5CR CKR05BX103KR Capacitor, ceramic, 0.01 uF, +/-10% Tol, 100V, BX, Lead Spacing=0.2" T L H K G S e a ting P la ne See Note A F LL S Dimensions in Specifications ID Dimension Tolerance W H L S LL F K G 0.09 0.19 0.19 0.2 1.25

Katalog tesla tranzistor

Abstract: KD502 KD3055 KD617 KU607 KU612 Tesla katalog KD602 kd 617 kd607
Contextual Info: T E U f • - f l J P i A . f E L E K T R O N IC K É € K O N C E R N S O U C Á S T K Y R O Z N O V Kremikové vÿkonové tranzistory fill* KC31S VOO331 ft* » .* K03773 T30 32> U U * K0336 VQ0321 I I I IA If« » KOWt MÍO 32' K0338 VQ0 3SI ic c a f li

Contextual Info: K JL/K J/K JA M IL-C-38999 Series I, II, III Connectors SERIES II SERIES I SERIES III S H E L L H A RD W A RE is alum inum alloy H IGH STREN GTH MULTIPLE-TINE M E T A L R ETAINING CLIP assures positive retention with inwardly deflected tines that lock securely behind contact shoulder

Contextual Info: Filename: tfs 110r.doc Version 1.4 Vectron International 19.05.2009 Filter specification TFS 110R 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 2,9 kΩ | -6.2 pF 2,8 kΩ | -5.5 pF Characteristics

Contextual Info: Filename: tfs 110x.doc Version 1.5 VI TELEFILTER 09.08.2007 Filter specification TFS 110X 1/5 : Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 1,96 kΩ | -9,2 pF 2,22 kΩ | -8,6 pF Characteristics

Contextual Info: file: tfs111a.doc version 2.0 VI TELEFILTER Filter specification 18.10.00 TFS 111A 1/1 Measurement condition Ambient temperature: 23°C Input power level: 0 dBm Terminating impedances for input: 3,2 kΩ | -5.6pF for output: 3,1 kΩ | -6.2pF Characteristics

110R

Contextual Info: file: tfs110r.doc version 1.2 VI TELEFILTER Filter specification 30.11.00 TFS 110R 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedances for input: for output: 23°C 0 dBm 2,9 kΩ | -6.2 pF 2,8 kΩ | -5.5 pF Characteristics

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: PIC17C7XX High-Performance 8-bit CMOS EPROM Microcontrollers with 10-bit A/D Microcontroller Core Features: Memory Device PIC17C752 PIC17C756A PIC17C762 PIC17C766 Program x16 Data (x8) 8K 16 K 8K 16 K 678 902 678 902 Peripheral Features: • • • •

Contextual Info: CAPACITORS MONOLITHIC CERAMIC CAPACITORS • P a c k a g in g Dim ensions Please contact m u r a t a for details. and Minimum Quantity (order in sets only) 1. C h ip T yp e • Dimensions of paper tape (for T=1.0mm and under) 1 -1. B u lk P a c k a g in g ( P a c k a g in g co d e : P B )

Contextual Info: Adaptors 59 S 151-KOO E3 13 1 19 59 K 151-SOO E3 SMB f / BNC m SMB m BNC f 27 23.5 1 • sfr Q "I I ! .V1* Remarks: Remarks’. 1- 14 59 S 153-500 E3 20 SMB m lN m 27 SMBf/BNCf 59 K 151-K00 E3 ~1 24 r u " 59 K 132-SOO E3 1 39 S 132-SOO E3 23 SMC m f SMA m

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

Contextual Info: Environmental Connectors B M R K N L A M N MIL-DTL-38999 Series III Type Environmental Class Connectors E B J C D C P H J T D H U P R S E 5 Series III Series II Series IV 1 6 3 B 9-35 8-35 - A 5 4 2 A B B F B F C A C B C B C L K D K N C P G B J D A L 15-5

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

TIC55

Abstract: CVSD demodulator CVSD Harris CMOS Integrated Circuits Voice encryption hp 339A FZ 77 1000 HC55564 HC-5512C/12D
Contextual Info: HARRIS SENICOND SECTOR 77 4302271 H A K K IS D Ë ] 4303571 O O O ^ H b 0 SËMICOND SECTOR 77C 09226 HARRIS D T-*?5WT C ” 5 5 5 6 4 Continuously Variable Slope Delta-modulator CVSD Features Applications • All Digital • Voice Transmission Over Data Channels (M odem s)

k1535

Abstract: 2SK1535 FP3V90 ITO-220
Contextual Info: HVXv'J-X A 7 -M O S F E T H V X SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2S K 1535 FP3V90 900v 3a — • Æ fêS î R A T IN G S A b s o lu te M axim u m R a tin g s m s Ite m ft IB H § Symbol ' $k ■ C ond itio ns a t& « R atings # tì: U n it

Contextual Info: KEMET Part Number: C056T103K1X5CR CKR05BX103KRV, M39014/01-1535V Capacitor, ceramic, 0.01 uF, +/-10% Tol, 100V, BX, Lead Spacing=0.2" General Information T L Supplier: K H See Note A G Sea ting Pla ne Specifications Capacitance: Lead Spacing: F LL Voltage:

S1055M

Abstract: SCR S1055m S0565J S6025L s6015l S2055 s1065k S101E S6010L S1035K
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more