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J231
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InterFET
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N-Channel silicon junction field-effect transistor |
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PDF
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93.62KB |
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J231
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InterFET
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N-Channel Silicon Junction Field-Effect Transistor |
Original |
PDF
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1.25MB |
68 |
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J231
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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161.76KB |
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J231
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Unknown
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Basic Transistor and Cross Reference Specification |
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PDF
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43.52KB |
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J231
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
PDF
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73.25KB |
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J231
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Unknown
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Semiconductor Master Cross Reference Guide |
Scan |
PDF
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109.18KB |
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J231
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Siliconix
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MOSPOWER Design Data Book 1983 |
Scan |
PDF
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41.85KB |
1 |
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J231
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Siliconix
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PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS |
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PDF
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213.73KB |
4 |
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J231
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Siliconix
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FET Design Catalogue 1979 |
Scan |
PDF
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163.99KB |
3 |
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J231-18
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Unknown
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Semiconductor Master Cross Reference Guide |
Scan |
PDF
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109.18KB |
1 |
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J231-18
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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161.76KB |
1 |
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J231-18
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Unknown
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Basic Transistor and Cross Reference Specification |
Scan |
PDF
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43.52KB |
1 |
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J231-18
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
PDF
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73.25KB |
1 |
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J231-18
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Siliconix
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FET Design Catalogue 1979 |
Scan |
PDF
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164KB |
3 |
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J231-18
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Siliconix
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MOSPOWER Design Data Book 1983 |
Scan |
PDF
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41.85KB |
1 |
CJ2312
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VBsemi Electronics Co Ltd
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N-Channel 20 V MOSFET in SOT-23 package with RDS(on) of 0.028 ohm at VGS = 4.5 V, continuous drain current of 6 A, and Qg of 8.8 nC, suitable for DC/DC converters and portable load switches. |
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CJ2312
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JCET Group
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N-Channel 20-V DS MOSFET in SOT-23 package with 5 A continuous drain current, 0.0318 Ω typical RDS(on) at VGS = 4.5 V, and 865 pF input capacitance, suitable for DC/DC converters and load switching applications. |
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CJ2310
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JCET Group
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N-Channel MOSFET in SOT-23 package with 60V drain-source voltage, 3A continuous drain current, 105mΩ on-resistance at 10V VGS, and low gate charge, suitable for battery protection and switching applications. |
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PDF
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CJ2312
