JEDEC MS-013 AD Search Results

MS-013

Abstract: WOMC
Contextual Info: Vishay Thin Film Molded, 50 Mil Pitch, Dual In-Line Resistor Networks, Wide Body FEATURES • Lead Pb -free available • Standard 16 and 20 Pin Counts (0.300" Wide Body) JEDEC MS-013 • Rugged, molded case construction • High stable thin film element

MS-013

Abstract: WOMC
Contextual Info: Vishay Thin Film Molded, 50 Mil Pitch, Dual In-Line Resistor Networks, Wide Body FEATURES • Lead Pb -free available • Standard 16 and 20 Pin Counts (0.300" Wide Body) JEDEC MS-013 • Rugged, molded case construction • High stable thin film element

jedec ms-013 ad

Contextual Info: Plastic Packages for Integrated Circuits Small Outline Plastic Packages SOIC M24.3 (JEDEC MS-013-AD ISSUE C) N INDEX AREA 24 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE H 0.25(0.010) M B M INCHES E SYMBOL -B1 2 3 L SEATING PLANE -A- A D h x 45° -C- e A1

MS-013

Contextual Info: WOMC Vishay Thin Film Molded, 50 mil Pitch, Dual In-Line Resistor, Wide Body, Surface Mount Network FEATURES • Standard 16 pins and 20 pins counts 0.300" wide body JEDEC MS-013 variation AA and AC • Rugged, molded case construction • High stable thin film element ratio stability

ft28c16

Abstract: 24P6
Contextual Info: Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control

2kx8 eeprom

Contextual Info: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write

28C16 atmel

Abstract: at28c16 eeprom AT28C16E at28c16 atmel 530 eeprom AT28C16
Contextual Info: Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control

2kx8 rom

Abstract: FT28C16 MIL-STD-883-M5004 FT28C16E 2kx8 EEPROM atmel
Contextual Info: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write

Contextual Info: Features • Fast Read Access Time - 70 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation

Contextual Info: Features • Fast Read Access Time -150 ns • Fast Byte Write - 200 [is or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING • Low Power

Mlx16

Abstract: Regulated Power Supply abstract MLX4/16 pdf/MLX16
Contextual Info: MLX81100 LIN Slave for FET Control Features CPU o o MelexCM CPU o Dual RISC CPU MLX4/16 – 5MIPS o 4-bit LIN protocol controller o 16-bit application CPU Internal RC-Oscillator Memories o o 2kbyte RAM, 32kbyte Flash, 128 byte EEPROM Flash for series production

Contextual Info: Features • Single 2.7V - 3.6V Supply • Fast Read Access Time - 200 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 10 ms Maximum - 1- to 64-Byte Page Write Operation

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and

ADE-203-634C

Contextual Info: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634C Z Rev, 3.0 Feb. 21, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The

5118160

Contextual Info: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM5118160 Series are CMOS dynamic RAMs organized as 1,048,576word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.

cmos series

Abstract: 51W18165
Contextual Info: HM51W16165 Series HM51W18165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-650C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS

Contextual Info: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634B Z Rev. 2.0 Dec. 5, 1996 Description The Hitachi HM5116160 Series, HM5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.

6AL7

Abstract: Nippon capacitors
Contextual Info: HB56HW465DB Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-666A Z Rev. 1.0 May. 20, 1997 Description The HB56HW465DB Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165ATT/ALTT) sealed in TSOP package and 1

660S

Contextual Info: Features ¿lmËL • Fast Read Access Time -150 ns • Fast Byte Write - 200 [is or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING

6AL7

Abstract: Nippon capacitors
Contextual Info: HB56HW465DB-A Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-829A Z Rev. 1.0 Sep. 19, 1997 Description The HB56HW465DB-A Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165A/AL) sealed in TSOP package and 1

A41N

Abstract: TIONA 595 Atmel 0541
Contextual Info: Features • Fast Read Access Time -150 ns • Fast Byte Write - 200 ps or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING - READY/BUSY Open Drain Output

Contextual Info: CS290/291 CS290/291 Ignition Controller Features Description The CS290/291 are integrated circuits to be used in the automotive ignition system. The application diagram shown below highlights the CS290. The CS291 is identical with the differential input replaced

capacitor smd 106 16K

Contextual Info: CS290/291 CS290/291 Ignition Controller Features Description The CS290/291 are integrated circuits to be used in the automotive ignition system. The application diagram shown below highlights the CS290. The CS291 is identical with the differential input replaced

Contextual Info: HB56HW465DB -5/5L/6/6L 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M x 16 components HITACHI ADE-203-861 (Z) Preliminary, Rev. 0.0 Nov. 10, 1997 Description The HB56HW465DB is a 4 M x 64 Dynamic RAM Small Outline Dual In-line M emory M odule (S. 0 .