J 3000 Search Results

Contextual Info: CERAMIC CHIP / HIGH VOLTAGE C0G DIELECTRIC CAPACITANCE VALUES AND THICKNESS TARGETS in. C,D C,D K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M D,F,G,J,K,M D,F,G,J,K,M D,F,G,J,K,M

Contextual Info: LOWER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 - J 2 ) ( P 4 - P 5 - P 6 ) : (J 3 - J 6 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 -J 1 (P 4 -J 4 ) 2.0 DC RESISTANCE: 3.0 DIELECTRIC WITHSTAND: ; (P 2 -J 2 ) ; (P 5 -J 5 ) ; (P 3 -J 3 ) ; (P 6 -J6 ) ; (P 7 -J 7 ) ; (P 8 -J8 ) P 1 -J1 = P 2 - J 2 = P 3 - J 3 = P 6 - J 6 P 4 —J 4 = P 5 — J 5 = P 7 —J 7 = P 8 — J8

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 - P 3 - P 2 : ( J 6 - J 3 ) (P 6 -P 4 -P 5 ) : (J 2 -J 1 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 )= (P 4 -P 5 )

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 : (J 6 -J 3 : (J 2 -J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 (P 3 -P 1

ad1286

Abstract: S8XC196NP 80C196NP MARK AD9 83C196NP 8XC196NP P648 272459 a3080 A2120-02
Contextual Info: 8XC196NP COMMERCIAL CHMOS 16-BIT MICROCONTROLLER J 25 MHz Operation at 4.5–5.5 Volts J 1 Mbyte of Linear Address Space J Optional 4 Kbytes of ROM J 1000 Bytes of Register RAM J Register-register Architecture J 32 I/O Port Pins J 16 Prioritized Interrupt Sources

Contextual Info: - 'S r T T Y ^ - -4 n rrr^ -J S fT T T ^ - 8 > - js n n n r ^ P2 - -4 n rm - ELECTRICAL SPECIFICATIONS* 1.0 INDUCTANCE (P l- J l) : (P 3 -J 3 ) : ( P 4 -J 4 ) : (P 7 -J 7 ) ! 65 uH TYP 2,0 DC RESISTANCE P 8 -J 8 = P 7 -J 7 i ,5 □ HM MAX P 6 -J 6 = P 3 -J 3

Contextual Info: NOTE: 1.0 C 1, C2, C3, C4 = 0.1 uF, 50V ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 -P 2 (P 5 -P 4 ) (P 7 -P 6 ) (P 9 -P 8 ) : : : : (J 2 -J 1 ) (J 6 -J 3 ) (J 5 -J 4 ) (J 8 -J 7 ) 2.0 INDUCTANCE: (P 3 -P 2 ) ; (P 5 -P 4 ) (P 7 -P 6 ) ; (P 9 -P 8 )

TVR2D

Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (°C> (A) ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 50 j 45 45 45 45 45 50 j 50 j 50 j 50 j 50 j 45 45 45 45 100 503 50 j 50 j 50 j SR400FH-60 SR400FV-70 SR400FV— 80

Contextual Info: NOTE: 1.0 C 1, C2, C3, C4 = 0.1 uF ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 -P 2 (P 5 -P 4 ) (P 7 -P 6 ) (P 9 -P 8 ) : : : : (J 2 -J 1 ) (J 6 -J 3 ) (J 5 -J 4 ) (J 8 -J 7 ) 2.0 INDUCTANCE: (P 3 -P 2 ) ; (P 5 -P 4 ) (P 7 -P 6 ) ; (P 9 -P 8 ) 3.0 LEAKAGE INDUCTANCE:

CCFH0805

Contextual Info: Tol Q Min. nH % (*MHz) Min. SRF CCFH0805-3N3 3.3 @250MHz J,K 50 (MHz) ( ) (mA) >3000 0.07 600 CCFH0805-3N9 3.9 @250MHz J,K 50 >3000 0.08 600 CCFH0805-4N7 4.7 @250MHz J,K 50 >3000 0.09 600 CCFH0805-5N6 5.6 @250MHz J,K 50 >3000 0.11 600 CCFH0805-6N8 6.8 @250MHz

W1A 93

Abstract: SI-3120C SI-3090CA 3050c 3090c 3120C 100C SI-3000C SI-3050C SI-3050CA
Contextual Info: SI — 3000C '> U — X f i f a » 'J 'M t D 5 S S i i / 'J - 1.5A X • ' / Í j i z - J í t , •7 —^ -V , ^ - ^ H t à È Ì r ^ - o T V ' S . ' J i ~ h l * * 5Ë f ê T , = 2 5 * C ) - • m * * I E i ± 5V , 9V , 1 2 V , 1 5 V , 24V <D 5

