JS 1200 Search Results

Contextual Info: 23/06/2014 www.crouzet.com Standstill monitor 45 mm - KSW3-JS KSW3-JS Part number 85102331 Function "Stillstand detection without sensors" Independent of rotation direction Security with redundancy and feedback circuit 3 forcibly guided "NO" security contacts

MARKING JS sot-23

Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

diode MARKING CODE jx

Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

Js MARKING CODE SOT23

Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

JS SOT23-3

Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A

BAS19LT1G

Abstract: Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available

PT14k2

Abstract: PT14b2 premo pt22b5 27b4 B1-66 PT25B6 25-K3 FT14A IEC60664-1 PT27B5
Contextual Info: _ P R E M O PT SERIES Pulse Transformers Pulse transformers designed forSemikron_ Features -Voltage-time area V d t : from 250pVs to 2Q00^Vs. -Pulse rise time (tr): from 0,8|js to 4|js . -Working voltage (Vw): From 500Vac to 3200Vac.

J514

Abstract: PTIH-10-6P
Contextual Info: Model JS Digital Pressure Gauge With Output DESCRIPTION The Model JS digital pressure test gauge with 0.2 % full scale accuracy uses transducer technology and a stainless steel diaphragm for high over pressure protection. The transducer technology provides enhanced accuracy over the entire pressure

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

C1030 transistor

Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses

Diode marking CODE 5M SOD

Abstract: sod-323 marking uf MarKING JS marking code js marking code js sod323 BAS21HT1 LBAS21HT1 47701 Diode marking CODE UF SOD marking code js 3 pin diode
Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERINGINFORMATION Device Package LBAS21HT1 SOD–323 Shipping JS 3000/Tape & Reel Preferred: devices are recommended choices for future use and best overall value.

DIODE UF marking code

Abstract: JS marking diode
Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE BAS21HT1 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERINGINFORMATION Device Package Shipping BAS21HT1 SOD–323 3000/Tape & Reel JS Preferred: devices are recommended choices for future use and best overall value.

F1000

Abstract: K131 AD 244
Contextual Info: Fast Asymmetrie-Thyristor Modules Type V V V V I V A Schnelle asymmetrische Thyristor-Module I ji2dt A A2s 10 ms, 10 ms, V dSM = VDRM [ VrrM(C tp=1 MS] T'.'j max rr r (di/dt) t (dv/dt) A/°C V mQ A/|js MS V/|js °C/W 180° el Tvi = T ,= DIN typ. DIN IEC

joystick switch

Abstract: metal detector metal detector schematic joystick circuit
Contextual Info: TACT SWITCHES SERIES JS 1200 SWITCHES NAVIGATION SWITCHES - MULTI-DIRECTIONAL 200,000 actuations in any direction X, Y, or Z Contact Resistance: 500mΩ Insulation Resistance: 100mΩ Dielectric Strength: 100 VAC Push: 0.15 ±.01mm Tilt: .20 ±.01, (3.5+5/-1°)

BAS19LT1

Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

IOR 451

Contextual Info: P D -91777 International 3BR Rectifier IRG4PH20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT V CES = 1200V • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C,

C567

Abstract: IRGTDN100M12 igbt 1000v 100a 10 khz 100A 1000V mosfet
Contextual Info: International [^Rectifier IRGTDN100M12 "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 1 0 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated Vce ON <2.5V t sc > 1 0 |JS

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250

DIODE UF marking code

Abstract: marking code js sod323 diode UF 2004
Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250

Contextual Info: ADVANCE INFORMATION VMxlXL/M All information in this data sheet is preliminary and subject to change. 225M H z, Ultra-Low -D istortion Op Am ps .Features ♦ 225MHz Unlty-Gain Bandwidth MAX4308 200MHz -3dB Bandwidth (MAX4309) ♦ 1200V/|js Slew Rate ♦ -90dBc SFDR at fc = 5MHz

BAS21HT1

Abstract: marking code js sod323 diode marking code js sod323
Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

LBAS21HT1G

Abstract: 47701
Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 Ordering Information Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G

WE VQE 24 E

Abstract: WE VQE 11 E WE VQE 24
Contextual Info: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V

Ty 8010

Contextual Info: ANALOG DEVICES 12 -Bit Successive Approximation Integrated Circuit A/D Converter AD ADC80 FEATURES True 12-Bit Operation: Max Nonlinearity ±0.012% Low Gain T.C.: ±30ppm/°C max Low Power: 800mW Fast Conversion Time: 25/js Precision 6.3V Reference for External Application