JY 604 Search Results

MAX186A

Abstract: MAX186_CWP MAX186_EAP
Contextual Info: j\A S ïX A jy { 19-0123; Rev. 1,8/93 Low-Pow er, 8-C hannel, S ù rial 12-B it ADCs The 4-wire serial interface directly connects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320

MS213A

Abstract: TKAL140 tgdv 606
Contextual Info: «ALTERNISTORS» bidirectional devices for reactive circuits and frequencies over 60 Hz O «ALTERNISTORS» dispositifs bidirectionnels pour circuits réactifs f ré q uences supérieures à 60 Hz th o m s o n -c s f Types V DWM ± It s m 20 ms V 60 Arms ! Tcase

TKAL 240

Abstract: alternistor alternistor tkal THOMSON-CSF TKAL Thomson-CSF S444 et C 608
Contextual Info: alternistor selector guide THOMSON-CSF guide de sélection alterrïistors 209 «ALTERNISTORS» bidirectional devices for reactive circuits and frequencies over 60 Hz O «ALTERNISTORS» dispositifs bidirectionnels pour circuits réactifs f réquences supérieures à 60 Hz

1669M-96

Abstract: B9106 en 60721-3-3 1/takamisawa RELAYS jy 110
Contextual Info: The Power in Electrical Safety Main Catalogue Edition 1/2014 BENDER Group Main Catalogue Edition 1/2014 Subject to change! – Bender GmbH & Co. KG, Germany The catalogue and the articles and illustrations which it contains are protected by copyright. Distribution, translation, microfilming and storing in electronic systems, particularly for commercial purposes, are not permitted without prior permission from the author. We accept no liability

11851

Abstract: 2XPT100 JUMO DIN32676 jumo tm EN 60 751 2XPT100 jumo 902810 pa66 fr COM PA66
Contextual Info: ±*t± ftK * £ ^ « 5 0 3 ^ 0086-0411 6666050 (0086-0411)6666053 6666051 E ~ ma ¡I:¡nfo@jumo-ch¡na. com 6666052 Website:http://www. jumo-china, com (JUMO) l£ }Js^ 9 0 . 2810 * IiJ;S ^ É H -5 0 °C ~ + 2 5 0 °C * u w m m - . * é-ciP/Sffl m m nn X ^ l k í P M Í 5 # É

Contextual Info: 3 DRAWING MADE IN THIRD ANGLE PR OJE CT IO N THIS DRAWING IS U N P U B L I S H E D . C C o p y r ig h t RESERVED. 19 AMP PRODUCTS MAY R E L E A S E D FOR PUBLICATION by AM P BE COVERED Inco rporated, BY U . S . F O R E IG N ♦ A ll PATENTS in t e r n a t io n a l

6MB115

Abstract: 6MBI15L-060 AC2500 T930 UMCQ TF3000 6MB11
Contextual Info: 6MBI15L-060 15A : Outline Drawings IGBT MODULE : Features • High Speed Switching • Ifcfi&iofl/E Low Saturation Voltage • S iA rfrV — h $ £ # i(M O S y — H H iit) • High Input Impedance Module Packaging • 3 J & ! : Applications • General Purpose Inverter

SC70-3L

Contextual Info: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)

tuned amplifier

Abstract: 10M100 Maxim MAX436CPD MAX435CSD MAX436CPD MAX435 MAX435CPD MAX435EPD MAX435ESD MAX436
Contextual Info: 19-0042; Rev 1; 4/93 / M / I X I A 1 W ideband Transconductance A m plifiers The current output and the absence of negative feedback allow the differential output MAX435 to achieve a bandwidth of 275MHz, an 800V/ xs slew rate, and a 1% settling time of 18ns to a 0.5V step input. The single­

Contextual Info: M C /H y b rid ICs ROHM CO BP3Ö08/BP3009 L T D M OE B 1P3 0 0 8 F A X ^ l ä ^ • T> O . “ 7 0 2 0 ^ = 5 *y h O Q O S n ? 2 B R H M ■ ~ p 7 S -0 7 -lS T Telephone Sets for FAX B P 3 0 0 9 BP3008/BP3009 IÍ , FAX t <»&m £ # J t K T 'to BP3008/BP3009 are telephone units developed for

lm 6806 A

Abstract: MAX6806/MAX6807/MAX6808
Contextual Info: 19-1421; Rev 0; 1/99 > k l> J X I > k l Voltage D et ec t o r s _ F e a t u r e s The M AX6806/M AX6807/M AX6808 p recision voltage detectors are ideal for accurate m onitoring of pow er supplies in digital systems. They provide circuit reliabili­

Contextual Info: H!gh Performance 32KxS 3.3V CMOS SRAM p i AS7C3256 AS7C3256L Low Voltage 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply • Easy memory expansion with CE and OE inputs

