JSS 57 Search Results

F740LC

Abstract: 1RF740 IRF740LC IRF1010 Marking code jSs KAH marking ScansUX36 Ultra High Voltage Hexfets
Contextual Info: PD-9.1068 International 1QR Rectifier IRF740LC HEXFET Pow er M u s t - 1 i • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30V V gs Rating w n tiu u u t;u o jss, ^ dss ~ 400V '-'OSS, v-/rss • Extremely High Frequency Operation

JSs 57

Contextual Info: February 1997 Revision 1.0 data sheet ESA2UN3282 A -(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282(A)-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282(A) supports 2K refresh.

1 pole 4 way O E N rotary switch

Abstract: 1 pole 3 way rotary switch 2 pole 6 way rotary switch 2 pole 4 way rotary switch 2 pole 3 way rotary switch wafer rotary switches 4 pole 4 way rotary switch 2 pole 12 way rotary switch JSS51207 1 pole 4 position wafer switch
Contextual Info: O/B/N AM MINIATURE ROTARY WAFER SWITCH • • • • • • • Compact, Flexible Switch Package Available in Commercial & Military Version Variety of Switching configurations Optional water sealing Resistor & capacitor decade options Optional BCD outputs

8613 series

Abstract: u254 MALE CONNECTOR OF 8613 8613 HE-10 connector HE10 he10 SOCKET 26 contacts connector 2.54 MIL-c-83503 50810
Contextual Info: '" - v - 8613 Box headers Dimensions Card drilling 13:X=4.20±0.35 23:X=2.80±0*2 ANGLED SPILL 13 & 23 14 : X = 4.35 ± 0.35 24:X=2.90±0.2 -*•’ *«-2.54 15:X=15.5±0.35 C 17.91 22.99 25.53 30.61 36.23 43.31 48.39 56.01 68.71 81.41 86.49 [B] 10.16 15.24

Contextual Info: 8613 Headers Card drilling Terminations STRAIGHT SPILL 14 & 24 ANGLED SPILL (13) 8, (23) WIRE WRAP (15) DTfl ra I I Mounting axis - 0 0.67 J X r~ 0 0.78/0.89 Mounting axis 13 : X = 4.2 ± 0.35 23 : X = 2.8 ± 0 2 14:X=4.35±0.35 24 : X = 2.9 ± 0.2 Ordering information

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S A - L X H 1225SUGD I f = 20m A ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 ’C PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY MIN TYP 574 MAX UNITS nm 2.2 2,6 Vf 5.0 50 Vr mcd 110 2x theta

72 ra l 75b

Contextual Info: cP IITSU February 1997 Revision 1.0 data sheet ESA2UN3282 A -(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282(A)-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282(A) supports 2K refresh

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSA-LXB120SUGD 2 (12 P L S . 7,00 [ 0 ,2 7 6 ] (11 P L S ,) P L S ,) FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY 8 ,5 0 2 5 ,4 0 ANODE [0 ,3 3 5 ] MIN TYP 574 MAX UNITS nm 2.2 2,6 Vf 5.0 50 Vr mcd 110 2x theta VIEWING ANGLE

skkt 90

Abstract: SKKT 95 SKKT 57/12 E
Contextual Info: s e M IKRD n V V Itav sin. 180; Tease ~ 74 °C 60 A V/fiS 400 500 SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A Vrs M V rrm (d v / V drm d t)cr 500 - - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/06 D

2SC697

Abstract: 2SA547 2SC697A 2SA547A NPN VCBO 80V
Contextual Info: 2SC697, 2SC697A 2SC697, 2SC697A NPN + 7° U'—J-SS/'Si NPN Epitaxial Planar ^ S ^ W I f f l / M e d i u m Power Amplifier 2SA547, 2SA547A <fc n > ~ f 'J ^ U /C om plem en tary pair with 2SA547, 2SA547A $$ /F e a t u r e s • 3 1/ ^ • — -X ll,E E VcBO £ > ; * ; l ! H 'o / H i g h VCBO

E700G

Contextual Info: tifca Specification Electronics Raychem Control Drawing TCFS- * * - * * * —0 * * - 25BW a Part as supplied. I HOT-MELT ADHESIVE 51048) V A DIA f — t IT I— t e J DJA b) Part after unrestricted recovery, R L M Jl L -J L- J DIA KIT S TO INCLUDE C L E A N I N G TISSUE,

