J 6810 Search Results

Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM O S) : 2mA (max.) Operating KM681001P/J-20: 170m A (max.) K M 681001P/J-25: 150mA (max.)

DSAIH0002571

Contextual Info: B K C INTERNATIONAL ~ G3E D j j 117^^ 33 q o o o i l j q ^ T y p e N o .1 N 1 4 3 / -r-à t-ô GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone (617 681-0392 TeleFax (617) 681-9135 Telex 928377

365 pF

Abstract: ETAH
Contextual Info: KM 311 KM 21 CONDENSATEURS POLYCARBONATE METALLISE METALLIZED POLYCARBONATE CAPACITORS D-electnque CARACTERISTIQUES GENERALES .'V'.-"-'-' , j C it GENERAL CHARACTERISTICS Tem péia!ure d'utilisation s'ecnnolog r-or -nducti Tg à 1 sH z J h 1' upOXy pour C ;:

NJM78LR05

Contextual Info: m m w yç-9 m "4-£ ft n ? * c, c- y c.-fr* - a <• * '¥ i ,x „ xasoui8¿wrN a A E xo9oyn8¿*nN o A3 xaso*ri8¿*rN » *a UO 33»x- ri a !S J 3 ^ A O 'f r s m .- d í E ^ w ^ r i ME<-<•O-¿H « . « 68-10S ‘8dlS '8d*<J ‘8dl J na /no/nasoai8¿*rN

KM681001P

Abstract: cs-113-1 KM681001-35 KM681001-25
Contextual Info: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001P/J-20: 170mA (max.) KM681001P/J-25: 150mA (max.)

Contextual Info: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM OS): 2mA (max.) Operating KM6S1001P/J-20:170mA (max.) KM081001P/J-25:150mA (max.)

1N695

Abstract: DSAIH0002555
Contextual Info: IITTTÖB OOOQ333 1 3QE D B K C INTERNATIONAL T - 0 1 ,-0 7 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 \ Î Æ I-j \ j BKC International Electronics Inc. Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES 1N695 TYPE

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred k 5 2 3 1 Mating face according to : MIL-C-24308 / DIN 41652 / CECC 75301 -802 -0 hole iiiiim im iim im iiin T No.1 contact c PCB layout hole component side —t- r5 ^ y to ll J j f Uw [_k i i_ !_ JL .JL

LTS23305

Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
Contextual Info: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N

C S 6822

Abstract: S 6822 7818a 7812a DH 514 89052 DH822 DH 636 MH 74150 60034
Contextual Info: PART NUMBER INDEX Type pg Type CJ 1023 C J 1024 C J 1201 CJ 2002 CJ 2501 CJ 4002 CJ 5001 CJ 8002 C S 1010 C S 1020 C S 1021 C S 1033 C S 1210 C S 1220 C S 1221 C S 1222 C S 1510 C S 1520 C S 1521 C S 1522 C S 1810 C S 1821 C S 1822 C S 2200 C S 2210 C S 2221

IN759A

Abstract: IN759 1N751A-1 1N758A JANTX 1N750A-1 1N752 1N753A-1 1N754A-1 1N755A-1 1N756A-1
Contextual Info: 1 3 E D I 117^^03 QGQOaafi Q | K C INTERNATIONAL State-of-the-Art V O ID L E S S Construction ^1N!750A*1 IN 7 5 Ô A 1 |M y4 W H £ & tW fl« F f e A ® ® ® ® ® I KM U fg j J g S f e , R E L IA B IL IT Y A jS fe , r i p s ' , ^3? 20 Mil Lead Glass Voidless construction

4BB7

Contextual Info: IliLattice ispLSI’and pLSI 3256 High Density Programmable Logic Features_ J Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 128 I/O Pins — 11000 PLD Gates — 384 Registers — High Speed Global Interconnect

Contextual Info: PRODUCT NO. REVISIONS 68105 MO. OF "A" P/N '6 " pos 68105 - 001 4 5.08/.200 7.03/. 219 7.62/. 300 9.6 2 / 3 7 ? 68105 002 6 6 8 !O B -003 8 ¡0.16/. 400 12.16/419 A 3 BY DESCRIPTION REV OATE fH0& RLSD RE i/ISEP PER E C k J ê n o NOTE : 1 SEE PRINT 65043 FOR DETAILED

TEA6811V

Abstract: TEA6810 TEA6810V TEA6811 TEA6821 TEA6821T kia 7208
Contextual Info: Philips Semiconductors Product specification Front-end and PLL synthesizers for . J car radios -r.-* .» , TEA6810V; TEA6811V FEATURES • Synthesizer function which includes a Voltage Controlled Oscillator VCO , dividers, phase detector, charge-pump and in-lock detector

Contextual Info: Lattice ! Corpo?atfont0r ispLSI' 2128E In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC Output Routing Pool ORP | j Output Routing Pool lORP) — — — — —

1N5711 SMD

Abstract: sd101 BKC Semiconductors 1N6263
Contextual Info: DO-35 Glass Ì Applications 1N5711, Ì 1N6263& SD101 series j Schotte Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, high performance replacement for small signal devices. Excellent protection for MOS devices. Used in steering, biasing andcoupling

Contextual Info: L a tti pp \J pLS11016 Droarammable Intearation programmable Larae Large Scale Integration High-Density Programmable Logic Features Functional Block Diagram • PROGRAMMABLE HIGH-DENSITY LOGIC — — — — — Member of Lattice's pLSI Family High-Speed Global Interconnects

Contextual Info: Lattice j Corporatfonît0r ispLSI 2128E In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 6000 PLD Gates — 128 I/O Pins, Eight Dedicated Inputs — 128 Registers

j 6810

Abstract: RESISTOR 218-8 C Scans-0017628 rs tube
Contextual Info: 6HM6 TUNO-SOL N PENTODE M IN IA TU R E TY P E S H A R P -C U TO FF P EN TO D E FOR IF A M P L IF IE R STAGES IN T V RECEIVERS B A S IN G D IA G R A M J E D E C 9P M G LASS B U L B SM ALL BU TTO N 9 P IN B A S E E9-1 O U T L I N E D R A W IN G J E D E C 6 -2

DSAIH00025313

Contextual Info: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.

n38b

Abstract: DSAIH0002540
Contextual Info: B K C INTERNATIONAL 03E D | 117^03 OODDOSt. 7- ^ 1 | d - O J _ Type No. 1 N38B_ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES

Contextual Info: DO-41 Glass 1 Amp I • ' ~ Use Advantages 1N5819 HR Schottky Rectifier I HR j Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss.

Philips 021 LL capacitors

Abstract: marking IRH rht 165 philips RADIAL philips capacitor
Contextual Info: Philips Components Maintenance type Aluminium electrolytic capacitors Radial Standard Long-Life 046 RSL FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Charge and discharge proof - t I i j - $ • Very long useful life: 3000 to 4000 hours at 105 °C,

SMD 437 diode

Abstract: 1N4153UR-1 1N4153 DO-213AA SMD hr BKC Semiconductors
Contextual Info: MINI-MELF-SMD Silicon Diode Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to J A N / T X / TX V and S level p er