JA BJT Search Results

Contextual Info: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW S T A R T -U P C U R R E N T < 1 40|jA

Contextual Info: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PR O D U C T PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW S T A R T -U P C U R R E N T < 1 50|jA

Logic Level Gate Drive mosfet

Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
Contextual Info: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

12V 10A BJT

Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

sot-23-6 pwm controller

Abstract: rt9052 sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information
Contextual Info: RT9052 Single Channel LED Current Source Controller General Description Features The RT9052 is a low cost, single channel LED current source controller with a specific FAULT detector. The part can drive an external NPN-BJT for various applications. The RT9052 is operated with Vcc power ranging from 3.8V

Contextual Info: 1 6 5 7 A B P.C.B LAYOUT BOTTOM VIEW C 3 PINs 4 PINs 5 PINs 3264-1-3 3264-1-4 3264-1-5 NO. OF PINs 6 PINs 7 PINs 8 PINs 3264-1-6 3264-1-7 3264-1-8 m PH 45- WJ BJt LEA PROJ SCALE • # -6 3 - DO NO T ’iRiDSE © ., LED. : SCALE F DGN DRW CCJ AMY SHIEH

RT6030

Abstract: ICC12
Contextual Info: RT6030 4-CH LED Current Source Controller General Description Features The RT6030 is a current source controller, capable of driving up to 4-CH of LEDs . The part can also be used to drive an external BJT or N-MOSFET for various applications. With a wide operating voltage range from 3.8V to 13.5V,

IXAN0061

Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
Contextual Info: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and

Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package

tl620

Abstract: cl1100
Contextual Info: RF RF2152 MICRO DEVICES DUAL-MODE CDMA/AMPS 3 V POWER A M PLIFIER T y p ic a l A p p lic a tio n s Spread Spectrum Systems • 3 V JCDMA/TACS Cellular Handsets CDPD Portable Data Cards • 3V TDMA/AMPS Cellular Handsets Portable Battery-Powered Equipment POWER AMPLIFIERS

Drive Base BJT

Abstract: vertical pnp bjt Semiconductor Group igbt the calculation of the power dissipation for the IGBT
Contextual Info: APPLICATION NOTE AN INTRODUCTION TO IGBTS by M. Melito, A. Galluzzo INTRODUCTION In the low and medium power range, Bipolar Junction Transistors BJTs have up to now been the most commonly used power semiconductors, and they still hold a large part of

BiCmos

Abstract: RF2137
Contextual Info: RF* RF2137 Preliminary M ICRO-DEVICES LINEAR POWER AMPLIFIER T y p ic a l A p p lic a tio n s • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment P ro d u c t D e s c rip tio n

Contextual Info: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The RF2137 is a high power, high efficiency linear ampli­

Contextual Info: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The R F2137 is a high power, high efficie n cy linear a m p li­

Contextual Info: RFH RF2132 LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 A M P L IF IE R S • 4.8V JCDMA/TACS Handsets

GM6486

Abstract: driver for 7 segment Led indicator
Contextual Info: GM6486 33 OUTPUT LED DRIVER. Pin Configunation General Description The GM6486 is a monolithic MOS integrated cir­ cuit produced with high voltage CMOS technology. It is available in a 40-pin dual in-line plastic package. A single pin controls the LED display

A 3120 opto

Abstract: A 3120 opto coupler HPCL 3120 narrow body SOIC 8 pcb pattern AVAGO MARKING E4 IGBT driver hcpl3120 HPCL0302 SI8221CC-A-IS HPCL3120 HPCL-0302
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I V E R S W I T H O PT O I N P U T 2.5, 3.75, AND 5.0 KVRMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)

HPCL 3120

Abstract: a 3120 opto hpcl3120 SOIC127P1032X265-16AN HPCL-3120 HPCL-0302 hpcl inverter A 3120 opto coupler mosfet igbt drivers theory TLP350
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  50 ns propagation delay (independent of input drive current)

HPCL-3120

Abstract: HPCL3120 A 3120 opto HPCL 3120 SOIC127P1032X265-16AN 3120 8 pin optocoupler A 3120 opto coupler opto cross reference avago si8220bb-a-is 60601-1
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)