JSS 51 Search Results

marking JSs

Abstract: RH50
Contextual Info: O/E/K 25 ROCKER ACTUATED DIP SWITCHES • • • • • SPST Configuration Spring Loaded Sliding Ball Contact System LCSO Approved to JSS 51210 High Contact Life Optional Protective Cover MATERIALS SPECIFICATIONS Contact Arrangement : SPST, 2,4,6, 8 & 10

msc 1900 2900

Abstract: TS 4140 txal 508 HC-49/msc 1900 2900
Contextual Info: PRODUCT NUMBER SEE TABLE L . REVISIONS ECN/OORf BY •Apsaoygp JSS. «g>M>oo - » » EC-V22076 MSC EC-V30869 MSC OATE 11/20/89 V26/90 VS/92 9/1/93 SHEET INOEX T O ttM N C tS U W X » OTXRWISC SPCCfiCD ELECTRONICS Jj-SH EAfFER OQt .01 /.Ot r OOOt.QQi/.OQtïïr

SBL-804B

Abstract: SBL-804Q SBL-804S SBL-804T SGD-100 SM153A SM153B SM153BM SM153C
Contextual Info: 173 - ^ '| 0 u- — e w o io -r-S -S -a : <e -s 20 *— • OOC —c —C O "i°' • O •— V f r r ? W ;£ jT V1 11$ ? ^ 5 i s s S S 5 S H ifr i SEq o S « tS £ tiS £ 9 E ^ & # W & a ® a + i s -7 + a ffi* ^+4-H •*% liiiD 3£3 ip £ £ 5 * 1 JSS«;

SBL-804B

Abstract: SBL-804Q SBL-804S SBL-804T SGD-100 SM153A SM153B SM153BM SM153C
Contextual Info: '| 0 u- — e w o io -r-S -S -a : 173 - ^ <e -s 20 *— • OOC —c —C O "i°' • O •— V f r r ? W ;£ jT V1 11$ ? ^ 5 i s s S S 5 S H ifr i SEq o S « tS £ tiS £ 9 E ^ & # W & a ® a + i s -7 + a ffi* ^+4-H •*% liiiD 3£3 ip £ £ 5 * 1 JSS«;

SBL-804B

Abstract: SBL-804Q SBL-804S SBL-804T SGD-100 SM153A SM153B SM153BM SM153C
Contextual Info: '| 0 u- — e w o io -r-S -S -a : 173 - ^ <e -s 20 *— • OOC —c —C O "i°' • O •— V f r r ? W ;£ jT V1 11$ ? ^ 5 i s s S S 5 S H ifr i SEq o S « tS £ tiS £ 9 E ^ & # W & a ® a + i s -7 + a ffi* ^+4-H •*% liiiD 3£3 ip £ £ 5 * 1 JSS«;

Contextual Info: Section A-A Section C-C 4 8 .2 2 < i!^ [C W 2 i^ ? M g M / iW riiC W i^ i f f i j i ^ ^ j i r i ^ t ^ C V S ^ liC ^ { -. <- A 5 6 7 8 tq §1 «J 10 II 12 13 14 15 16 17 I I 11 JSS 1 6 x f£ 5 > 4g 1 S ta n d a r d c o n t a c t a f t e r i n s t a l l a t i o n

JSs 57

Contextual Info: February 1997 Revision 1.0 data sheet ESA2UN3282 A -(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282(A)-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282(A) supports 2K refresh.

