J10 DIODE Search Results
J10 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
J10 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
EM- 546 motor
Abstract: BTa 140 equivalent transistor crossover MJ10009
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mj10009/dmj10009o-204aaem- 546 motor+2 | |
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Contextual Info: 03/11/99 13:56:45 Diodes 885-M6-485B~>68388Bl932 C8H0193Z2 RightFAI Page 082 J05-J10 1.5A SILICON RECURER Features_ • • • • Piasfcc Material - UL Fiammabiiity Classification 94V-0 Surge Overload Rating of 60A Peak Capable of Meeting the Environmental Tests in |
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885-m6-485b68388bl932c8h0193z2j05-j10+3 | |
J406
Abstract: SP40T j18 diode
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m24308/3-2fdswm9040sp40tj406+1 | |
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Contextual Info: _ J05 - J10 1.5 AMPERE SILICON RECTIFIER INCORPORATED Features • • • • Plastic package has U nderwriters Lab flam m ability Classification 94V-0 Surge overload rating o f 60 A m peres peak Capable of m eeting the environm ental tests in M IL-STD-750C |
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mil-std-750cdo-15mil-std-202 | |
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Contextual Info: Application Note 1348 Author: Bob Pospisil 1µF D2 S1AB S1AB J10 J11 VREF 0.1µF 1µF D1 C5 C4 0.01µF C8 C2 J9 J13 V+ DNP DNP C7 0.1µF R4 C1 The ISL28190 and ISL28191 amplifiers feature ultra-low noise, ultra-low distortion, and rail-to-rail output drive |
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isl28190isl2819175vdcisl2819xeval1z+3 | |
ISL70218
Abstract: Isl70218sr ISL70218SRHMEVAL1Z
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isl70218srh1/10wan1653isl70218srhmeval1z+2 | |
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Contextual Info: Application Note 1888 ISL70244SEH Evaluation Board User’s Guide J7 J5 Reference Documents V+ J8 J6 C2 C4 1µF 1µF J9 VREF J10 100 100 V- R11 The ISL70244SEHEV1Z evaluation platform is designed to evaluate the ISL70244SEH. The ISL70244SEH contains two high speed and low power op amps designed to take advantage |
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isl70244sehisl70244sehev1z1/10wan1888 | |
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Contextual Info: Application Note 1669 ISL70227SRH Evaluation Board User’s Guide C4 1µF J9 VREF J10 100 100 R11 C2 1µF D1 C5 Evaluation Board Key Features V+ J8 J6 0.1µF • ISL70227SRH Data Sheet, FN7925 0.01µF C6 0.1µF C7 0.01µF FIGURE 1. POWER SUPPLY CIRCUIT • Wide Supply Operation: 4.5V to 36V |
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isl70227srhfn79251/10wan1669+1 | |
diode KL-03
Abstract: SMD DIODE CCD MARKING SMD MARKING CODE jt D1FJ10 marking code ccd diode smd diode schottky code marking 63 SMD MARKING CODE 501 KL-03 MARKING 1F smd marking code je
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d1fj10tvu-71-j532-1diode kl-03+8 | |
diode A123Contextual Info: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44 |
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mfns1902cat4238dogl128w128-6x8/6x9+2 | |
j73 diode
Abstract: wp-35 J57 diode MSA0651 J63-J65 p87 diode J69 DIODE PORT80 p82 diode A11P
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p60/cts0/rts0p61/clk0p20/a0p21/a1+16 | |
resistor 2k2
Abstract: resistor 10k CAP 100nF 50V 0603 J3 DIODE ST CAP 10nF 50V 0603 SANYO 220uF 16V wurth inductor Resistor 6TPE220M wurth
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pm6680asteval-isa053v2qfn-32umk325bj106km+10 | |
DOGM162
Abstract: DOGL128-6 MFNS1902 DOGS102-6 DOGL128 DOGS102 DOGM128 EA DOGS102-6 DOGM132 DOGM128-6
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mfns1902bav99dogm132-5dogm162+8 | |
7343 electrolytic cap
Abstract: resistor resistor 5K6 diode c18 st UMK325BJ106KM 5uH inductor sanyo 330uF tantalum 4TPD330M cap 100nf CAP 4.7uF
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pm6680steval-isa053v1do216aaqfn-32+10 | |
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MJ10006Contextual Info: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed |
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mj10006mj10007 | |
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Contextual Info: User's Guide SLVU368 – March 2010 TPS2456EVM The TPS2456EVM is an evaluation module used to evaluate the TPS2456 Dual 12V Protection/Blocking Controller. The TPS2456 provides hot swap capability and diode Or functions via external Mosfets. The board is configured with the following nominal specifications. |
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slvu368tps2456evmtps2456800ms | |
6A4 DIODE
Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
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1n40011n40021n40031n4004+15 | |
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Contextual Info: 3Z4M 3Z4M Laser Displacement Sensor 3Z4M High Resolution to 10 µ or 50 µ, Gives Precise Linear Output and Displays Distance • Distance is displayed in millimeters on controller ■ Ready-to-use linearized output is both -10 to +10 VDC and 4 to 20 mA ■ Sensing distances of 40 mm and 100 mm |
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1-800-55-omron | |
1N540IContextual Info: CRI MSON SEMI CONDUCTOR INC ^ D Ejssm O Tb 000D343 2514096 C R Ï M S O N SEMI C O N D U C T O R INC • 99D 00343 ~— D T - à f ~ f r r ! ' . i DIODE RECTIFIERS • 1.0A THRU6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6,0 @ TEMP *C 25 25 25 25 25 |
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000d3431n40o1rl2511n5400+6 | |
3Z4M-S01
Abstract: 3Z4M-S22 LASER DISTANCE METER J10 DIODE analog displacement sensor for 0 to 50 mm 3z4m OMRON variable resistor distance sensor with measuring range 30 m 3Z4M-S01-7 linear displacement sensor
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2132-jd1-800-55-omron3z4m-s013z4m-s22+8 | |
DIODE IN4007
Abstract: IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406
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55mmb000d3m31n4q01rl251+16 | |
CHD09122
Abstract: Calmark calmark retainer 617 610 connector 617 connector ss 211
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chd09122000-ss-11calmarkcalmark retainer+3 | |
5B01
Abstract: 5B37 5B47 AC1361 CH10 CH11 U3422 Littelfuse 324 AC1362
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5b08/5b08-mux5b08-muxc29425b01+8 | |
programming Stick pinouts
Abstract: P8051 ATA010A0X3Z LM3100MH LP38693MP-ADJ SW11
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programming stick pinoutsp8051ata010a0x3zlm3100mh+2 | |