JS T31 Search Results

SHM-20C

Abstract: SHM-20
Contextual Info: 5 D A T E SHM-20 L High-Speed, ±0.01% Monolithic Sample-Hold INNOVATION and EXCELLENCE FEATURES • • • • • • Internal hold capacitor 1|j s Acquisition time to ±0.01 % 0.3ns Aperture uncertainty 3 x 105 DC gain ±0.08pV/|js droop rate Differential inputs

SLB9635TT12

Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
Contextual Info: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.

PC1R5-24-5

Contextual Info: T24 M H « *« «H *+. Me im iin tt * * » d c-d c3 > /< -'v h PC1R5-5-5 j» « » « a w « _ T29 T30 T31 as D C — DC= 1 > M' — ft « 2 it h P C 1 R 5 -2 4 -5 *4 4 V Figure3 3WÆ 1 9 9 9 5 4 E 1 5 B Vin !) I 1 : A: t7«(aü »: 472(JS Vin V out

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

rca connector

Abstract: AT32F-XX AT31ST COAX AT31-XX at3t AT32BC-XX AT32TF-XX
Contextual Info: COAX CONNECTOR COAX CONNECTOR Cvet'tf * f tr . B K l o f t a B K (’z tr ti ’H f t n C o m Lte » * * S S 5 4 S S 5 9 ) « 62 Utt w«>liSA1tS& 1}Se2 A T 3 2 B B -X X A T 3 2 F -X X FIB E R CO UPLER st r,~ Jo t; c r 4 '" % A T31ST i s è COAX CONNECTOR

Contextual Info: SONY CXA1746Q Electronic Volume Description The CXA1746Q is a 2-channel electronic volume IC. A 34-bit serial data input controls the level and characteristics of the output signal. It may be used in car stereos and general audio systems. Features • Loudness

Contextual Info: Micro C en ter Jackscrew MJS Plug M olded-ln Insert - Special M JSV*P Part Number Ref. MJSV-26P* I (22.05) NIJSV-38P* 1.168 (29.67) R eceptacle (Special) M J SV *S* ’ .167 If0 O - O A o -o >- 0<T| o 1t V o - o '¡ iT - REF. T

Contextual Info: I , ,• I International IQR Rectifier P D -9 .1 5 4 4 IR G B C 2 0 S D 2 p r o v is io n a l INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack Features • Switching-loss rating includes all tail' losses • HEXFRED soft ultrafast diodes

100A 1000V thyristor

Contextual Info: 'U Silicon Protection Circuits Surface Mount Surgector Tr, Surgector Thyristors For Telecom Protection Designed to suppress lightning and other transients, Surgector suppressors are primarily intended for operation on the telephone line 'lip and ring”

Contextual Info: • 4302271 00S3T73 T31 2 H A R R IS ■ HAS IR F 450/451/452/453 IRF450R /451R /452R /4S 3R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package T O -2 0 4 A A 11A and 13A, 4SOV - 5 0 0V • r o s ( o i = 0 .4 ÎÎ an d 0 .5 f i

m5M418128

Abstract: M5M418128AJ-7
Contextual Info: MITSUBISHI LSIs M 5 M 4 1 8 1 2 8 A J - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S FAST PAGE MODE 1048576-BIT t31072-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated with a high perform ance CMOS process, and is ideal for

Contextual Info: APE1F-5M-10-2 • € Super Miniature Pushbutton Switches ^ ÜÄ/L Immersion Washable Type ■ F e atu res -1. High Reliability 1. S Î l H ' f ë Twin-contact clip mechanism is used in the contact section

HCF401068

Abstract: IC 40106 pin diagram LM 40106 TS37 IC 40106 pin HCF40106B
Contextual Info: / = 7 ^ 7# S G S -T H O M S O N M e œ iL IC T M D Ê i HCC40106B HCF40106B HEX SCHMITT TRIGGERS . SCHMITT-TRIGGER ACTION WITH NO EX­ TERNAL COMPONENTS . HYSTERESE VOLTAGE TYP. 0.9V AT VDD = 5V, 2.3V AT V dd = 10V AND 3.5V AT V dd = 15V • NOISE IMMUNITY GREATER THAN 50%

BFW93

Abstract: 2F TRANSISTOR transistor 1199
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz wideband transistor £ BFW93 PHILIPS I N T E R N A T I O N A L DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is intended for use in VHF and UHF applications, primarily wideband aerial amplifiers in the 40

2N4288

Abstract: 2N4062 2n4289 2N4248 2N4249 2N4250
Contextual Info: «MMJ This PNP Transistors Material /> £ 3 S e m ic a r K J u c lo r Lo w m L e v e l A m P |i,ie r s 2 t-H Copyrighted Type No. Case Style 2N2605 TO-46 By 2N35S0 to -ib VCE(SAT VBE(SAT) VcbO VCEO Ve BO 'CB0 VCB l»FE - lc . VCE (V) (nA)@ “ (V) (V) Min Max (mA) (V)

Contextual Info: SIEMENS BF 770A NPN Silicon RF Transistor F eature • For IF am p lifiers in T V -sa t tuners and for VC R m odulators E S D : E le ctro sta tic d isch a rg e sensitive device, o b se rve handling p recautions! T yp e ^ M arking j BF 770 A ' IS O rd erin g C o d e

BZC55

Abstract: lan hub 82C551 BZC551 P82C551
Contextual Info: / & CNIPS_ /?#: P R E L IM IN A R Y r / " STA R LA N HUB CONTROLLER 100% c o m p a tib le w ith th e S T A R L A N S pecificatio ns IE E E 80 2 .3 S up ports up to 8 nodes d o w n s tream , an d 1 upstream . U p to five co ntrollers can be cascaded on the sam e hub.

BUZ308

Abstract: DG14 mc496
Contextual Info: N AMER PH ILI PS/DIS CRET E OLE D PowerMOS transistor ~ • ^53=131 DOmflGfl A ■ BUZ308 T-31-U ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: um LT1039/LT1039-16 RS232 Driver/Receiver with Shutdown TECHNOLOGY F€ flT U R € S D C S C R IP T IO fl • Operates from ± 5V to ± 15V Supplies Th e L T 10 39 is atriple R S 2 3 2 driver/receiver which includes ■ Fu lly Protected Against Overload S H U T D O W N . Each receiver will accept up to + 3 0 V input

4279g

Abstract: G52E111 G74B111 ET-46 microtran t5115 IFS-0505 TTC05 TTC 103 2PC 502 m 8044
Contextual Info: ~tamura Product Number Index MICROTRAIM, Part No. Page Part No. Page 1 0A 006 20 3FD -348 18 Part No. 3FS -2120 Page 18 630A4201 33 A K S 25-12 39 DCM 4-PC 10A 007 20 3FD -356 18 3FS -216 18 630 A 4 3 0 4 33 A K S 25-15 39 DCM 5-PC 6 1 0A 008 20 3FD -410 18

BFY90 PHILIPS

Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation

DF 331 TRANSISTOR

Abstract: transistor df 331
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values

OA95

Abstract: Panasonic TK1
Contextual Info: PANASONIC INDL/ELEK -CIO 6932852 ~Tè PANASONIC D00b711 0 I N D L ♦E L E C T R O N I C 72C D 06711 T-41-55 MN8210W MN8210W CPD CHARGE PRIMING DEVICE Solid-State Image Sensor m f c W i & m ^ r / C F D S f f i ^ K S l i l / P i n Assignment MN8210W l i ,