J16 TRANSISTOR Search Results
J16 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
J16 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0 |
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2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59 | |
Contextual Info: S^ lvaS t r Ç ^ 2 * W o ^2^ ^0^ . ^ ° ' r .0 0 WVENTRONICS j J16 M O M flO E AuENUE • BOX 1 « • KEMlL WORTW, N .1 n jIL ia • PH rtN F WWJ iT i- W fW * F i * <9<W 7 n -Tf E MAIL: VEH TW O HICS e PR O D IG Y . N ET W W W . V E N TR D N IC S iN C COM |
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capacitor 4700 uF 50V
Abstract: ELECTROLYTIC capacitor, .4700 uF 35V panasonic capacitor lot code ELECTROLYTIC capacitor, .2200 uF 35V TK Capacitors capacitor 2200 uf 25v _ 20% lot date code panasonic panasonic marking code capacitors capacitor 4700 uf 25v capacitor 3300 uF
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K1v4
Abstract: ELECTROLYTIC capacitor, .4700 uF 35V 6800 uF 63 V K1V47 k1v470a EE panasonic Aluminum capacitor marking date code capacitor 6800 uf EIAJ C-3 panasonic fk K1V220
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Contextual Info: 2014 CATALOG Electrolytic Capacitors (Surface Mount Type Aluminum Electrolytic Capacitors) 2014.7 industrial.panasonic.com/ww/ . Conductive Polymer Hybrid Aluminum Electrolytic Capacitors/ZA Surface Mount Type Series: ZA Type: V High temperature Lead-Free reflow |
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AEC-Q200 | |
transistor wm
Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
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Db57clà BLV10 76-j16 7Z78515 transistor wm OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760 | |
K/panasonic capacitors series ka
Abstract: panasonic capacitors k series
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CE-VFK-CE-22 K/panasonic capacitors series ka panasonic capacitors k series | |
smd transistor A7 p37
Abstract: 11.0592mhz crystal oscillator smd led 805 MSC1210EVM transistor SMD p04 49 y6 smd transistor smd g2a schematic diagram wall-wart smd code A9 3 pin transistor msc1210 EVM board
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MSC1210 SBAU073 0592MHz MSC1210EVM. smd transistor A7 p37 11.0592mhz crystal oscillator smd led 805 MSC1210EVM transistor SMD p04 49 y6 smd transistor smd g2a schematic diagram wall-wart smd code A9 3 pin transistor msc1210 EVM board | |
BLV10Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and |
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BLV10 BLV10 | |
Contextual Info: BIPOLARICS, INC. Part Number BPT10E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 2 Watts @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' BPT10E02 is a high performance silicon bipolar transistor |
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BPT10E02 BPT10E02 | |
SOT123 Package
Abstract: MGP255 BLV10 MGP250
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BLV10 SC08a SOT123 Package MGP255 BLV10 MGP250 | |
J226 SMD
Abstract: smd transistor j210 "Power Management IC" 13X2H battery charger schematic IC TX-2 voltmeter smd AAT2601 CMPT3904 TP10
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EV-159 AAT2601 300mA EV159 J226 SMD smd transistor j210 "Power Management IC" 13X2H battery charger schematic IC TX-2 voltmeter smd CMPT3904 TP10 | |
WM8776
Abstract: WM8776-EV2M J33 TRANSISTOR AES/EBU transceiver CS8427 WM8750 WM8776-EV1B LNK61
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WM8776-EV2M WM8776 WM8776-EV2M J33 TRANSISTOR AES/EBU transceiver CS8427 WM8750 WM8776-EV1B LNK61 | |
Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a |
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BLX91A 47ase | |
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CH848BPTContextual Info: CHENMKO ENTERPRISE CO.,LTD CH848BPT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) |
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CH848BPT OT-23 OT-23) CH848BPT | |
202284A
Abstract: J226 SMD
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EV159 AAT2601/2601A AAT2601 AAT2601A 300mA 02284A 202284A J226 SMD | |
PCB Mounted 6.5mm Stereo Socket
Abstract: PCB Mounted 3.5mm Stereo plug 6.5mm stereo socket PCB Mounted 3.5mm Stereo Socket switch 3.5mm pcb mount stereo jack socket 6.5mm headphone jack switch PCB Stereo Socket WM8731-EV1B WM8731-EV1M schematic diagram phono to usb
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WM8731-EV1M WM8731 WM8731. WM8731-EV1B PCB Mounted 6.5mm Stereo Socket PCB Mounted 3.5mm Stereo plug 6.5mm stereo socket PCB Mounted 3.5mm Stereo Socket switch 3.5mm pcb mount stereo jack socket 6.5mm headphone jack switch PCB Stereo Socket WM8731-EV1M schematic diagram phono to usb | |
tmm-104-03-t-d
Abstract: TMS320C6711 DSK TMS320C6000 TMS320C6711 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 samtec TMM-104-03
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SLAU104B TMS320C5000TM TMS320C6000TM 80-pin TMS320 SPRA711) tmm-104-03-t-d TMS320C6711 DSK TMS320C6000 TMS320C6711 1G04 SN74CBT3257 TMS320C5000 TMS320C5402 samtec TMM-104-03 | |
P55i
Abstract: J14-35
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PH2729-8 P55i J14-35 | |
Contextual Info: PH2931-5M Radar Pulsed Power Transistor 5W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation |
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PH2931-5M | |
tmm-104-03-t-d
Abstract: TFM-140-32-S-D-LC 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 TMS320C6000 TMS320C6711 HEADER 2MM 20PIN
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SLAU104C TMS320C5000TM TMS320C6000TM 80-pin TMS320 SPRA711) tmm-104-03-t-d TFM-140-32-S-D-LC 1G04 SN74CBT3257 TMS320 TMS320C5000 TMS320C5402 TMS320C6000 TMS320C6711 HEADER 2MM 20PIN | |
Contextual Info: u <££tni-dona\j.ctoi ZPioaucti, Line. tJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, |
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BLV10 OT123A | |
Contextual Info: PH2931-5M Radar Pulsed Power Transistor 5W, 3.1-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation |
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PH2931-5M | |
Connector-J17
Abstract: tms320c6000 dsk SN74AHC1G04 SN74AHC1G32 SN74CBT3257 TMS320 TMS320C5000 TMS320C6000 TMS320 C6713 manual c6713 schematics
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SLAU104A 12-May-2004 Connector-J17 tms320c6000 dsk SN74AHC1G04 SN74AHC1G32 SN74CBT3257 TMS320 TMS320C5000 TMS320C6000 TMS320 C6713 manual c6713 schematics |