HIl-STD-883

Contextual Info: REVISIONS LT R DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS O F SHEETS REV TO SHEET 12 PREPA01D BY PMICN/A STANDARDIZED MILITARY DRAWING TT -^m *> THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

TC5092AP

Contextual Info: TC5092AP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 5092AP C^MOS 13-BIT A/ D CONV ERT ER G E N ERAL DESC R I P T I O N The TC5092AP is an i n t egration 13-bit A/D converter of high p r e c i s i o n and low power consumption. The 13-bit, 3-state data output is capable of

JRC062

Abstract: T36X F2956 c322 kemet mil F3100 F3101 kemet C326 capacitor GR900 6800J
Contextual Info: P roduct S e l e c t io n G u id e KEMET AL CHIPS CHIPS AO-CAP Surface Mounted Device 33-470 ij F A700 Organic en f-py| Polymer V T A N l ï Â l L Uj M (Surface Mounted Device) 0.1-1500pF -H h -“ l)-Ss8U-S8ll)-2*5|}- Ss§U- gi3|HfcS|] ' O (7343-20) X

Contextual Info: 32K X 36, 3.3V SYNCHRONOUS BURST SRAM WITH FLOW-THROUGH OUTPUTS PRELIMINARY IDT71V537 Integrated Device Technology, Inc. FEATURES: • • • • • • • 32K x 36 m em ory configuration Supports high perform ance system speed - up to 75 MHz 8 ns C lock-to-D ata Access

Contextual Info: SAMSUNG ELECTRONICS INC h ?E KM416C157A ]> • 7Tb4142 0015^21 400 ■■ S M G K CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C157A is a CMOS high speed 262,144 b itx 1 6 Dynamic Random Access Memory. It's

Contextual Info: 32K X 36, 3.3V SYNCHRONOUS BURST SRAM WITH FLOW-THROUGH OUTPUTS PRELIMINARY IDT71V537 Integrated Device Technology, Inc. FEATURES: • • • • • • • 32K x 36 m em ory configuration Supports high perform ance system speed - up to 75 MHz 8 ns C lock-to-D ata Access

2N5017

Abstract: 2SD2350 CP405 1711-1602 2SD234r 2SD235Y BD116 bo113 description BD145 T062
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

SPD1F

Abstract: SPCHF-DLT1151 W83L517 PC87591E-VLB D 5621 STK 031 Stereo amplifier D72020 X2FIC Alc201A ocn18
Contextual Info: SCJSSS.sSSslsisliltcliEEElliSffEEffSi K iiK iS iiiiiiiiiB iiie E B E B ilillE iilE lllliE E B / / / / / / / / / / / / / / / / / ✓ ✓ .m T . -B21r DfiO B77T. D#1 D#2 D63 CVlS DM ¡> 5 TO' HO-3 HD-4 HCMi "W R T ~ m r HD-8 W 8 . HD-10 >0-11 TO 3 h o -13

a40 5pin

Abstract: 64mx16 THMRL LDQB 5pin
Contextual Info: TO SHIBA THMR1N8E-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 16-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1N8E is a 67,108,864-word by 16-bit direct rambus dynamic RAM module consisting of TC59RM716MB Direct Rambus DRAMs on a printed circuit board.

moh268

Contextual Info: S ta n d a r d P r o d u c t PM I I PMC-Sierra, Inc. 1^^ PRELIMINARY INFORMATION P M 5361 TU P P SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR PM5361 TUPP SONET/SDH T R I B U T A R Y UNI T P A Y L O A D PROCESSOR P r e l i m i na ry Issue PMC-Sierra, Inc.

ls7474

Abstract: ic ls7474 dot matrix lcd sed 1503 EEG Block diagram eeg circuit examples ls7474 ttl SED1500series KKZ 09 8255-2 SED1502
Contextual Info: 09-JAN-E002 14:08 02- it 1- UON:EPSON EUROPE ELECTR. 49 S9 14 5117 7 ; 1 6:23 ;W - z l 'J 'J t E D g IS ìÉ S J AN:419 EEG S. 001^03E 1042 5 8 7 5 6 2 4 1/ MF016-01 SUWA SEIKOSHA O - t o K u dc, o technical manual SED1500series DOT M ATRIX LCD DRIVER

BD9886FV

Abstract: BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352
Contextual Info: 2008 SPRING Energy saving ! ECO Devices E x c e lle n c e in E le c tro n ic s ROHM ECO Devices Using ROHM ECO Devices saves energy and reduces CO2 generation. At ROHM we are committed to saving energy by reducing the power consumption of equipment. This starts at the component level - the basic building blocks of all circuits. ROHM, the leading