1 pole 4 way O E N rotary switch

Abstract: 1 pole 3 way rotary switch 2 pole 6 way rotary switch 2 pole 4 way rotary switch 2 pole 3 way rotary switch wafer rotary switches 4 pole 4 way rotary switch 2 pole 12 way rotary switch JSS51207 1 pole 4 position wafer switch
Contextual Info: O/B/N AM MINIATURE ROTARY WAFER SWITCH • • • • • • • Compact, Flexible Switch Package Available in Commercial & Military Version Variety of Switching configurations Optional water sealing Resistor & capacitor decade options Optional BCD outputs

Oak rotary switch

Abstract: wafer rotary switches JSs 51 MIL-S-3786
Contextual Info: O/E/K HM SUB-MINIATURE ROTARY WAFER SWITCH • • • • Extremely Small package Flexible Switch package Miliary Version Upto 5 sections wafer DETENT MECHANISM The exclusive OAK Tri-Ball detent mechanism is used with helical loading spring, assuring uniform detent

UNIDEX

Abstract: BCD coded rotary switch unidex rotary switch JSS51207 single pole 24 vdc 110vac MIL-S-3786
Contextual Info: • / E / I OM ROTARY WAFER SWITCHES • • • • • • Patented Unidex indexing Flexible Switch package Miliary & Commercial Version Variety of Switching configurations BCD & Hexa Decimal coded outputs Optional water sealing CRISP, UNIFORM DETENTING

VAC 4721

Abstract: JSS51207 2 pole 12 way rotary switch 2 pole 3 way rotary switch wafer rotary switches 1 pole 4 way O E N rotary switch
Contextual Info: • / E / I J/JC ROTARY WAFER SWITCH • • • • • • • • Flexible Switch package Ceramic or phenolic wafer Optional water sealing Variety of Switching configurations Resistor & Capacitor decade switch BCD output option Dropping Circuits Military and commercial versions

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

UNIDEX

Abstract: MIL-1-10 Oak rotary switch SR19 catalogue of torque switch wafer rotary switches L-422 SRW02 JSS51207
Contextual Info: HOW TO SELECT THE OPTIMUM SWITCH O/E/N offers a comprehensive range of wafer switches to meet your every switching requirement. This bulletin is intended to help the user select the optimum switch for his requirements on the basis of the variety of switch sizes, contact and insulation materials, switching configurations and options

Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0

ESA2UN3241-60JS-S

Abstract: 1MX4
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

1Mx4 dram simm

Abstract: 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241A- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

7356S

Abstract: 16HM1-1 MIL-W-5088 C0807
Contextual Info: CATALOG LISTING MICRO SWITCH FREEPORT ILLINOIS. U S A A OF DIVISION 16HM1-1 SWITCH-BASIC HONEYWELL FE D . M FG . CO D E 91829 WOBBLEFR AM ACTUATOR SEAL . 0 9 0 MAX DIA MTG H O L E / ^ X CO o a. Z UJ .0 9 0 MAX / \ ~ 5 “ 1 Ì n1 2 ELONGATED MTG HOLE / j \ -

2SC4188

Abstract: 60JIA
Contextual Info: O rdering number: EN 2557A No.2557A [_ 2SC4188 NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications Features •High breakdown voltage : V c e o —200V • Small reverse transfer capacitance and excellent high frequency ch aracteristic : cre = 1.3pF typ

vk200 choke

Abstract: MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

Contextual Info: 2SK1909 2093 2090 LD L o w D rive S eries VDSs = 1 0 0 V N Channel Power M OSFET E 4227 F e a tu r e s • Low ON re sista n c e . • V ery h igh-speed sw itch in g . • L ow -voltage driv e. •S urface m o u n t type device m a k in g th e follow ing possible.

Contextual Info: KmmoG" A W T 1 904 TX POWER MMIC A d va n ce d P rodu ct Inform ation Rev 0 Your GaAs IC Source 1900 MHz Band PCS CDMA/TDMA GaAs Power Amplifier IC DESCRIPTION: The AW T1904 is a monolithic Power Amplifier IC suited for PCS CDMA/TDMA wireless handset applications

Contextual Info: MOTOROLA Order this document by VN0610LL/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN0610LL 3 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDSS 60 Vdc Drain-Gate Voltage Rg s = 1 Vd g r 60 Vdc Gate-Source Voltage - Continuous

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)

mrf5015

Abstract: F 2452 mosfet MOSFET RF POWER TRANSISTOR VHF Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device