JEP 35 Search Results

Contextual Info: UV-Photodiode EPD-365-0/2,5 - preliminary data sheet - characteristics : ♦ ♦ ♦ ♦ GaP-Photodiode with integrated filter spectral range 1% borders 250 . 400 nm active area 4,8 mm2 substitute for JEP 5-400 applications : ♦ ♦ flame detection UV-measurements

91836

Contextual Info: SD REVISIONS CHANGES cn cn CN 23170 MA CO CN o E 03/19/82 26561 EAJ D 11/16/84 OsJ CN I o o o 33445 E JCA 05/27/92 CN K3 35618 KH D 01/09/95 CN 37805 C REDRAWN TML 04/09/99 CN 37832 C TML 05/19/99 CN 10 38101 C TML 10/23/00 5/8=24 UNEF-2 THREAD STAMP: 91836

Contextual Info: DASH NO. M CODE SD M A D E FR O M REVISIONS CN 37290 C REDRAWN PG 03/21/97 I 1.56 REF. Cn CO 10 CN 38577 E TML 05/30/02 I O -F ^ KV5904S NOTES: 1. FOR USE WITH RG-58/U CABLE GROUP. 2. FOR CABLING INSTRUCTIONS SEE C P - 1002 3. MATERIALS: INSULATOR: TEFLON, ASTM-D-4894

TM8TT64JPN8A

Abstract: TM16TT64JPN TM16TT72JPN TM8TT64JPN TM8TT72JPN TMS664814
Contextual Info: TM8TT64JPN, TM16TT64JPN TM8TT72JPN, TM16TT72JPN SYNCHRONOUS DYNAMIC RAM MODULES D D D D D D D D D Organization: – TM8TT64JPN . . . 8 388 608 x 64 Bits – TM16TT64JPN . . . 16 777 216 × 64 Bits – TM8TT72JPN . . . 8 388 608 × 72 Bits – TM16TT72JPN . . . 16 777 216 × 72 Bits

S71VS

Abstract: S71VS128RC0AHK4L S71VS128RB0 SWM064D108M1R swm032d108m1r pSRAM_39 SWM128D108M1R Chamfer Designation s71vs064rb0 S29VS064R
Contextual Info: S71VS/XS-R Memory Subsystem Solutions MirrorBit 1.8 Volt-Only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode pSRAM 256/128/64 Mb 16/8/4 Mb x 16-bit Flash, 128/64/32 Mb (8/4/2 Mb x 16-bit) pSRAM S71VS/XS-R Memory Subsystem Solutions Cover Sheet

TM4TT64KPN

Abstract: TM8TT64KPN
Contextual Info: TM4TT64KPN 4194304 BY 64-BIT TM8TT64KPN 8388608 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS699A – MARCH 1998 – REVISED AUGUST 1998 D D D D D D D D Organization – TM4TT64KPN . . . 4 194304 x 64-Bits – TM8TT64KPN . . . 8 388608 × 64 Bits Single 3.3-V Power Supply

Contextual Info: Paradigm PDM44538 32K x 18 Fast CMOS Synchronous Static RAM with Linear Burst Counter Features Description Interfaces directly with the Motorola 680x0 and PowerPC microprocessors 80,66, 60, 50 MHz The PDM44538 is a 589,824 bit synchronous random access memory organized as 32,768 x 18 bits. It has

cro circuit diagram

Abstract: RPI 1035 MC10801 alu M10800 CR02 CR321 M10800
Contextual Info: g M O T O R O L A IN T R O D U C TIO N MECL — LSI MICROPROGRAM CONTROL FUNCTION The M C10801 M icroprogram C on tro l F unction is an LSI building block fo r dig ita l processor systems. Th is c irc u it controls machine operations by generating the addresses and sequencing pattern fo r

Contextual Info: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits

TC221

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Updated boilerplate to include class N. Added case outline X. Editorial changes throughout. – TMH 98-01-27 Monica L. Poelking B Changes in accordance with NOR 5962-R043-99. 99-03-04 Monica L. Poelking

ALI chipset

Abstract: CY2283 MVP3
Contextual Info: 7^ L PRBUM¡¡MARY_ CY2283 i! i r n h b b = Pentium /!I, K6, 6x86 100-MHz Clock Synthesizer/Driver for Desktop PCs with ALI or VIA Chipsets, AGP and 3 DIMMs SDRAM outputs in place of the CY2283 and can be placed in close proximity to the SDRAM modules.

