K 0,17 F Search Results

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 749119933 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-06-12 A Mechanische Abmessungen / dimensions :

Contextual Info: EUPEC m 4TE D 3 4 0 3 3 1}? DQ0Ü150 5TT • Thyristor-diode-modules for current source inverters V V A Itsm / i 2dt Itavm ^ c 10 ms, tvj max 10 ms, tvj max 180 °el sin. kA A2s A/°C It di/dt cr tq (dv/dt)cr Rthjc *vj = tvj max DIN typ. IEC 747-6 DIN IEC 747-6

skt16

Abstract: SKT16/12C
Contextual Info: SENIKRON INC 3bE D • f il 3 b b 7 1 GQG23b3 3 m S Z K G 5EM 1KRDN 'T - z s - i'f V rsm V rrm V drm It r m s V dt / cr maximum values for continuous operation 30 A | 40 A | 50 A ITAV (Sin. 180; Tease — • •.°C) 900 800 1100 1300 1500 1700 1000 1200

FF600R17KF6CB2

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

Contextual Info: SKN 240/SKR 240 1 frms — 500 A; lF A V- 320 A SKN 240/04 SKR 240/04* SKN 240/08 SKR 240/08* SKN 240/12 SKR 240/12* SKN 240/14 SKR 240/14* SKN 240/16 SKR 240/16* V rsm 400 V 800 V 1200 V 1400 V 1600 V V r rm 400 V 800 V 1200 V 1400 V 1600 V I fav Tease = 100 °C, sin. 180 °el

a1105

Abstract: a1154 transistor a1684 Manufacturer Logos A1103 A1104 A1153 A1154 A1223 A1333
Contextual Info: SMT–Power–Inductors B82478 DATA SHEET Rated inductance 10 µH . 1000 µH Construction Ferrite core Winding: enamel copper wire Winding soldered to terminals Plastic terminal carrier Features Very high rated current Low DC resistance Suitable for reflow soldering

tlk 94

Abstract: 2N2193 High Speed Switches C4752 tfk s 220
Contextual Info: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches

Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode

Faulhaber 012 SR

Abstract: mnm1314
Contextual Info: DC-Micromotors 2 mNm Precious Metal Commutation For combination with Gearheads: 15A, 16A, 16/7 Encoders: IE2 – 16 . 512 Series 1717 . SR 1717 T UN R P2 max. η max. 003 SR 3 1,07 1,97 69 006 SR 6 4,30 1,96 69 012 SR 12 17,1 1,97 70 018 SR 18 50,1 1,50

2SK2166-01R

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

S1185

Abstract: B78108S1105J siemens ferrite radial S1184 250/250/ptc s1185 8/ptc s1185
Contextual Info: HF-Drosseln RF Chokes Bedrahtet / Leaded Bobbin-Core Baureihe BC BC series Rollenkern aus Ferrit Sì Baureihe HBC iS H llilill HBC series BC-Drossel mit höherem Nennstrom Maße mm 0 x /: 4,0 x 9,2 lEC-Klimakategorle 55/125/56 Lieferform axial oder radial

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7440329470 LF RoHS compliant SMD HF-Drossel WE-LQ SMD HF-CHOKE WE-LQ DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions:

A3120

Abstract: a3101 a3150 a3150 data sheet A3100 rfq a3100 a3151 Datasheet A3120 diode hp 2800 hp 2800
Contextual Info: SMT Inductors, SIMID Series B82496-A SIMID 0603-A Size 0603 EIA and/or 1608 (IEC) Rated inductance 1,0 to 220 nH Rated current 70 to 500 mA Construction • Copper-plated ceramic core ■ Laser-cut winding, epoxy-coated Features ■ ■ ■ ■ ■ High resonance frequency

Contextual Info: FU JI 2SK2687-01 N-channel MOS-FET S iL lM s u lt ìU e FAP-IIIB Series 30V > Features - o,oin 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

Contextual Info: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7448640409 STROMKOMPENSIERTE DROSSEL WE-FC CURRENT-COMPENSATED CHOKE WE-FC DATUM / DATE : 2011-09-01 A Mechanische Abmessungen / dimensions:

503k

Abstract: ferrite drum core PP10D-101K drum core
Contextual Info: P/PP SERIES High inductance chokes These chokes are wound in an open magnetic circuit ferrite drum core with pins. They have a very compact size and they are available in a wide range of inductance and current rating, wich provides a high degree of humidity resistance.

FD9515

Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Contextual Info: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International

8ohm LS

Abstract: FF800R12KL4C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

IGBT FZ 1200

Abstract: FZ2400R12KL4C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

503k

Abstract: PL 680k chockes AC183
Contextual Info: PREMO P/PP SERIES Inductive Components for General Applications Coils and Chokes for general use High inductance chokes These chokes are wound in an open magnetic circuit ferrite drum core w ith pins. They have a very compact size and they are available in a wide range o f inductance

a1273 transistor

Abstract: a1273 A3120 B82422-A1102-K108 a1273* transistor epcos 800 08 transistor a1273 a1152 a1273* transistor datasheet a3150 data sheet
Contextual Info: SMT Inductors, SIMID Series B82422-A*-+100 SIMID 1210-100 Size 1210 EIA or 3225 (IEC) Rated inductance 0,0082 to 100 µH Rated current 65 to 800 mA Construction • Ceramic or ferrite core ■ Laser-welded winding ■ Flame-retardant encapsulation Features

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth