J250 100 Search Results

J250 100 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
OPA336NJ/250		Texas Instruments	Single-Supply, MicroPower CMOS Operational Amplifiers MicroAmplifier™ Series 5-SOT-23 -40 to 85

J250 100 Price and Stock

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Walsin Technology Corporation


Walsin Technology Corporation 0402N100J250CT Multilayer Ceramic Capacitors MLCC - SMD/SMT 25 V 10 pF 5% C0G (NP0) 0402 - 55 C + 125 C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	0402N100J250CT		71,097			1 $0.10 10 $0.01 100 $0.01 1000 $0.00 10000 $0.00	Buy Now
Walsin Technology Corporation 0201N100J250CT Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF +-5% 25V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	0201N100J250CT		29,896			1 $0.10 10 $0.01 100 $0.01 1000 $0.00 10000 $0.00	Buy Now
Walsin Technology Corporation 0805N100J250CT Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF, +-5%, 25V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	0805N100J250CT		13,795			1 $0.12 10 $0.03 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Walsin Technology Corporation RF03N100J250CT Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF +-5% 25V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RF03N100J250CT		6,115			1 $0.11 10 $0.03 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Walsin Technology Corporation RF15N100J250CT Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF 5% 25V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RF15N100J250CT		3,266			1 $0.12 10 $0.06 100 $0.04 1000 $0.03 10000 $0.02	Buy Now

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J250 100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J943-4554 Abstract: e78996 india E78996 rectifier module IR E78996 IRFK6H250 u114 IRFK6J250 J9-43 Contextual Info: Bulletin E 2 7111 International Ii ÔrIRectifier IRFK6H250,1RFK6 J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isola ted B ase Plate. E asy A ssem b ly into E quipm ent.	OCR Scan	E27111 IRFK6H250 IRFK6J250 E78996. T0-240 S-162 CH-6032 IL60067. NJ07650. J943-4554. J943-4554 e78996 india E78996 rectifier module IR E78996 u114 IRFK6J250 J9-43	PDF
2SC3268 Abstract: EIAJ C-3 Contextual Info: TOSHIBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. NF = 1.7dB, \|S2iel2= 15.0dB f = 500MHz NF = 2dB, \|S2iel2= 9.5dB (f = 1000MHz) 1.6MAX. Q4±a05. 4.6 M A X . 1.7 MAX.	OCR Scan	2SC3268 500MHz) 1000MHz) 250mm2 -j250 -jl50 2SC3268 EIAJ C-3	PDF
Contextual Info: Ordering number : ENA1090A 2SC5374A RF Transistor 10V, 100mA, fT=5.2GHz, NPN Single SMCP http://onsemi.com Features • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C	Original	ENA1090A 2SC5374A 100mA, S21e2 A1090-8/8	PDF
KTC3770S Contextual Info: SEMICONDUCTOR KTC3770S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure, High Gain. NF=1.1dB, \|S21e\| =11dB f=1GHz . D 2 H ) RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3770S -j250 -j150 -j100 KTC3770S	PDF
0.1 j100 Contextual Info: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, \|S21e\| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3770U -j250 -j150 -j100 -j100 0.1 j100	PDF
KTC3605U Contextual Info: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.	Original	KTC3605U -j250 -j150 -j100 KTC3605U	PDF
KTC3605T Contextual Info: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, \|S21e\| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.	Original	KTC3605T -j250 -j150 -j100 KTC3605T	PDF
J250 Abstract: KTC3790U j50 transistor J-150 transistor j50 Contextual Info: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, \|S21e\| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3790U -j250 -j150 -j100 J250 KTC3790U j50 transistor J-150 transistor j50	PDF
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES ・Low Noise Figure, High Gain. E B L L ・NF=1.2dB, \|S21e\| =13dB f=1GHz . D 2 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT	Original	KTC3790S 1-j150 -j100 -j250 -j150 -j100 -j150	PDF
Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770V -j250 -j150 -j100	PDF
KTC3770V Abstract: transistor j50 marking s22 Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770V -j250 -j150 -j100 KTC3770V transistor j50 marking s22	PDF
Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, \|S21e\|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770F -j250 -j150 -j100 -j100	PDF
2SC4393 Contextual Info: TOSHIBA 2SC4393 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4393 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. NF = 1.5dB, \|S2le\|2= 16dB f = 500MHz NF = 1.7dB, \|S2lel2= 10.5dB (f = 1000MHz) 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC4393 500MHz) 1000MHz) 961001EAA2' 2SC4393	PDF
KTC3605U Contextual Info: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.	Original	KTC3605U -j250 -j150 -j100 KTC3605U	PDF

KTC3600U Abstract: j50 transistor Contextual Info: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, \|S21e\| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3600U -j250 -j150 -j100 KTC3600U j50 transistor	PDF
KTC3600S Abstract: transistor j50 Contextual Info: SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.1dB, \|S21e\| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3600S -j250 -j150 -j100 KTC3600S transistor j50	PDF
KTC3600U Abstract: 416 J50 Contextual Info: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, \|S21e\| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3600U -j250 -j150 -j100 KTC3600U 416 J50	PDF
Contextual Info: SEMICONDUCTOR KTC3770UL TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES C 1 ・Low Noise Figure, High Gain. 4 ・NF=1.1dB, \|S21e\|2=11dB f=1GHz . A 2 3 B MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770UL -j250 -j150 -j100 -j100	PDF
USM NO-0 Abstract: transistor j50 power 22E KTC3770U Contextual Info: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, \|S21e\| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3770U -j250 -j150 -j100 USM NO-0 transistor j50 power 22E KTC3770U	PDF
transistor j50 Abstract: J250 j50 transistor KTC3790S Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, \|S21e\| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3790S -j250 -j150 -j100 transistor j50 J250 j50 transistor KTC3790S	PDF
j50 transistor Abstract: KTC3790U KTC3790 Contextual Info: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, \|S21e\| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3790U -j250 -j150 -j100 j50 transistor KTC3790U KTC3790	PDF
j50 transistor Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, \|S21e\|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770F -j250 -j150 -j100 -j100 j50 transistor	PDF
KTC3770V Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770V -j250 -j150 -j100 KTC3770V	PDF
Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, \|S21e\|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770F -j250 -j150 -j100	PDF

J250 100 Search Results

J250 100 Result Highlights (1)

J250 100 Price and Stock

Walsin Technology Corporation 0402N100J250CT

Walsin Technology Corporation 0201N100J250CT

Walsin Technology Corporation 0805N100J250CT

Walsin Technology Corporation RF03N100J250CT

Walsin Technology Corporation RF15N100J250CT

J250 100 Datasheets Context Search

J943-4554

2SC3268

KTC3770S

0.1 j100

KTC3605U

KTC3605T

J250

KTC3770V

2SC4393

KTC3605U

KTC3600U

KTC3600S

KTC3600U

USM NO-0

transistor j50

j50 transistor

j50 transistor

KTC3770V