JB MARKING Search Results

JB marking

Abstract: marking jb transistor marking JB KRA722U
Contextual Info: SEMICONDUCTOR KRA722U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JB KRA722U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking JB

Abstract: JB marking transistor marking JB KRA722E
Contextual Info: SEMICONDUCTOR KRA722E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JB KRA722E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: 3 4 6 2-1,5-4 ON POS. 3 n1.85 [.073] RELEASED FOR PRODUCTION 15063 14968 PCR NO B A REV JB 6/1/05 BY JB 7/11/05 DATE BGL 12/21/10 SCALE TITLE .76 [.030 in] E-SWITCH MARKING ON OPPOSITE SIDE 8.89 [.350 in] 100DP3T1B9M2QE T106003 1 5.72 [.225 in] 11.43 [.450 in]

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode SG40TC12M diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

Contextual Info: Toggles Series JB Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Other Ratings Programmable Illuminated PB Standard Operating Force Contact Resistance: Insulation Resistance: Dielectric Strength: Mechanical Life:

AT4060

Contextual Info: Toggles Series JB Illuminated Low Profile Process Sealed Tactiles Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Other Ratings Programmable Illuminated PB Standard Operating Force Contact Resistance: Insulation Resistance:

BAR74

Contextual Info: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Q62702-A615

Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Contextual Info: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage

Contextual Info: Toggles Series JB Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Programmable Illuminated PB Other Ratings Standard Operating Force 50 milliohms maximum 50 milliohms maximum 500 megohms minimum @ 250V DC 500 megohms minimum @ 250V DC

Contextual Info: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23

Contextual Info: XR-T66100 JB T E X A R Preliminary Information Caller I.D. Receiver IC GENERAL DESCRIPTION PIN ASSIGNMENT The XR-T66100 is a single-chip CMOS receiver IC designed to work in subscriber telephone equipment incorporating Calling Number Delivery CND capa­

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Mem ory Back-Up Use series • Developed for memory back-up, with load life of 1000 hours at +85°C. • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB xtxcK xcon M em ory Back-U p Use • Developed for memory back-up, with load life of 1000 hours at + 85"C . • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

TACTILE SWITCH SPST FLAT BUTTON

Abstract: JB Series transistor Bc 287 TACTILE SWITCH SPST FLAT matrix led schematic
Contextual Info: Series JB Low Profile Process Sealed Tactiles Distinctive Characteristics Choice of dimensions from PCB to top of cap adds to design flexibility. Bright, full-face illumination with red, green, or yellow LEDs for attractive, functional panel layouts. Higher operating force type provides more pronounced

Clear dome diffuser

Abstract: JB15HL AT4060
Contextual Info: Series JB Low Profile Process Sealed Tactiles Distinctive Characteristics Choice of dimensions from PCB to top of cap adds to design flexibility. Bright, full-face illumination with red, green, or yellow LEDs for attractive, functional panel layouts. Higher operating force type provides more pronounced

LB 122"blue led"

Abstract: "Super Bright Leds" AT4166 E44145 Super Bright Leds marking 291 e4414
Contextual Info: Series HB Subminiature Pushbutton Switches TYPICAL SWITCH ORDERING EXAMPLE HB 1 5 S K W01 6G JB POLE 1 SPDT HOUSING K Black only CIRCUITS 5 ON (ON CONTACTS & TERMINALS ) = Momentary 6 ON ON Alternate Action with Latchdown Silver Contacts and W01 Solder Lug Terminals

electrolytic capacitor vent type

Abstract: of 1000 mf capacitor 1000 mf capacitor electrolytic 35v Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: •Better voltage maintenance. •Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance. • Speedier charge-up available due to low impedance feature.

AN 5522

Abstract: capacitor 10mf 35v 1000 mf capacitor 35v
Contextual Info: n ic H ic o n ALUMINUM ELECTROLYTIC CAPACITORS JB M em ory Back-U p Use • Developed for memory back-up, with load life of 1000 hours at + 85°C . • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Memory Back-Up Use series Developed for memory back-up, with load life of 1000 hours at +85°C. Superior to electric double layer type capacitors in the following characteristics: •Better voltage maintenance. •Speedier charge-up available due to low impedance feature.

TI43A

Contextual Info: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •