JEDEC-JESD22-C101 CLASS C2 Search Results

12065A104JAT2A

Abstract: 12065A103JAT2A RF Product Device Data
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 1/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • • Power Gain: 27.5 dB Typ @ f = 2450 MHz, Class AB

Contextual Info: NCP436, NCP437 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP436 and NCP437are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with PMOS

Contextual Info: NCP436, NCP437 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP436 and NCP437 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with PMOS

Contextual Info: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS

Contextual Info: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS

Contextual Info: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS

ML200M

Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

Schematics 5250

Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz

12065A104JAT2A

Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Contextual Info: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

Contextual Info: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:

STG4160

Abstract: IEC-61000-4-2 JESD22 A115-A C101
Contextual Info: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:

Contextual Info: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:

Contextual Info: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS

MRF5S9070N

Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

ATC100B2R0BT500X

Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

J1112

Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with

MRF6V10010

Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for