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    J3076 TRANSISTOR Search Results

    J3076 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    J3076 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    j3076

    Abstract: j3076 transistor FJD3076 305 marking d-pack FJD3076TM
    Contextual Info: FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage


    Original     		FJD3076 FJD3076 O-252 FJD3076TF FJD3076TM j3076 j3076 transistor 305 marking d-pack PDF