JTP 55 diode
Abstract: diode sod57 SOD87 sod87 package Schottky SOD87 JTP 38 diode JTp 07
Contextual Info: Philips Semiconductors Thermal Considerations - Diodes General THERMAL CONSIDERATIONS - DIODES Thermal resistance Circuit performance and long-term reliability are affected by the temperature of the die. Normally, both are improved by keeping the die temperature junction temperature low.
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mbh562mga200jtp 55 diodediode sod57+5sod87sod87 packageschottky sod87jtp 38 diodejtp 07
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JTP 68 diode
Abstract: SOD87 SC70-6 SO20 SSOP16 SSOP24 Thermal Considerations for Power Semiconductors SOD-64 SOD-106 SOD-83
Contextual Info: Philips Semiconductors Power Diodes Thermal Considerations Thermal resistance Circuit performance and long term reliability are affected by the temperature of the chip. Normally, both are improved by keeping the chip temperature junction temperature low.
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ot428ot404jtp 68 diodesod87+8sc70-6so20ssop16ssop24thermal considerations for power semiconductorssod-64sod-106sod-83
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JTP 38 diode smd
Abstract: p2w smd Transistor SMD SOT363 SC70 SC11 SC70-6 SO20 SSOP16 SSOP24 SC11 Thermal Considerations SOD61
Contextual Info: DISCRETE SEMICONDUCTORS General Section Module Thermal Considerations Module: THC00X Valid for: SC11 Thermal Considerations Power Diodes 1998 Dec 09 Philips Semiconductors Power Diodes Thermal Considerations THERMAL CONSIDERATIONS Thermal resistance junction
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thc00xot404jtp 38 diode smdp2w smd+8transistor smd sot363 sc70sc11sc70-6so20ssop16ssop24sc11 thermal considerationssod61
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Contextual Info: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT
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18-ghztgs8632-xcc43-db15-db |
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BYV27
Abstract: BYV27-50 BYV27 Series
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 1997 Nov 24 Philips Semiconductors Product specification Ultra fast low-loss
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m3d116byv27sca56117027/1200/04/pp16+2byv27-50byv27 series
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BYV27
Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 BYV27 Series
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 File under Discrete Semiconductors, SC01 1997 Nov 24 Philips Semiconductors
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m3d116byv27fat31sca56+10117027/1200/04/pp16byv27-50byv27-100byv27-150byv27-200byv27-300byv27-400byv27-500byv27-600byv27 series
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BYG80C
Abstract: BYG80D BYG80 BYG80A BYG80B BYG80F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 File under Discrete Semiconductors, SC01 1997 Nov 25 Philips Semiconductors Product specification
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m3d168byg80do-214accapabilit31+7sca56117027/1200/02/pp20byg80cbyg80dbyg80abyg80bbyg80f
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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m3d168byg80do-214acsca56+1117027/1200/02/pp20
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BYV27
Abstract: BYV27 Series BYV27-50 PHILIPS BYV27 BYV27-200-TR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 1997 Nov 24 Philips Semiconductors Product specification Ultra fast low-loss
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m3d116byv27limiti80163byv27200+7byv27-200byv27400byv27-400byv27-50byv27 seriesphilips byv27byv27-200-tr
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BYD77D
Abstract: BYD77C BYD77Eto BYD77 DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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m3d121byd77135002/03/pp12byd77d+3byd77cbyd77etobyd77 diode
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BYD57M
Abstract: SOD87 marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD57 series Ultra-fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1998 Dec 04 1999 Nov 11 Philips Semiconductors Product specification Ultra-fast soft-recovery
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m3d121byd57135002/04/pp12byd57m+1sod87 marking
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100H03
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled
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m3d121byd57mam061sca60+2135106/00/03/pp12100h03
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BYV28
Abstract: BYV28-50 diode handbook philips general part byv28 BYV28-100 BYV28-150 BYV28-200 BYV28-300 BYV28-400 BYV28-500 BYV28-600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV28 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 File under Discrete Semiconductors, SC01 1997 Nov 24 Philips Semiconductors
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m3d118byv28absorpti31sca56+10117027/1200/05/pp16byv28-50diode handbook philips general part byv28byv28-100byv28-150byv28-200byv28-300byv28-400byv28-500byv28-600
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled
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BYG80A
Abstract: SOD-106 str 40115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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m3d168byg80do-214acchod106+4od106byg80asod-106str 40115
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BYD77D CROSS REFERENCE
Abstract: MARKING BYD77g str 40115 byd77b MARKING BYD77D BYD77D smd diode marking code t3 BYD77 STR 50115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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m3d121byd77mam061byd77c+8byd77dbyd77d cross referencemarking byd77gstr 40115byd77bmarking byd77dsmd diode marking code t3str 50115
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str 30135
Abstract: sod87 package smd marking 242
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD57 series Ultra-fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1998 Dec 04 1999 Nov 11 Philips Semiconductors Product specification Ultra-fast soft-recovery
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m3d121byd57mam061str 30135+2sod87 packagesmd marking 242
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled
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m3d119byd53byd53jbyd53k+2byd53mbyd53v
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742 ggt
Abstract: D176G ZZ6.8
Contextual Info: 53,+3. .K[D176GB/ =?/8696.>?<2 69>2<8216.>2 ;:A2< <27.B 3GDQROGP Y 9B nrdo^cdib ^\k\]dgdot Gdg` Oj2>F57895; Y Dm``k\b`3^g`\m\i^` _dno\i^`A<hh Y 9fW _d`g`^omd^ nom`iboc .]`or``i ^jdg \i_ ^jio\^on/ Y 5 Gjmh B h``on WEF 4;440 4:75 m`diajm^` dinpg\odji Gdg` Oj2>8444:5<6
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d176gb/f57895drd4944545668wed/+4894hx/742 ggtd176gzz6.8
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L21 SMD
Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
Contextual Info: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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kas29/kas31/kas35bas29/bas31/bas35ot-23kas35+11kas31kas29l21 smdsmd l21jtp smd diodesmd diode 1301l20 smdbas35l21 diode markingtp50ssmd diode marking t1
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Contextual Info: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector
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kas29/kas31/kas35bas29/bas31/bas35ot-23kas35+2kas31kas29
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jtp 84
Abstract: jtp 87 VRLA UL924 817 CN
Contextual Info: Powered by MSJ 150 2V 150Ah MSJ 150 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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150ah10hr-rate02/celljtp 84+4jtp 87vrlaul924817 cn
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D122 BYV1100 Fast soft-recovery rectifier Product specification 1998 Dec 03 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package
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m3d122byv1100mam123sca60+1135106/00/01/pp12
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BYG26
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BYG26 series SMA ultra fast soft-recovery controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast soft-recovery controlled avalanche rectifiers
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