K/TESLA SEMICONDUCTOR Search Results

Tesla

Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
Contextual Info: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure­ ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.

tangential

Abstract: Tesla Q64003-T21
Contextual Info: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.

Tesla

Abstract: SBV595 Hall 300 Q64099
Contextual Info: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system

Q64001

Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Contextual Info: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)

Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Symbole Begriffe Symbols Terms s M agnetische Induktion B M agnetic induction Fl Linearitätsfehler 'o u t Linearity error Output current O perating current A usgangsstrom Arbeitsstrom , Betriebsgleichstrom A juI !

Hall Siemens sbv 525

Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Contextual Info: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25

RHY17

Abstract: RHY18 Q61708 tesla semiconductor Hall 300
Contextual Info: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super­

RHY10

Abstract: RHY11 APP20 Q61708
Contextual Info: R H Y 10, RHY11 Axial field probes RHY 10 and RHY 11 are Hall generators for measuring axiaf magnetic fields in smaller and larger respectively diameter bores (semiconductor material InAs). Hall voltage leads: blue tubing; control current leads: red tubing.

magnetoresistor

Contextual Info: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m

FC33

Abstract: S290 Q64003-F FC34 Fc-34 FC32
Contextual Info: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33

we381

Abstract: magneto resistor
Contextual Info: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

variable resistor 104

Abstract: Q65412-L100
Contextual Info: Differential Magneto Resistor FP 412 L 100 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction

TESLA 1

Abstract: 104Gauss
Contextual Info: Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction

Q65420-L90

Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
Contextual Info: Double Differential Magneto Resistor FP 420 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage

SBV579

Abstract: tesla semiconductor
Contextual Info: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi­ conductor material InAs . The electrical system is protected by a coat of varnish.

magneto resistor

Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
Contextual Info: Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage

Q65110-L80F

Abstract: Q65410-L80E TESLA 1
Contextual Info: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Version 2.0 Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage

Q65110-L80F

Abstract: Q65410-L80E
Contextual Info: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage

SBV566

Abstract: hall generator sbv 566 SBV570
Contextual Info: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there

Contextual Info: SIEMENS Double Differential Magneto Resistor FP 420 L 90 1.6 pin connection 2 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems. Approx, weight 0.2 g GPX06896 Dimensions in mm Features Typical applications • • •

Hall sensors Siemens

Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
Contextual Info: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As

Contextual Info: SIEMENS FP 412 L 100 Differential Magneto Resistor ’ ^Punching—points 00.8 ;=[o.o4ic W o j s ia ; 1) If delivery os tape,separate at punching—poinls 2) Connections on both sides free of lacquer 3) Mechanical connections 4) Center-distance between the Diff,-Systems

Contextual Info: SIEMENS FP 410 L 4x80 FM Double Differential Magneto Resistor •//[(Hie! .6 pin connection {-1 0 .2 5 ] B': 0.25] A] i-[0 '.0 4 [C ] c o ld ii [ B i 1) 2) 3) 4) If delivery as lape, separate a l p u n ch in g -p o in ts Connections on both sides free of lacquer