JC EG Search Results

8096 MICROCONTROLLER ADDRESSING MODES

Abstract: 270646 intel Automotive
Contextual Info: in le l 809X JC/839X JC/879X JC ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Automotive —40°C to + 125°C Case Dedicated Baud Rate Generator 232 Bytes of On-Chip Register RAM High Speed I/O Subsystem 128 Byte External RAM On-Chip Full Duplex Serial Port

Contextual Info: :8/188 =;>;3CDA7 :;9: @?F7A A7<3H 8NJZ[XNY c mlz QUGRAFGLE A?N?@GJGRW c qI: BGCJCARPGA QRPCLERF e@CRUCCL AMGJ ?LB AMLR?ARQf c 7MAICRQ ?T?GJ?@JC c 4J?QRGA QC?JCB ?LB BSQR NPMRCARCB RWNCQ ?T?GJ?@JC c 90 GLQSJ?RGML QWQRCKv |J?QQ * ?T?GJ?@JC c ~LTGPMLKCLR?J DPGCLBJW NPMBSAR e6M,7 AMKNJG?LRf

tm 41f 055 transformer

Abstract: scr arc welding control schematic smd diode 748 36A PCB Mounted 3.5mm Stereo Socket chassis LR26550 SCR Gate Drive 200v dc motor Matsushita Miniature Relay s2 48v jc relay photo diode tk 69
Contextual Info: JC COMPACT POWER RELAYS JC-RELAYS UL File No.: E43028 CSA File No.: LR26550 19.0 .748 30.4 1.197 mm inch • High inrush current capability 1 Form A: 163 A inrush TV-8 2 Form A: 111 A inrush (TV-5) • High dielectric withstanding for transient protection:

tqfp128 weight

Abstract: RS232-Connector C161 C161CS J1850 JP13
Contextual Info: kitCON-161CS/JC/JI Hardware-Manual Edition December 1999 A product of a PHYTEC Technology Holding company kitCON-161CS/JC/JI In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a

BA9K

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LG VARIABLE FREQUENCY DRIVE is3

Abstract: ADZ8
Contextual Info: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features ga Pin/Code Compatible with all 80960Jx Processors a High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS Ix the Bus Clock

Contextual Info: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features • Pin/Code Compatible with all 80960Jx Processors ■ High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS lx the Bus Clock

T41C

Abstract: T41C-4M
Contextual Info: PRELIMINARY H/rT4LC4M4Gtff S M BK jc* BURST EDO DRAWT BURST EDO DRAM FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: life Integrated D e v jc e T ech n ology, i i c . 3.3V CMOS 1-BITTO 4-BIT IDT74ALVCH16832 ADDRESS REGISTER/DRIVER ADVANCE INFORMATION WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps

85E17

Contextual Info: Le79R101 Ringing Subscriber Line Interface Circuit VE580 Series Integrated Access Device IAD Smart Residential Gateway (SRG) Set Top/House Side Box Network Interface Unit (NIU) Cable Modem Device Pkg. Options Pol. JC -1 Fiber in the Loop (FITL) Fiber to the Home (FTTH)

Contextual Info: FZ 800 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1600 V 800 A lc Thermal properties R th JC DC, pro Baustein / per module 0,020 °C/W R th C K pro Baustein / per module

100az

Abstract: 34032T7
Contextual Info: F 15 A 12 GF Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften R th jc DC H öchstzulässiqe W erte V cE S Maximum rated values 1200 V V Ecs 5 V 15 A 30 A 150 W VGe 20 V V eg 20 V Therm al properties 0,83 150 - 4 0 / + 150 - 4 0 / + 125

Contextual Info: FZ 500 R 12 KL Transistor Transistor Therm ische Eigenschaften Therm al properties R th jc DC, pro B a u ste in /p e r module 0,042 °C/W Elektrische Eigenschaften Electrical properties pro Baustein / per module 0,03 °C/W Maximum rated values VcES 1200 V

14572

Abstract: DG66S 22-10AWG
Contextual Info: A Product Specification DEGSON ELECTRONICS CO., LTD. DEGSON Materials Ad"* C £ Housing: PA66.UL94V-0 B rass,0.8t,Tin-P lated Steel,M 4 Ni-Plated Terminal: Screw: ? í i j « Capability .t I JC —- Rated: Temp.Range: W ithstand Voltage: -<L Insulation Resistance:

Contextual Info: FF 150 R 06 KL 2 Transistor Thermische Eigenschaften Transistor R th jc Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values R th C K VcES 600 V lc 150 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

JC0-0351

Abstract: JCO-0351NL-1
Contextual Info: I JC 0 -03 51N L NOTICE: THE INFORMATION AND DESIGN CONTAINED HEREIN IS THE PROPERTY OF PULSE WHO RESERVES ALL RIGHTS THERETO. D NOTES: UNLESS OTHERWISE SPECIFIED 1. THIS COMPONENT CONFORMS TO UL60950. D UL FILE NO. IS: E216117. WARNING: THIS COMPONENT IS RECOGNIZED BY ONE OR

D125BP

Abstract: D125 D125AP
Contextual Info: y y JC 9 siiico n ix in corporated D125 Monolithic 6-Channel FET Switch Drivers FEATURES BENEFITS APPLICATIONS • TTL C om patible • Reduces System C om ponent Requirem ents • Interfacing Low Level Logic to MOSFETs o r JFETs • DC Level Shifting to > 19 V

JCO-1011NL-1

Contextual Info: I JC 0 -10 11N L NOTICE: THE INFORMATION AND DESIGN CONTAINED HEREIN IS THE PROPERTY OF PULSE WHO RESERVES ALL RIGHTS THERETO. D NOTES: UNLESS OTHERWISE SPECIFIED 1. THIS COMPONENT CONFORMS TO UL60950. D UL FILE NO. IS: E216117. WARNING: THIS COMPONENT IS RECOGNIZED BY ONE OR

Texas Instruments TTL

Abstract: texas instruments DTL logic TMS3112JC TMS3112 dallas 32 pin TMS 300 dtl ttl logic 3112
Contextual Info: TMS 3112 JC, TMS 3112 NC HEX 32-BIT STATIC SHIFT REGISTER MOS LSI featu es Single clock T T L levels D T L/TTL compatible DC to 1 MHz Static operation Loading and recirculating control logic Gated-output control logic Dual-in-line package Single-ended (open drain) buffer

Contextual Info: 7=3 4’ 3 FF 75 R 06 KF EUPEC S5E 34035^7 Rth jc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! / MUREC Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Pro Baustein /p e r module

Contextual Info: 13 12 10 DIM 'C' REF.- DIM 'C1 - 7.MO DIM JC’ - .291 JE* R E F.- B — H -H - B - H - B — H - H - B — H - H | 4ppp CIRCUIT A1 IDENTIFIER INVERTED APPLICATION P . X3|0U1 NOTES: 1 MATERIALS: HOUSING - LIQUID CRYSTAL POLYMER. UL94 V -0

L50Q

Contextual Info: F 15 A 06 GF Elektrische Eigenschaften Thermische Eigenschaften Electrical properties R th jc Höchstzulässiqe Werte V c es V ecs Maximum rated values 600 V 5 V 15 A 30 A 100 W Thermal properties 1,25 DC 150 °C - 4 0 / + 150 °C - 40 / + 125 °C tv j m ax

N458

Abstract: 8e89 C887 6ba9 G4EG 74G4 HC74G 0WQ1 A68g
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