Contextual Info: TM2SN64EPH 2097152 BY 64-BIT TM4SN64EPH 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS706 - MARCH 1998 Organization: - TM2SN64EPH . 2 097 152 x 64 Bits - TM4SN64EPH . 4 194 304 x 64 Bits Single 3.3-V Power Supply ±10% Tolerance Designed for 66-MHz 4-CIock Systems

DQ8-DQ15

Abstract: MN41V4265DTT-06 panasonic ag MN41V4265DSJ-06 MN41V4265DSJ-07 MN41V4265DTT-07 PANASONIC Vu SERIES
Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh EDO Page Mode P/N: MN41V4265DSJ-06 MN41V4265DSJ-07 MN41V4265DTT-06 MN41V4265DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

HE144

Abstract: PDIP24 JEP95 tqfp128 weight MDS727
Contextual Info: ZMD-Standard November 1995 Package PDIP8 300 mil MDS 729 Supersedes Edition 01.95 Dimensions in millimetres Based on IEC 191-2N: Type 050G02 E 1 Dimensions L A1 A Seating Plane Z b1 e 0,254 M c θ 8 e1 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1

lcd dgl

Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9912_LCS2 FS9912 standard code for 3,000 counts low cost scale application. Data Sheet TD-0410016 Rev. 1.5 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to

GL02GS

Abstract: LSH 20 safety S29GL01GS 004AH
Contextual Info: S70GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S70GL02GS, 2 Gbit 256 Mbyte CMOS 3.0 Volt Core with Versatile I/O™ S70GL-S Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64

PEAK TRAY tx qfn 8x8

Abstract: asl1000 MO-220 8x8 QFN tray 8x8 JESD22 Le79Q5457
Contextual Info: Le79R70 Ringing Subscriber Line Interface Circuit VE580 Series APPLICATIONS „ „ „ „ „ „ „ „ „ „ „ Integrated Access Devices IADs ORDERING INFORMATION Device1 32-pin PLCC, No Pol. Rev. Tube Cable Modems Le79R70DJC 32-pin PLCC, No Pol. Rev.

DTMF cm8880

Contextual Info: ADVANCED PRODUCT INFORMATION ^ CALIFORNIA MICRO DEVICES CM8880/CM8880-1/CM8880-2 CMOS Integrated DTMF Transceiver General Description Features • Advanced CMOS technology for low power consumption and increased noise immunity • Complete DTMF Transmitter/Receiver

24c02 eeprom circuit diagram

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB526C164EN Series 524,288-word x 64-bit × 2-bank Synchronous Dynamic RAM Module ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is

Nippon capacitors

Contextual Info: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

LE79R79-3DJC

Abstract: Le79R79-1DJC 79R79-3QC PEAK TRAY tx qfn 8x8 MO-220 8x8 JESD22 MS-016
Contextual Info: Le79R79 A Voice Solution Ringing Subscriber Line Interface Circuit VE580 Series APPLICATIONS „ „ „ „ „ „ „ „ „ „ „ „ „ Ideal for short-loop applications Ideal for ISDN-TA and fixed radio access applications Integrated Access Devices IADs

Le79R79

Abstract: QFN tray 8x8 JESD22 LE79R100 PEAK TRAY tx qfn 8x8 jedec package MO-220 QFN-32 GR-357-CORE
Contextual Info: Le79R79 Ringing Subscriber Line Interface Circuit VE580 Series APPLICATIONS „ „ „ „ „ „ „ „ „ „ „ „ „ Ideal for short-loop applications Ideal for ISDN-TA and fixed radio access applications Integrated Access Devices IADs Network Interface Units (NIUs)

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1LFD64S 3.3 V OPERATION 1M-WORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S1 LFD64S is a 1,048,576 w ords by 64 bits dynam ic RAM module (Small Outline DIMM) on which 4 pieces of 16 M DRAM: ¿IPD42S18165L are assembled.