JA BJT Search Results

Contextual Info: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW S T A R T -U P C U R R E N T < 1 40|jA

Contextual Info: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PR O D U C T PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW S T A R T -U P C U R R E N T < 1 50|jA

Contextual Info: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

12V 10A BJT

Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

sot-23-6 pwm controller

Abstract: rt9052 sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information
Contextual Info: RT9052 Single Channel LED Current Source Controller General Description Features The RT9052 is a low cost, single channel LED current source controller with a specific FAULT detector. The part can drive an external NPN-BJT for various applications. The RT9052 is operated with Vcc power ranging from 3.8V

Contextual Info: 1 6 5 7 A B P.C.B LAYOUT BOTTOM VIEW C 3 PINs 4 PINs 5 PINs 3264-1-3 3264-1-4 3264-1-5 NO. OF PINs 6 PINs 7 PINs 8 PINs 3264-1-6 3264-1-7 3264-1-8 m PH 45- WJ BJt LEA PROJ SCALE • # -6 3 - DO NO T ’iRiDSE © ., LED. : SCALE F DGN DRW CCJ AMY SHIEH

RT6030

Abstract: ICC12
Contextual Info: RT6030 4-CH LED Current Source Controller General Description Features The RT6030 is a current source controller, capable of driving up to 4-CH of LEDs . The part can also be used to drive an external BJT or N-MOSFET for various applications. With a wide operating voltage range from 3.8V to 13.5V,

IXAN0061

Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
Contextual Info: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and

Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package

NJL5165KL

Contextual Info: NJL5165KL Ej r c I # j È ' mm NJL5165KL» , ¡ ^ t t J ^ i O T S S ^ L E D f c ¡ S ! i J f <7 SI 7 a V V7 S C i S a i S I + O T U- > Zittii% 'BJtÉi: L f : ' M 7 i > y ^ i T - f tiB S iC : H t t h U 7 U i ’ ? -T"to m • 2 M t4 .0 m m X 5 .0 m m X 5 .0 m m )

BiCmos

Abstract: RF2137
Contextual Info: RF* RF2137 Preliminary M ICRO-DEVICES LINEAR POWER AMPLIFIER T y p ic a l A p p lic a tio n s • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment P ro d u c t D e s c rip tio n

Contextual Info: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The RF2137 is a high power, high efficiency linear ampli­

Contextual Info: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The R F2137 is a high power, high efficie n cy linear a m p li­

Contextual Info: RFH RF2132 LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 A M P L IF IE R S • 4.8V JCDMA/TACS Handsets

GM6486

Abstract: driver for 7 segment Led indicator
Contextual Info: GM6486 33 OUTPUT LED DRIVER. Pin Configunation General Description The GM6486 is a monolithic MOS integrated cir­ cuit produced with high voltage CMOS technology. It is available in a 40-pin dual in-line plastic package. A single pin controls the LED display

HPCL 3120

Abstract: a 3120 opto hpcl3120 SOIC127P1032X265-16AN HPCL-3120 HPCL-0302 hpcl inverter A 3120 opto coupler mosfet igbt drivers theory TLP350
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  50 ns propagation delay (independent of input drive current)

HPCL-3120

Abstract: HPCL3120 A 3120 opto HPCL 3120 SOIC127P1032X265-16AN 3120 8 pin optocoupler A 3120 opto coupler opto cross reference avago si8220bb-a-is 60601-1
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)

A 3120 opto

Abstract: opto cross reference avago hcpl 0302 igbt driver HCPL3120
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)

Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)

A 3120 opto

Abstract: HPCL 3120 AVAGO MARKING E4 opto A 3120 Hpcl hpcl inverter si8220 HPCL3120 3120 opto TOSHIBA IGBT DATA BOOK
Contextual Info: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features  Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers  60 ns propagation delay max (independent of input drive current)