JHS 60 Search Results

CP4D

Contextual Info: SURFACE MOUNT QUADRATURE HYBRID 40-80 MHz MODEL JHS-115 Fully Hermetic Package 3 ° Maximum Phase Deviation from 90° Low Loss — 0.5 dB Maximum Guaranteed Specifications * From -5 5 ° C to +85°C Frequency Range_ 40-80 MHz

Contextual Info: COMPONENTS PRODUCT INFORMATION NEW Fine-wire Coaxial Connector For Compact Mobile Devices FI-JHS Series CONNECTOR MB-0235-1 September 2011 RoHS Compliant Along with the size minimization and slimming of small portable devices such as mobile phones, high-speed signal transmission inside these devices is increasing due to higher

Contextual Info: 1# •I SURFACE MOUNT QUADRATURE HYBRID 8 0 -1 6 0 MHz MODEL JHS-119 Fully Hermetic Package Octave Bandwidth Low VSWR — 1.3:1 Guaranteed Specifications* From - 5 5 °C to + 8 5 ° C Frequency Range Insertion Loss (Less coupling) 80-160 MHz 0.75 dB Max*

JH-136

Abstract: JHS-136
Contextual Info: Quadrature Hybrid, 175 - 350 MHz JH-/JHS-136 V 3.00 Features FP-2 JH-136 Fully Hermetic Package Octave Bandwidth Low VSWR: 1.2:1 Typical Impedance: 50 Ohms Nominal Input Power: 4 Watts Max @ +25°C, Derated to 1 Watt @ +85°C n MIL-STD-202 Screening Available

Contextual Info: 1# •I SUR F A C E MOUNT QUADRATURE H YBR ID 175-350 MHz M O DEL JHS-136 Fully Hermetic Package Octave Bandwidth Low VSWR — 1.2:1 Typical Guaranteed Specifications' From -55°C to +85°C Frequency Range_ Insertion L o ss (Less coupling)

JH-115

Abstract: JHS-115
Contextual Info: JH- / JHS-115 Surface Mount Quadrature Hybrid, 40 - 80 MHz Rev. V3 Features FP-2 JH-115 • • • • • Fully Hermetic Package 3° Maximum Phase Deviation from 90° Low Loss: 0.5 dB Max. Impedance: 50 Ohms Nominal Input Power: Watts Max. Derated to 1 Watt

SF 119 D

Abstract: 180 degree hybrid jhs 60 JH-119 JHS-119 Quadrature Hybrid 70 MHZ
Contextual Info: Quadrature Hybrid, 80 - 160 MHz JH-/JHS-119 V 3.00 Features FP-2 JH-119 Fully Hermetic Package Octave Bandwidth Low VSWR: 1.3:1 Impedance: 50 Ohms Nominal Input Power: 4 Watts Max. @ +25°C, Derated to 1 Watt @ 85°C n MIL-STD-202 Screening Available n n

Contextual Info: 4684955 I T T SEMICONDUCTORS fl7 DE|4t.fi415S D O D E B E T 0 | SCHOTTKY DIODES, BIDIRECTIONAL ZENER DIODES r - o i -o*î ' T-JhS>3 ' Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times.

JH-115

Abstract: JH115
Contextual Info: Surface Mount Quadrature Hybrid, 40 - 80 MHz JH-/JHS-115 V 3.00 Features n n n n n n n FP-2 JH-115 Fully Hermetic Package 3° Maximum Phase Deviation from 90° Low Loss: 0.5 dB Max. Impedance: 50 Ohms Nominal Input Power: Watts Max. Derated to 1 Watt @ 100°C

JH-115

Abstract: JHS-115
Contextual Info: Surface Mount Quadrature Hybrid, 40 - 80 MHz JH-/JHS-115 V3 Features FP-2 JH-115 Fully Hermetic Package 3° Maximum Phase Deviation from 90° Low Loss: 0.5 dB Max. Impedance: 50 Ohms Nominal Input Power: Watts Max. Derated to 1 Watt @ 100°C • Typical Phase Linearity: 3° from Straight Line

Contextual Info: an A M P com pany Surface Mount Quadrature Hybrid 40 - 80 MHz JHS-115 V2.00 Features • • • • • • • SF-1 Fully Hermetic Package 3° Maximum Phase Deviation from 90° Low Loss: 0.5 dB Max. Im pedance: 50 Ohms Nom. Input Power: W. Max. Derated to 1 W. @ 100°C

Contextual Info: M an A M P company Quadrature Hybrid 175-350 MHz JH-136/JHS-136 V2.00 SF-1 Features • • • Fully H erm etic Package O ctave B andw idth Low VSWR - 1.2:1 Typical 0.016 W ±0.002 0.41 ±0.5 x 0.010 T ±0.001 (0 -25 + 0 .0 3 ) OR IEN TATIO N M AR K _

180 degree hybrid

Abstract: JH-114 JHS-114 JH-133
Contextual Info: Quadrature Hybrid, 20 - 40 MHz JH-/JHS-114/JH-133 V 3.00 Features FP-2 JH-114 Octave Bandwidth 3° Maximum Phase Deviation from 90° Low Loss: 0.5 dB Max. Impedance: 50 Ohms Nominal Input Power: 5 Watts Max. @ 25°C, Derated to 1 Watt @ 100°C n Typical Phase Linearity: 3° from Straight Line

JHS-121

Abstract: JH-121
Contextual Info: Quadrature Hybrid, 100 - 200 MHz JH-/JHS-121 V 3.00 Features FP-2 JH-121 Octave Bandwidth Low VSWR: 1.2:1 Impedance: 50 Ohms Nominal Input Power: 4 Watts Max @ +25°C, Derated to 1 Watt @ +85°C n MIL-STD-202 Screening Available n n n n Description 3 dB Hybrids are ideal for dividing a signal into two signals

BT139X

Abstract: BT139X-600E
Contextual Info: Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION BT139X-600E QUICK REFERENCE DATA Passivated, sensitive gate triac in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase

BUK473

Abstract: BUK473-60A BUK473-60B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK442-60

Abstract: BUK472 BUK472-60A BUK472-60B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

600E

Abstract: BT139F-600E BT139X
Contextual Info: Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION BT139F-600E QUICK REFERENCE DATA Passivated, sensitive gate triac in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase

Contextual Info: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

transistor 1gs

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BYV29F

Abstract: BT134W BYR29 BYR29F
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYR29F series FEATURES SYMBOL QUICK REFERENCE DATA VR = 500 V/ 600 V/ 700 V / 800 V • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability

b0400

Abstract: SD6000C 0.01 k
Contextual Info: Bulletin I2035 rev. B 04/00 SD6000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 6690A Wide current range High voltage ratings up to 2400V High surge current capabilities Diffused junction Hockey Puk version Case style B-44 R-PUK Typical Applications