JB MARKING Search Results

JB marking

Abstract: marking jb transistor marking JB KRA722U
Contextual Info: SEMICONDUCTOR KRA722U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JB KRA722U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking JB

Abstract: JB marking transistor marking JB KRA722E
Contextual Info: SEMICONDUCTOR KRA722E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JB KRA722E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode SG40TC12M diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

Contextual Info: Toggles Series JB Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Other Ratings Programmable Illuminated PB Standard Operating Force Contact Resistance: Insulation Resistance: Dielectric Strength: Mechanical Life:

Contextual Info: Toggles Series JB Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Programmable Illuminated PB Other Ratings Standard Operating Force 50 milliohms maximum 50 milliohms maximum 500 megohms minimum @ 250V DC 500 megohms minimum @ 250V DC

Contextual Info: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB xtxcK xcon M em ory Back-U p Use • Developed for memory back-up, with load life of 1000 hours at + 85"C . • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

TACTILE SWITCH SPST FLAT BUTTON

Abstract: JB Series transistor Bc 287 TACTILE SWITCH SPST FLAT matrix led schematic
Contextual Info: Series JB Low Profile Process Sealed Tactiles Distinctive Characteristics Choice of dimensions from PCB to top of cap adds to design flexibility. Bright, full-face illumination with red, green, or yellow LEDs for attractive, functional panel layouts. Higher operating force type provides more pronounced

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

TI43A

Contextual Info: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •

0.1 MF RADIAL CAPACITOR

Abstract: nichicon jb series Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Changes in accordance with NOR 5962-R141-96. - jb B Update drawing to meet current MIL-PRF-38535 requirements. glg. APPROVED 96-06-28 Michael A. Frye 13-04-18 Charles F. Saffle REV SHEET REV B SHEET 15 REV STATUS

Contextual Info: DRWD BY SIGN Ca CHK'D BY T IT L E SIGN KN APP'D BY SIGN JB DESIGN DIMENSION Male connector I0SU Dimensions Technical Data PS-851*1•*-0005 MOLEX EUROPE SCALE EQUIVALENT DIMENSION 8 7 s _ ?_ I0F2 91/08/01 DWG NO. TIC C6SIOI 01106KM.10KB IS SECPOWT

Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Updated boilerplate. Added flat package - glg 94-08-31 M. A. Frye B Changes in accordance with NOR 5962-R054-95. - glg 95-01-30 Michael A. Frye C Changes in accordance with NOR 5962-R172-95. - jb 95-08-22 Michael A. Frye

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Changes in accordance with NOR 5962-R142-96. - jb B Update drawing to meet current MIL-PRF-38535 requirements. glg. APPROVED 96-06-10 Michael A. Frye 13-04-12 Charles F. Saffle REV SHEET REV B B SHEET 15 16 REV STATUS

AN-A006

Contextual Info: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications

Beckman resistor network

Abstract: Beckman RESISTOR NETWORKS Beckman Industrial BECKMAN 332 Beckman Industrial RESISTOR NETWORK Beckman Industrial 330 Beckman ser 3615 A 473 G hbic
Contextual Info: BECKMAN INDSTL/ ELEC TECH 44E MM 1 3 3 b b l D D DOOB' l Jb 7 «BIC TkZ-OS f Model L-Series Single In-Line Low Profile Conformal Thick Film Resistor Netw ork 71 / / Electrical S tandard Resistance Range, Ohm s 22 to 1Meg Standard Resistance Tolerance, at 25°C

JB TRANSISTOR SMD MARKING CODE

Abstract: LA 4262 smd transistor marking FJ B235t TLE4262G 4262 G marking 53d AEB01081 AED01087 AED01088
Contextual Info: • û 235bos □ o 'jb s n ?ai SIEM EN S 5-V Low-Drop Voltage Regulator TLE 4262 G B ipolar 1C P relim inary Data Features • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection