JTP 84 Search Results
JTP 84 Price and Stock
Kamaya Inc RMC1/8-472JTPThick Film Resistors - SMD 1206 4K7 5% Lead Free |
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RMC1/8-472JTP | 36,026 |
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Kamaya Inc RMC1/8-471JTPThick Film Resistors - SMD 470 Ohm 5% |
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RMC1/8-471JTP | 23,266 |
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Kamaya Inc RMC1/8-4R7JTPThick Film Resistors - SMD 1206 4R7 5% Lead Free |
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RMC1/8-4R7JTP | 18,049 |
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Kamaya Inc RMC1/8-434JTPThick Film Resistors - SMD 1206 430K 5% Lead Free |
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RMC1/8-434JTP | 15,000 |
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Kamaya Inc RMC1/8-432JTPThick Film Resistors - SMD 1206 4K3 5% Lead Free |
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RMC1/8-432JTP | 7,700 |
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JTP 84 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT |
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18-GHz TGS8632-XCC 43-dB 15-dB. | |
BYV27
Abstract: BYV27-50 BYV27 Series
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M3D116 BYV27 SCA56 117027/1200/04/pp16 BYV27-50 BYV27 Series | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers |
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M3D168 BYG80 DO-214AC SCA56 117027/1200/02/pp20 | |
BYD77D
Abstract: BYD77C BYD77Eto BYD77 DIODE
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M3D121 BYD77 135002/03/pp12 BYD77D BYD77C BYD77Eto BYD77 DIODE | |
BYD57M
Abstract: SOD87 marking
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M3D121 BYD57 135002/04/pp12 BYD57M SOD87 marking | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled |
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M3D119 BYD53 SCA60 135106/00/04/pp12 | |
BYV28-200
Abstract: BYV28 BYV28-50
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M3D118 BYV28 SCA56 117027/1200/05/pp16 BYV28-200 BYV28-50 | |
742 ggt
Abstract: D176G ZZ6.8
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D176GB/ F57895; DRD49445456; 68WED/ 894hX/ 742 ggt D176G ZZ6.8 | |
L21 SMD
Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
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KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1 | |
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Contextual Info: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector |
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KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D122 BYV1100 Fast soft-recovery rectifier Product specification 1998 Dec 03 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package |
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M3D122 BYV1100 MAM123 SCA60 135106/00/01/pp12 | |
BYG26Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BYG26 series SMA ultra fast soft-recovery controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast soft-recovery controlled avalanche rectifiers |
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M3D168 BYG26 DO-214AC 603502/250/01/pp12 | |
BYW28 200
Abstract: BYW28 BYW28-600 SOD115 BYW28-500
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M3D333 BYW28 OD115 half31 SCA56 117027/1200/01/pp12 BYW28 200 BYW28-600 SOD115 BYW28-500 | |
Diode SMA marking code PB
Abstract: es1d st
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M3D168 DO-214AC 603502/250/01/pp12 Diode SMA marking code PB es1d st | |
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DIODE US1J
Abstract: US1G diode
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M3D168 DO-214AC 603502/250/01/pp12 DIODE US1J US1G diode | |
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Contextual Info: 1N4933 to 1N4937 FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in T V |
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1N4933 1N4937 1N4933 b53T31 | |
smd code marking A8 diode
Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
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M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35 | |
diode S1J
Abstract: S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M
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M3D168 DO-214AC cathod40 603502/250/01/pp12 diode S1J S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 11 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series FEATURES DESCRIPTION |
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M3D130 BZV85 DO-41) BZV85-C3V6 BZV85-C75) 115002/00/02/pp8 | |
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Contextual Info: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: |
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BAS29; BAS31; BAS35 BAS29 BAS31 M8H32 | |
MBK215
Abstract: MBK212 mbk225
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M3D168 BYG85B DO-214AC MSA474 DO-214AC; OD106) SCA60 135106/00/01/pp12 MBK215 MBK212 mbk225 | |
b9v1Contextual Info: b^E D N AUER PHILIPS/DISCRETE b b 5 3 ^ 3 1 DDEbflDb D3Q H A P X I BZX79 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended fo r use as low voltage stabilizers or voltage references. They are available in fo u r series; each series having a different tolerance rating, one series |
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BZX79 DO-35 bbS3T31 7Z59232 002bfllfl bbS3R31 bb53T31 0D2b62D b9v1 | |
B238BContextual Info: 642-*B ?A0:7;7/@A>3 ?75;/9 >39/E 4JFVWTJU ^ 9eW ^c_f_]nlc] mnl_hanb /\_nq_h ]icf [h^ ]ihn[]nm0 ^ Tola_ qcnbmn[h^ pifn[a_ oj ni <666WBD2 g_nm GDD Q[ln <> [h^ U_f_]il^c[ ^ Nch4 ]l_j[a_ cm 84;gg /\_nq_h ]icf [h^ ]ihn[]n02 Nch4 ]f_[l[h]_ cm 846gg /\_nq_h ]icf [h^ ]ihn[]n0 |
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666WBD2 846gg 96gWED0 B238B | |
1N5822Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope, |
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b53T31 00EbT34 N5820ID/21ID/22ID OD84A 1N5820 1N5821 1N5822 1N5822 | |