K 0,17 F Search Results
K 0,17 F Price and Stock
Vishay Intertechnologies CRCW0201768KFKEDThick Film Resistors - SMD 1/20watt 768Kohms 1% 100ppm |
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CRCW0201768KFKED | 54,388 |
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Vishay Intertechnologies CRCW0201715RFKEDThick Film Resistors - SMD 1/20watt 715ohms 1% 100ppm |
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CRCW0201715RFKED | 9,349 |
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Micro Crystal AG CM8V-T1A-32.768k-12.5pF-20PPM-TB-QACrystals 32.768 kHz 12.5 pF +/-20 PPM AEC-Q200 |
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CM8V-T1A-32.768k-12.5pF-20PPM-TB-QA | 7,017 |
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Microchip Technology Inc SST39WF1601-70-4I-B3KENOR Flash 16M (1Mx16) 70ns 1.65-1.95V Indust |
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SST39WF1601-70-4I-B3KE | 2,963 |
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Amphenol Corporation 10170438-10802KLFHeaders & Wire Housings MICROSPACE HIGH VOLTAGE-1200V HEADER HOR ASSY |
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10170438-10802KLF | 1,284 |
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K 0,17 F Datasheets Context Search
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Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 749119933 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-06-12 A Mechanische Abmessungen / dimensions : |
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D-74638 | |
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Contextual Info: EUPEC m 4TE D 3 4 0 3 3 1}? DQ0Ü150 5TT • Thyristor-diode-modules for current source inverters V V A Itsm / i 2dt Itavm ^ c 10 ms, tvj max 10 ms, tvj max 180 °el sin. kA A2s A/°C It di/dt cr tq (dv/dt)cr Rthjc *vj = tvj max DIN typ. IEC 747-6 DIN IEC 747-6 |
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skt16
Abstract: SKT16/12C
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GQG23b3 SKT16/12 SKT10/10D 013bb71 B3-11 G0023bà SKT16 SKT24 skt16 SKT16/12C | |
FF600R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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Contextual Info: SKN 240/SKR 240 1 frms — 500 A; lF A V- 320 A SKN 240/04 SKR 240/04* SKN 240/08 SKR 240/08* SKN 240/12 SKR 240/12* SKN 240/14 SKR 240/14* SKN 240/16 SKR 240/16* V rsm 400 V 800 V 1200 V 1400 V 1600 V V r rm 400 V 800 V 1200 V 1400 V 1600 V I fav Tease = 100 °C, sin. 180 °el |
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a1105
Abstract: a1154 transistor a1684 Manufacturer Logos A1103 A1104 A1153 A1154 A1223 A1333
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B82478 B82478 A1333 A1473 A1683 A1104 a1105 a1154 transistor a1684 Manufacturer Logos A1103 A1153 A1154 A1223 | |
tlk 94
Abstract: 2N2193 High Speed Switches C4752 tfk s 220
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Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode |
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53SbQS C67078-A1005-A2 | |
Faulhaber 012 SR
Abstract: mnm1314
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2SK2166-01RContextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications |
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2SK2166-01R 2SK2166-01R | |
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Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications |
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2SK2166-01R | |
S1185
Abstract: B78108S1105J siemens ferrite radial S1184 250/250/ptc s1185 8/ptc s1185
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2143-B 1222-K B82143-A1272-K B82143-B1272-K B82143-A1332-K B82143-B1332-K B82143-A1392-K B82143-B1392-K B82143-A1472-K B82143-B1472-K S1185 B78108S1105J siemens ferrite radial S1184 250/250/ptc s1185 8/ptc s1185 | |
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Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7440329470 LF RoHS compliant SMD HF-Drossel WE-LQ SMD HF-CHOKE WE-LQ DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions: |
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D-74638 | |
A3120
Abstract: a3101 a3150 a3150 data sheet A3100 rfq a3100 a3151 Datasheet A3120 diode hp 2800 hp 2800
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B82496-A 603-A Sn90Pb10 B82496-A3680-+ B82496-A3820-+ B82496-A3101-+ B82496-A3121-+ B82496-A3151-+ B82496-A3181-+ B82496-A3221-+ A3120 a3101 a3150 a3150 data sheet A3100 rfq a3100 a3151 Datasheet A3120 diode hp 2800 hp 2800 | |
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Contextual Info: FU JI 2SK2687-01 N-channel MOS-FET S iL lM s u lt ìU e FAP-IIIB Series 30V > Features - o,oin 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier |
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2SK2687-01 277Typical | |
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Contextual Info: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control |
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2SK2691-01R | |
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Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7448640409 STROMKOMPENSIERTE DROSSEL WE-FC CURRENT-COMPENSATED CHOKE WE-FC DATUM / DATE : 2011-09-01 A Mechanische Abmessungen / dimensions: |
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D-74638 | |
503k
Abstract: ferrite drum core PP10D-101K drum core
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P6D-820K P10D/PP10D-681K P10D/PP10D-102K P10D/PP10D-152K P10D/PP10D-222K P10D/PP10D-332K P10D/PP10D-472K P10D/PP10D-682K P10D/PP10D-103K 503k ferrite drum core PP10D-101K drum core | |
FD9515
Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
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T-35-25 IRFR020, IRFR022, IRFU020, IRFU022 FD9515 k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a | |
8ohm LS
Abstract: FF800R12KL4C
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IGBT FZ 1200
Abstract: FZ2400R12KL4C
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503k
Abstract: PL 680k chockes AC183
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P6D-820K P10D/PP10D-151K 0D/PP1OD-221K P10D/PP10D-331K P10D/PP10D-471K P10D/PP10D-681K P10D/PP10D-102K P10D/PP10D-152K 0D/PP10D-222K P10D/PP10D-332K 503k PL 680k chockes AC183 | |
a1273 transistor
Abstract: a1273 A3120 B82422-A1102-K108 a1273* transistor epcos 800 08 transistor a1273 a1152 a1273* transistor datasheet a3150 data sheet
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B82422-A* a1273 transistor a1273 A3120 B82422-A1102-K108 a1273* transistor epcos 800 08 transistor a1273 a1152 a1273* transistor datasheet a3150 data sheet | |
ieee802.11bContextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth |
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CGB240B 22dBm, -33dB IEEE802 ieee802.11b | |