Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JEDEC DIODE OUTLINES Search Results

    JEDEC DIODE OUTLINES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, SOD-523 Datasheet
    CEZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOD-523 Datasheet
    CEZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOD-523 Datasheet
    CEZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, SOD-523 Datasheet
    CEZ16V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, SOD-523 Datasheet

    JEDEC DIODE OUTLINES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zener diode 1N PH 48

    Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
    Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:


    OCR Scan     		BZX83 BZX97 BZX98 BZY97 BZD10 BZW22 BZV40 500mW DO-35 zener diode 1N PH 48 zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B PDF

    IRF E78996

    Abstract: IRK E78996 701819-303ac E78996 rectifier module wiring IRKT THYRISTOR THYRISTOR MODULE I27130 I27900 IRKH26 IRKL26 IRKT26 irkt 40
    Contextual Info: Bulletin I27130 rev. C 09/97 IRK.26 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly


    Original     		I27130 E78996 IRF E78996 IRK E78996 701819-303ac E78996 rectifier module wiring IRKT THYRISTOR THYRISTOR MODULE I27900 IRKH26 IRKL26 IRKT26 irkt 40 PDF

    IRK E78996 701819-303ac

    Abstract: I27900 IRKH105 IRKL105 IRKT105 IRK. Series
    Contextual Info: Bulletin I27133 rev. D 09/97 IRK.105 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly


    Original     		I27133 E78996 IRK E78996 701819-303ac I27900 IRKH105 IRKL105 IRKT105 IRK. Series PDF

    IRK E78996 701819-303ac

    Abstract: IRKT 180 I27900 IRK. Series
    Contextual Info: Bulletin I27131 rev. C 09/97 IRK.41, .56 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly


    Original     		I27131 E78996 singl10 IRK E78996 701819-303ac IRKT 180 I27900 IRK. Series PDF

    Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according


    Original     		VS-60EPS16PbF, VS-60EPS16-M3 JEDEC-JESD47 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according


    Original     		VS-60EPS16PbF, VS-60EPS16-M3 JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original     		VS-40EPS16PbF, VS-40EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-80APS16PbF, VS-80APS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    irf 1740

    Abstract: IRK E78996 701819-303ac IRF E78996 I27900 irkt 350 IRKT THYRISTOR THYRISTOR MODULE irkt 40 IRK. Series
    Contextual Info: Bulletin I27132 rev. D 09/97 IRK.71, .91 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly


    Original     		I27132 E78996 irf 1740 IRK E78996 701819-303ac IRF E78996 I27900 irkt 350 IRKT THYRISTOR THYRISTOR MODULE irkt 40 IRK. Series PDF

    I27900

    Abstract: I27132
    Contextual Info: Bulletin I27132 rev. D 09/97 IRK.71, .91 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly


    Original     		I27132 E78996 I27900 PDF

    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-80APS16PbF, VS-80APS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-80APS16PbF, VS-80APS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original     		VS-40EPS16PbF, VS-40EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    JEDEC-JESD47

    Abstract: 80aps16
    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified


    Original     		VS-80APS16PbF, VS-80APS16-M3 JEDEC-JESD47 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 80aps16 PDF

    vs20ets16pbf

    Contextual Info: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop Base cathode 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified according


    Original     		VS-20ETS16PbF, VS-20ETS16-M3 JEDEC-JESD47 2002/95/EC O-220AC O-220AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. vs20ets16pbf PDF

    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified


    Original     		VS-80APS16PbF, VS-80APS16-M3 JEDEC-JESD47 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-80APS16PbF, VS-80APS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    VS-10ETS08

    Abstract: VS-10ETS12 PBF VS-10ETS
    Contextual Info: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		VS-10ETS. JEDEC-JESD47 2002/95/EC O-220AC O-220AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-10ETS08 VS-10ETS12 PBF VS-10ETS PDF

    Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES • Very low forward voltage drop Base cathode • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-60EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		VS-60EPS. JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES • Very low forward voltage drop Base cathode • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47


    Original     		VS-60EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		VS-10ETS. JEDEC-JESD47 O-220AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2


    Original     		VS-60EPS16PbF, VS-60EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		VS-10ETS. JEDEC-JESD47 O-220AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF