J Y W MARKING Search Results

Contextual Info: 1=1 0,1 Ig h 1= 1 0.1 M b \ : ^jl fT^TI tW~WnD . ff^TIH^W fl^~W H^>l H 1 H^~W H^>l H^Wl H^TI H^>l H^~Wl H^Wl fl^Wl ff^TI H^~WH^Wl H^>l Ll fl^W H^TIH^Wl | [ [-c s 3 fl^j~^ii-4T^|^n-n^|^B- ir^j^n- n^p^n tf^p n -ff^pB-V ! ^ ff< pn -n ^ j ^ V i F Y W | ^ i r ^ | ^ i ^ 4 i y T H f , j ^ ^

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF5LC30 300V 5A Feature • trr=30ns • 7 J IÆ -J I/ K • trr=30ns • Ü g S iilŒ 2k V S I I • Dielectric Strength 2kV • T .'f y f y 'r w s • Switching Regulator • 7 5 ^ 7 tv -J L / • Fly W heel

LT 2806

Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Contextual Info: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS

T0247 package

Abstract: alpha marking code ALPHA YEAR CODE K10B60D
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR T0247 PACKAGE MARKING DESCRIPTION oI 1 P o y ^ K 1 0B60D ^ K 1 0B60D FAYWLT FAYWLT O \i \J U Standard product NOTE: LOGO K10B60D F A Y W L&T 1 U° ^ O J 1 o 0 - AOS Logo - Part number code - Fab code - Assembly location code - Year code

Contextual Info: ¿L í,í. >Y :-r m%á 3ÔE » MICRON TECHNOLOGY INC itM^iL V • blllSMñ O G Q S W . .j/,»l-4*>,J"'V 'y y 1 «ÎIRN, ^ -T ta T ^ ÎdâMta * * - ,Æ REPLACES: MT85C16$4 64Kx 16 SRAM SRAM MODULE FEATURES • « • • • • PIN ASSIGNMENT (Top View)

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

Contextual Info: FERYSTER 25±0.2 Mounting holes 13.1-0.2 2 3 10JJ\ 4 J \ f <J J f L6 01.3+0.1 in co o c\j CM CD CM ( N VJ [ { \ f \ \ J f \ \ ) { •s ) 1 □ □ 10 9 8 7 6 5 4 x 5 = 20 Pin 1 marking 18-0.2 16.4 min. 03 CD o I CO WWW. F K F E R Y S T E R spo lka ja w n a B. i Z . S o b kb w

IC1602

Abstract: IC160Z-0324 bb45 RE32 ic160z-0324-30" 6QZ-0844-4Q IC TT 3043
Contextual Info: IC160Series PLCC YAMAICHI 1.27mm Pitch euecTRONics Features v f r v K i& '6 ^ t £ jL » ^ - r 7 ) n -y a y y ^ J im t h ( H H S M T ^ - r ^ : 5.0mmN te / u tcT * *j 7 $ ^ 7 : 6.0mm) S M S r W R o H S 3 i^ i5 Low-profile design mountable on PCB at height 5.0mm (SMT)

ERA85-009

Contextual Info: ' t y y ÿ ' f # —K : O utline Drawings SCH O TTK Y BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft oi 1 J» 1 9 1 > ■K High reliability by planer design. • Marking ? 3 W :ft5m m b'7f S KM A «TBI 1 0 f l- 0 . l l f l - N . 1 2 Æ -D

Contextual Info: •*» - *•^ ¿ a ir [ j ' Y 0%T80^ T““* Y U W h w ¿’“ 'i W A D V A N C E D C Y 7 C 6 4 2 1 1 /1 2 /1 3 IN F O R M A T IO N C Y 7 C 6 4 3 1 1 /1 2 /1 3 CY7C64211/12/13 CY7C64311/12/13 Full-Speed USB 12 Mbps Microcontroller Cypress Sem iconductor Corporation

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

Contextual Info: Super Fast Recovery Diode Single Diode M im SF20L60U OUTLINE U nit I mm Package : FTO-220 W eight 1.9k T y p 4.5 600V 20A Feature • ®M± FRD • High Voltage Super FRD • is . y 'ix • Low Noise • trr=35ns • trr=35ns • 7 J IÆ -J U K • Full Molded

T0247 package

Abstract: marking alpha omega ALPHA YEAR CODE A F U marking code alpha marking code aos Lot Code Week
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Document No. Version PD-01888 Title AOK15BÓOD Marking Description T0247 PACKAGE MARKING DESCRIPTION ^ K 1 5B60D oI 1 1 U ° ^ OJ 1 o 0 p O y ^ K 1 5B60D o FAYWLT \i \J U Standard product NOTE: LOGO K15B60D F A Y W L&T - AOS Logo

2G 103K

Abstract: M123A10BXB AETA
Contextual Info: 1 H igh R e l ia b il it y , C e ra m ic H ig h - R e lia b ilit y GR900 S e r ie s & MlL-C-123 C a p a c it o r s f _ * V j i > ^ jg te a a ^ a K M M ^ p E .J W .iilllMMm ^ | r , % f rP % p ' 1iI »I l fp ^f i^lS lW. ^WM iW m V % 5 | J «• t ' t j L " *fc$

Contextual Info: Super Fast Recovery Diode Twin Diode W tm OUTLINE SF5LC30 300V 5A Feature • trr=30ns • 71[Æ -JUK • ÜËÜBJŒ 2kV SEE • trr= 3 0 n s •X ' C y ^ y ^ ' m M • S w itc h in g R eg u lator • 7=5'Cfo— \j • Fly W heel • ÌM .0 A J M 3 • H om e A p p lia n c e , O ffice A u to m a tio n , Lig h tin g

marking vap

Contextual Info: Fu|l Electric Co ,L td . They ifiall be neithe r r e p r o d u c e d , c o p i e d , Jpnl, c r dis cJos ed In a n y w a y w h a t 50c ver tor lb«- use of ¿n y Ui 1/ d p j r t y . nor used for tlie n u n u f a c t u r I n g p u r p o & t s w i t h o u t

Contextual Info: INi dooumwl ti fw B t V '. f S r '. i . _• Mh 1* Mvena m r . tototo or In p le rw a tt* • » j d ^ | f c j f ^ | C j w ^ | * j y m right li granted to to u— tr Customer drawing 4 3 2 _ 1_ REVISIO NS SYM D E S C R IP T IO N

MAV-4

Abstract: MAV2 MAV4 MAV1 MAR-6
Contextual Info: M onolithic A mplifiers boo B roadband DC to 2 GHz up to +12.5 dBm output ow m GAIN, dB Typical at MHz . MHz note 1 Typ. Output ir^ut MODEL NO. □ J J □ MAXIMUM r y w i i R , v n M ft K % too 500 1000 2000 — 13.0 8.5 8.0 7.0 _1 MAR-6 J MAR-7 J MAR-8

846C

Abstract: DFN8 3X3
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 3x3, MICRO8 LEADLESS CASE 846C−01 ISSUE D 1 SCALE 4:1 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ INDEX AREA 2X T W Y A J SEATING PLANE AA 8 7 B NOTE 6 6 5 0.15 T K AA C 2X TOP VIEW 0.15 T NOTE 4 0.08 T 0.10 T W Y E 0.05 T W

transistor MWTA 06

Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Contextual Info: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %

smd diode marking 2U

Abstract: marking 2U diode SMD DIODE 2U marking 2U diode smd DIODE smd marking 2U diode MARKING 2U smd 2U diode SMD diode MARK D marking DIODE 2U smd marking 2U
Contextual Info: Super Fast Recovery Diode single Diode m n m o u tlin e Package ! M2F M2FL20U Unit I mm Weight 0.072« T y p M m } 200V 1.5A Feature 0 °— W- • Small SMD • Low Noise • trr=35ns • /J ^ S M D • i& y 'f X • trr=35ns •<ScV f=0.92V • L o w V f=0 .9 2 V

ossd output

Abstract: EN954-1 UZKA2165 UZKA2805 UZKA801 UZKA835 UZKA836 IEC61496-1
Contextual Info: uzka2.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P O “ 20mm BEAM PITCH GLOBAL SAFETY STANDARD CONFORMING LIGHT CURTAIN SENSORS UZKA2 Series CONFORMING TO LATEST INTERNATIONAL SAFETY STANDARDS Global Safety The UZKA2 series complies with the IEC61496-1/-2 international standards, so

sc802

Contextual Info: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.

ERB83-004

Abstract: A342
Contextual Info: E R B 8 3 - 0 0 4 1 7 A '> 3 'yblr— ' V J T ÿ -f =t—F W J& '+ T i : Outline Drawings S C H O TTK Y BARRIER DIODE i Features • 1&VF Low V F i7j\ : Marking • X 4 '& > ? * ) : i - K t f A 5- n - K : 81 Color code : ^>u<- Super high speed switching.