J200 TRANSISTOR Search Results

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

Contextual Info: Ordering number:ENN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4401] · Low-voltage operation

2SC3772

Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 marking LY
Contextual Info: Ordering number:ENN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications Package Dimensions • VHF/UHF oscillators. unit:mm 2059B Features [2SC4403] 0.15 0.2 0.425 · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ f=0.9GHz

2SC3773

Abstract: marking MY ITR05920 ITR05921 ITR05922 ITR05923 ITR05924
Contextual Info: Ordering number:ENN1946B NPN Epitaxial Planar Silicon Transistor 2SC3773 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions • UHF frequency converters, local oscillators, lownoise amplifiers, wide-band amplifiers.

2SC3771

Abstract: ITR05896 ITR05897 ITR05898 ITR05899 ITR05900
Contextual Info: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .

Contextual Info: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .

Contextual Info: Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C

2SC5231A

Contextual Info: Ordering number : ENA1077A 2SC5231A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SMCP Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slim

j200 transistor

Abstract: it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 FH103 N0199TS ic 741 equivalent IT00303
Contextual Info: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1

2SC4869

Abstract: ITR07686 ITR07687 ITR07688 ITR07689 ITR07690
Contextual Info: Ordering number:ENN5044 NPN Epitaxial Planar Silicon Transistor 2SC4869 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.

Contextual Info: Ordering number:ENN5044 NPN Epitaxial Planar Silicon Transistor 2SC4869 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.

Contextual Info: Ordering number : ENA1090A 2SC5374A RF Transistor 10V, 100mA, fT=5.2GHz, NPN Single SMCP http://onsemi.com Features • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C

KT 839

Abstract: 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS
Contextual Info: Ordering number:ENN5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequency Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz).

2SC5228

Abstract: ITR07930 ITR07931 ITR07932 ITR07933 ITR07934 KT 0803 29 0826 transistor kt 808
Contextual Info: Ordering number:ENN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

Contextual Info: 2SC5347 Ordering number : EN5512B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification

Contextual Info: 2SC4673 Ordering number : EN3927A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features • • • Low noise figure : NF=1.5dB typ f=0.9GHz . High power gain : ⏐S21e⏐2=8.0dB typ (f=0.9GHz).

TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

j200 ON Semiconductor

Abstract: cd 5411 ic j200 transistor j200 2SC4673 ITR07408 ITR07409 ITR07410 ITR07411 KT 828 A
Contextual Info: 2SC4673 Ordering number : EN3927A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features • • • Low noise figure : NF=1.5dB typ f=0.9GHz . High power gain : ⏐S21e⏐2=8.0dB typ (f=0.9GHz).

transistor marking LN4

Contextual Info: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

Contextual Info: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package

ITR06394

Abstract: ITR06395 ITR06396 ITR06397 ITR08172 a1088
Contextual Info: 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

Contextual Info: Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