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J340
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Sinyork
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Mini size of Discrete semiconductor elements |
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506.15KB |
15 |
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J3-40001
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Signal Technology
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50 to 500 MHz 3-Port Quadrature Hybrid |
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33.51KB |
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J34016H00-60N
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Laird Technologies
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RF Antennas, RF/IF and RFID, ANT SECTOR 16DB HPOL |
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2 |
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J34016V00-90N
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Laird Technologies
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RF Antennas, RF/IF and RFID, ANT SECTOR 16DB VPOL |
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CJ3407
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JCET Group
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P-Channel Enhancement Mode MOSFET in SOT-23 package with -30V Drain-Source Voltage, -4.1A continuous drain current, and low on-resistance of 60 mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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CJ3401A
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JCET Group
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P-Channel Enhancement Mode MOSFET in SOT-23 package, with -30V Drain-Source Voltage, -4.2A continuous drain current, and 60mΩ typical RDS(on) at -10V VGS. |
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JMTJ3407A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -30V drain-source voltage, -4.1A continuous drain current, and low RDS(ON) of 46mΩ at VGS = -10V, available in SOT-23-3L package. |
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CJ3402
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JCET Group
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N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 4A continuous drain current, and on-resistance of 55mΩ at 10V, suitable for load switch and PWM applications. |
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JMTJ3400A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 5.8A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 26.7mΩ at VGS=10V, available in SOT-23-3L package, suitable for load switching, PWM applications, and power management. |
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CJ3400A
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JCET Group
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N-channel enhancement mode MOSFET in SOT-23 package with 30 V drain-source voltage, 5.8 A continuous drain current, and low on-resistance of 32 mΩ at 10 V gate-source voltage. |
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CJ3401
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JCET Group
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CJ3401 P-Channel Enhancement Mode MOSFET in SOT-23 package with -30V drain-source voltage, -4.2A continuous drain current, and low on-resistance of 65mΩ at VGS=-10V, suitable for high-density power management applications. |
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CJ3406
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JCET Group
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N-channel enhancement mode MOSFET in SOT-23 package with 30V drain-source voltage, 3.6A continuous drain current, and low on-resistance of 65mΩ at 10V gate-source voltage. |
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JMTJ3401B
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTJ3401B in SOT-23-3L package with -30V drain-to-source voltage, -4A continuous drain current, and low RDS(ON) of less than 96mΩ at VGS = -2.5V. |
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CJ3404
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JCET Group
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N-channel enhancement mode MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low RDS(on) of 30mΩ at VGS=10V, suitable for load switch and PWM applications. |
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JMTJ3401A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.2A continuous drain current, and low on-resistance of less than 68mΩ at VGS = -2.5V, available in SOT-23-3L package. |
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AD-CJ3400
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JCET Group
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N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low on-state resistance of 35mΩ at 10V gate-source voltage, qualified to AEC-Q101 standards. |
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CJ3400
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JCET Group
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CJ3400 N-Channel Enhancement Mode MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 35mΩ at VGS=10V, designed for high-density power applications. |
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CJ3407