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT SSA -LXB 52 5SU G D 5,30 [0,209] 5 PLS. 7,00 [0,276] 3,80 [0,150] REV. 1= 1 1= 1 1= 1 1= 1 1= 1 1 2 3 4,70 [0,185] -1 4 6,10 [0,240] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X PARAMETER 5 MIN PEAK WAVELENGTH FORWARD VOLTAGE

Contextual Info: ttjca Specification Electronics Raychem Control Drawing T C F S - -0*-2 5CE a Part os supplied. b) Part after unrestricted recovery. KITS TO INCLUDE CLEANING TISSUE, 1 PIECE 100 GRIT EMERY CLOTH S 1 PIECE OF ATUM, and S 1125 ADHESIVE KIT 5 and 5 1184 CONDUCTIVE ADHESIVE KIT 3.

1Mx4 dram simm

Abstract: 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241A- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm

JSS-50402

Abstract: VEPL resistors 25W 20R 400W-500W
Contextual Info: Wire Wound Resistors VPR Series VEPL Data Sheet VPD/DTS_VPRO1 ISO 9001 : 2000 FEATURES i WATTAGES FROM 10 WATT TO 550 WATTS i RANGE FROM 0.01 OHM TO 100 K OHM i SILICONE COATED i FLAME PROOF COATED ALSO AVAILABLE i NON-INDUCTIVE TYPE ALSO AVAILABLE i ANY SPECIAL DESIGN ON REQUEST

Contextual Info: EPCOS EFD Cores Example of an assembly set Yoke Mounting dimensions of the assembly set mm Core type Length x width x height11 EFD 15/8/5 19,3 x 17,0 x 8,0 EFD 20/10/7 24,3 x 22,0 x 10,0 EFD 25/13/9 29,3 x 27,3 x 12,5 EFD 30/15/9 34,4 x 32,5 x 12,5 1) Height above mounting plane

MFQ1000C

Abstract: B757T
Contextual Info: M O T O RO L A SC XSTRS/R F 12E 0 I t3t?5SM Q U AD DUAL-IN-LINE N-CHANNEL EN H ANCEM EN T M O D E SILICON GATE TM O S FIELD EFFECT TRANSISTORS • Fast Sw itching S pee d — t0 n = toff = 10 ns M ax • L o w Drive R equirem ent, V e S th = 2.5 V M ax • Inherent Current Sharing Capability Perm its E asy Paralleling

Siemens S-89

Abstract: Siemens S 89
Contextual Info: SIEMENS BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.36 A BSP 89 VDS 240 V Type BSP 89 Ordering Code Q67000-S652 flDS(on) Package Marking 6Q SOT-223 BSP 89 Tape and Reel Information

Contextual Info: mm • F e a tu re s 1. Dim ensions: 7.0 L x 7.0(W) x 3.1 (H)mm 2. Standard brightness type has six colors such 1. M 5^^ IS 7 .0 (L )x7 .0 (W )x 3.1(H )m in r to as red, orange, yellow, green, fresh green, and pure green. Super brightness type has m», tm. nmisï'iyftm, mm

12048074

Abstract: Packard 12048074 M3606 TAXI PVDI STR F 654
Contextual Info: 16 14 15 12 13 II 10 SYMBOL DEFINITION MISSING SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL O DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. TOTAL NO OF INSPECTIONS REQUIRED 12 LAST NO. USED 10 NO MISSING

servo potentiometers

Abstract: 10K potentiometer log wire wound servo potentiometer 20k servo potentiometer AC Potentiometers RW3 Potentiometers 10K LOG Potentiometer 25K potentiometers 5k W-15 50K single turn potentiometer
Contextual Info: Estd : 1959 Single Turn Wire Wound Potentiometers R.W-1 R.W-3 SR.W-3 R.W-7.5 LN1& Stud Terminal ISO 9001:2000 CERTIFIED COMPANY SINGLE TURN WIRE WOUND POTENTIOMETERS Applications: Temperature Controllers, Power Supplies, AC/DC Motor Drives, Process Control Equipments,

RF7313

Abstract: IRF9956
Contextual Info: PD - 9.1559A International IOR Rectifier IRF9956 HEXFET Power M O SFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel MOSFET • Surface Mount • Very Low Gate Charge and Switching Losses • Fully Avalanche Rated m oi 51 Q E gi