JC-11.3 ITEM 67 Search Results

Contextual Info: LED HIGH POWER C08 Product Series LED HIGH POWER C08 C08 Product Product Series Series Data Data Sheet Sheet Created CreatedDate: Date:03 03//08 08//2013 2013 Revision: Revision:1.4, 1.3,05 03//08 15//2013 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008

A8-5A-F

Contextual Info: J A E ELECTRONICS INC 21E D DQ0GM35 T EMI SHIELDING TYPE - D SUB T ' TYPE m SOLDER TERMINATION D*-F»N TYPE A -/7 -0 3 A '/7-0£ / / - / / 2-fS0.120±0.00S 3.05+0.13 o.3i5max. (N o te D (8 .0 ) (N ote 1 ) The connector basically, Is the same as the standard type D*-N (with stamped

qml-38535

Abstract: QML-38534
Contextual Info: NOTICE OF REVISION NOR THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (YYMMDD) 99-04-09 Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the

Contextual Info: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.

CMF 65 1001 F T-1

Abstract: 0005Ohm CMF 1.62 CMF65 1001 F T-1
Contextual Info: A COMPANY OF MODEL CMF M etal Film Resistors Industrial FEATURES • Small size - conformai coated • Flame retardant epoxy coating • Controlled temperature coefficient • Excellent high frequency characteristics • Low noise • Low voltage coefficient

BLF7G10L-250

Abstract: BLF7G10
Contextual Info: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 1 — 25 February 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

DAUF-15S-FO

Contextual Info: J A E ELECTRONICS INC EIE D • GQOG4Ü1 T ■ /^-/7"03 D*U CRIMP TERMINATION TYPE D*U Standard shell Socket side Pin side 0 .3 9 4 0 .3 9 4 10 0 .2 3 6 (6 .0 ) (10) 0 .2 4 0 (6 . 1) 0.421±0.031 (JO.7±0.8)j" 0 . 4 2 5 ± 0 . 0 3 l - _ ( )0.8+0.8)} Dimensions after mating

Contextual Info: LED HIGH POWER P05 Product Series LED HIGH POWER P05 Product Series Data Sheet Created Date: 03 / 13 / 2013 Revision: 1.4, 06 / 17 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER P05 Product Series 1. Description

54HCT138

Abstract: marking code V3.V
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION A Convert to m ilit a r y drawing form at. Add vendor CAGE 01295 f o r d e vice types 01 EX, 012X and 01FX. 87 APR 15 B Change drawing CAGE code to 67268. Add vendor CAGE 27014 f o r d e vice type 01EX. Add fo o tn o te 2/ to ta b le I. E d it o r ia l

Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF7G15L-200

Abstract: RO4350 properties 800B RO4350 BLF7G15LS-200
Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

RO4350 properties

Abstract: RO4350 BLF7G15L-200 800B 15085
Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

SP06Q002-TZA

Abstract: Hitachi Scans-001 JIS-K5400
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 ( 7LINE) FAX:(07) 8215815 FOR MESSRS : DATE : May.07.2004 CUSTOMER'S ACCEPTANCE SPECIFICATIONS SP06Q002-TZA CONTENTS No SHEET No.

J3L SMD DIODE

Abstract: 5962-87556012X 5962-8755601RX smd IQO 54ACT373 54ACT373DMQB SMD marking code iqo 54ACT373FMQB
Contextual Info: n REVISIONS LTR DOTE YR-MO-OA DESCRIPTION Add device type 02. Add vendor CAGE 01295. Add case o utlines L and 3. Change drawing CAGE code to 67268. Technical changes in 1 .4 , tab le I , and fig u re 3. E d ito ria l changes throughout._ _ _

panasonic minas

Abstract: DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder
Contextual Info: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01

DCMA-37S

Abstract: DCMA-37P DDMA50S DAMA-15S dbma-25s JIS-C-6367 DDMA-50S l0808
Contextual Info: J A E ELECTRONICS INC 40=134^5 G0Q0404 21E D s m -il-0 3 CRIMP CONTACT TYPE D'M A TYPE D*MA Type Crimp Contact Type D *M A -S ta n d a rd Shell D * M A F -S h e ll w ith F lo at M ounts S o c k e t insert 0 .3 9 4 10 0 .2 4 0 <6.o r ~*^(l0.8+0.8)r,— 0 .4 2 5 ± 0 .0 3 l

GE2 TRANSISTOR

Abstract: MIL-BUL-103 qml-38535 AD603 military BJT100
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 2 3 4 PREPARED BY RICK C. OFFICER

Contextual Info: +6 2  BGA3023 1.2 GHz 20 dB gain CATV amplifier Rev. 2 — 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3023 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier MPA , specifically designed as an output stage for high linearity CATV

Contextual Info: J A E ELECTRONICS INC aiE D '4fil34fc.S' 0000 434 3 I M F SHIELDING TYPE-D SUB "F” TYPE I DC TERMINATION D*SP “F” TYPE A - ¿ S '- < 2 7 The sheath on the flat ribbon cables does not have to be removed since insu­ lation displacement connectors are SelfPiercing. All conductors are terminated

transistor d400 e 1b

Abstract: SOT1211-1 J1889 j2976 nxp power microwave transistor C403 3RD IF
Contextual Info: BLM7G22S-60PB; BLM7G22S-60PBG LDMOS 2-stage power MMIC Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description The BLM7G22S-60PB G is a dual path, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the

ADC1210S

Contextual Info: ADC1210S series Single 12-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps; CMOS or LVDS DDR digital outputs Rev. 2 — 23 December 2010 Product data sheet 1. General description The ADC1210S is a single-channel 12-bit Analog-to-Digital Converter ADC optimized for

HVQFN40

Abstract: ADC1210S125 ADC1210S ADC1210 ADC1210S080HN ADC1010S ADC1410S ADT1-1WT 005aaa073
Contextual Info: ADC1210S series Single 12-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps; CMOS or LVDS DDR digital outputs Rev. 2 — 23 December 2010 Product data sheet 1. General description The ADC1210S is a single-channel 12-bit Analog-to-Digital Converter ADC optimized for

Contextual Info: ADC1215S series Single 12-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps with input buffer; CMOS or LVDS DDR digital outputs Rev. 2 — 13 January 2011 Product data sheet 1. General description The ADC1215S is a single channel 12-bit Analog-to-Digital Converter ADC optimized for