K 0,17 F Search Results
K 0,17 F Price and Stock
Vishay Intertechnologies CRCW0201715KFKEDThick Film Resistors - SMD 1/20watt 715Kohms 1% 100ppm |
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CRCW0201715KFKED | 9,816 |
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Micro Crystal AG CM8V-T1A-32.768k-12.5pF-20PPM-TB-QACrystals 32.768 kHz 12.5 pF +/-20 PPM AEC-Q200 |
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CM8V-T1A-32.768k-12.5pF-20PPM-TB-QA | 8,621 |
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Vishay Intertechnologies CRCW0201787KFKEDThick Film Resistors - SMD 1/20watt 787Kohms 1% 100ppm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CRCW0201787KFKED | 7,756 |
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Vishay Intertechnologies CRCW0201732KFKEDThick Film Resistors - SMD 1/20watt 732Kohms 1% 100ppm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CRCW0201732KFKED | 7,678 |
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Microchip Technology Inc SST39WF1601-70-4I-B3KENOR Flash 16M (1Mx16) 70ns 1.65-1.95V Indust |
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SST39WF1601-70-4I-B3KE | 3,016 |
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K 0,17 F Datasheets Context Search
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igbt module bsm 200
Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
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thyristor 12V 1A
Abstract: TZ810N22KOF
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TZ810N22KOF thyristor 12V 1A TZ810N22KOF | |
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Contextual Info: Technische Information / technical information Netz-Dioden-Modul Rectifier Diode Module DZ1070N28K Key Parameters VDRM / VRRM 2800 V IFAVM 1070 A TC=100°C IFSM vT0 41000 3570A A (TC=55°C) 0,8 V rT 0,17 mΩ RthJC 0,0435 K/W Baseplate 70 mm Weight 2750 g |
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DZ1070N28K | |
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Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT170N Key Parameters VDRM / VRRM 1200 V – 1800 V ITAVM 170 A TC=85 °C ITSM VT0 5200 A 3570A (TC=55°C) 0,95 V rT 1,0 mΩ RthJC 0,17 K/W Base plate 50 mm |
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TT170N | |
tianma lcd
Abstract: S6B0715A11-B0CZ lcd 7011 CS-211
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S6B0715A11-B0CZ TM9632E tianma lcd S6B0715A11-B0CZ lcd 7011 CS-211 | |
SP201
Abstract: TB-102 HDL2
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28VDC SP201 TB-102 HDL2 | |
LED alta luminosidad
Abstract: sensor ultrasonico 3RG6451-3CC00 led amarillo SENSOR DE TEMPERATURA ultrasonico led verde led verde 2V ULTRASONICO ultrasonic transducer au 3ZX1012-0RG64-1CA1
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3RG6451-3CC00 3ZX1012-0RG64-1CA1 LED alta luminosidad sensor ultrasonico 3RG6451-3CC00 led amarillo SENSOR DE TEMPERATURA ultrasonico led verde led verde 2V ULTRASONICO ultrasonic transducer au 3ZX1012-0RG64-1CA1 | |
E86060
Abstract: 5NM60 L400 M18S 3ZX10 bero 3ZX1012-0R seconda Basso 3ZX1012
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3RG6421-3RS00 3ZX1012-0RG64-1BA1 E86060 5NM60 L400 M18S 3ZX10 bero 3ZX1012-0R seconda Basso 3ZX1012 | |
3ZX1012-0R
Abstract: pulsador 4 pines 3RG6432-3BB00 pulsador sensor de barrera 3ZX1012-0RG64-2AA1 sensor ultrasonico 3zx1012 rifle fotocellula
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3RG6432-3BB00 3ZX1012-0RG64-2AA1 3ZX1012-0R pulsador 4 pines 3RG6432-3BB00 pulsador sensor de barrera 3ZX1012-0RG64-2AA1 sensor ultrasonico 3zx1012 rifle fotocellula | |
aeg thyristors
Abstract: AEG T 508 N 1200 aeg T7N AEG T 51 N 1200 T5N400 KL42C T 718 N 1400 AEG aeg tt 18 n 1200 aeg tt 46 n 1200 TT 45 N 1200
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KL038 aeg thyristors AEG T 508 N 1200 aeg T7N AEG T 51 N 1200 T5N400 KL42C T 718 N 1400 AEG aeg tt 18 n 1200 aeg tt 46 n 1200 TT 45 N 1200 | |
UAF42
Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
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UAF42 PR02641 \UAF42 JCH42 UAF42 UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939 | |
dd 76 N powerblockContextual Info: Rectifier Diode Modules Type V rrm Ifr m sm V A Ifsm A 10 ms, VRSM = VRRM + 100 V Jpdt IfavM / T c A2s A/°C 10ms, T vjmaXi T vjm a x *103 28,8 V TO V T‘ V] =T1v) max rT m fi T„; RfhCK T v j m ax ° c /w °C /W °c o u tlin e 180° e! sin ^ v| rr a < |
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Contextual Info: Influence of Thermal Cross Coupling at Power Modules Ernö Temesi, Zsolt Gyimothy Vincotech Kft., H-2060 Bicske, Kossuth Lajos u. 59 Abstract The thermal impedance of the semiconductors in Power Modules is always measured for a single chip, without the influence of other surrounding dies. This article describes the increase of the junction temperature of powersemiconductors due to the cross coupling of the Rth of components placed close to each other. The influence of |
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H-2060 | |
z70u
Abstract: R100000
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max32 z70u R100000 | |
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T5N 400
Abstract: KL42C T5N400 T7.5N T24N KL210 T235N T46N K017 t16 400
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10ID9 T5N 400 KL42C T5N400 T7.5N T24N KL210 T235N T46N K017 t16 400 | |
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Contextual Info: _PREMO CS0603 Features SMD Leadless small size inductor wound on high alumina ceramic bodies. High Q factor and self-resonance frequencies, allow excellent operation in G SM frequencies, DECT, cordless communications, wireless LANs, etc. |
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CS0603 6nH-390nH) CS0603 CS0603- | |
cs0603
Abstract: JG35
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CS0603 6nH-390nH) code235 CS0603- CS0603 JG35 | |
dd 127 dd 127 dContextual Info: Rectifier Diode Modules Type V rrm I frmsm Ifsm V A VRSM = VRRM A 10 ms, + 100 V ^vjmax J i2dt A2s 10ms, •103 rT I fAVM^c V TO A/°C V mQ tvj = tij = ^vj max max RthJC RfhCK tvj max °c/w °C /W °C outline 180° el sin Baseplate = 20 mm DD 31 N 800.1600 |
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DD 127 D
Abstract: DD 31 N 800 K DD 65 N 800 K dd 127 dd 127 d dd 61 n 600 dd 127 DD 90 QDD2172 DD 61 N 800 K DD 105 N 16 L
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00D2173 DD 127 D DD 31 N 800 K DD 65 N 800 K dd 127 dd 127 d dd 61 n 600 dd 127 DD 90 QDD2172 DD 61 N 800 K DD 105 N 16 L | |
BU103
Abstract: URV5-Z2 URV5 nrv-z51 cd 1619 Dioden Tabelle EQUIVALENT cd 1031 cs Gleichrichter IEC-1010-1 NRV-Z4
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Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119250 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE RoHS compliant DATUM / DATE : 2005-06-22 |
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D-74638 | |
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Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP100R12KT4 IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData |
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FP100R12KT4 | |
b2c15Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119250 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions : |
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D-74638 b2c15 | |
cg1f
Abstract: maa 550 002 UMI
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