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2SC3019 Abstract: 4D6T T02E Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V	OCR Scan	2SC3019 520MHz, j56i2 2SC3019 100mW 100pF, 560pF, 4D6T T02E	PDF

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2SC3019

Abstract: 4D6T T02E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V

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2SC3019 520MHz, j56i2 2SC3019 100mW 100pF, 560pF, 4D6T T02E

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