Contextual Info: lO O O p F j 2 K V ELECTRICAL SPECIFICATIONS: 1.0 NDTES TURNS RATIO: P 6 - P 5 - P 4 ( P 3 -P 2 -P 1 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 1 - J 2 (P 6 -P 4 ) : (J 6 - J 3 ) : (J 2 - J 1 ) (P 6 -P 4 )

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 2 -J 2 = P 1 -J 1 ; P 3 -J 3 = P 4 -J 4 2 .0 DC RESISTANCE: P 1 + P 1 = P 2 - J 2 = P 3 - J 3 = P 4 - J 4 3 .0 COMMON MODE: FREQUENCY M Hz C M A (-d B ) TYP 1 10 10 22 20 28 70 30 200 28 500 18 lg ^ > u U ”Li«rTT\J

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 2 -J 2 = P 5 -J 5 ; P 3 -J 3 = P 4 -J 4 2 .0 DC RESISTANCE: P 2 - J 2 = P 3 - J 3 = P 4 - J 4 = P 5 - J 5 3 .0 COMMON MODE: FREQUENCY M H z C M A (-d B ) 1 10 10 22 20 28 70 30 200 28 500 18 tS u u u o J6 ^ rrrF v

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 TU RN S RATIO: P 6 - P 8 - P 3 : ( J 6 - J 3 ) ( P 2 - P 7 - P 1 ) : (J2 -J1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 8 )= (P 8 -P 3 )

Contextual Info: Rec 1 : 1 E L E C T R IC A L S P E C IF IC A T IO N S 1.0 TURNS RATIO P 6 -P 8 -P 3 : (J 6 -J 3 ) 1CT : 1 ± 37. (P 2 - P 7 -P 1 ) : (J 2 -J 1 ) 1CT : 1.4 ± 37. 2.0 INDUCTANCE ( P 6 - P 3 ) = ( J 6 - J 3 ) lOOuH MIN. @ 0.01V, lOKHz P 6 - P 3 (WITH J 6 AND J 3 SHORT)

Contextual Info: LDWER ROW 1 i 1,4 — I 1 I 1 ELECTRICAL SPECIFICATIONS: OPERATING TEM PERATU RE RANGE: 1.0 TU RN S RATIO: P 2 - P 7 - P 1 : ( J 2 - J 1 ) ( P 3 - P 8 - P 6 ) : (J3 -J6 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )

sfr 135

Abstract: 29 WP 230 sharp tv delay to produce power LH28F160BVHE-BTL90 marking code adi label
Contextual Info: Preliminary Product Stecificwions « Q t B j j j j k f r % jr j> Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 1 6 M 2 M x 8 /1 M x 1 6 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 aiaP71A DD31734 Tbl SHARP LHF16V11

d448

Abstract: d749 D1029 D1030 D1049 d60k
Contextual Info: bl E EUPEC D 3MD3ET7 0GG1331 633 • i U P E C Rectifier diodes Type If r m s m V r rm V rs m = V rrm + I f sm / ¡ 2dt I f avm ^ c V TO It R th J C O utline W j m ax 100 V A V 10 ms, 10 ms, tv i = tv j = tv j m ax tv j max tv j max tv j max 180°el sin.

iCR 406 J

Contextual Info: -«U U U L ^ ELECTRICAL SPECIFICATIONS' □PERATING TEMPERATURE RANGE' -2 0 C NDTE' TD +85C 1,0 PINS WITHOUT ELECTRICAL 1.0 INDUCTANCE' CDNNECTIDNS ARE OMITTED. P 6 -J 6 = P 3 -J 3 j P 2 -J 2 = P 1 -J 1 6 5 uH 0,1V, 10 KHz, noninal @ 25C, 2.0 DC RESISTANCE'

3240c

Abstract: 3090c 3050C a 3240c SI-3240C 3120C SI-3120C A 3050C SI-3090C SI-3240CA
Contextual Info: SI — 3000C '> U — X f i f a » 1.5A 'J 'M t D 5 S S i i / 'J - X • '/Íjiz-Jít, •7 — ^ - V , ^ - ^ H t à È Ì r ^ - o T V ' S . ' J i ~ h l * * 5Ë f ê T, = 2 5 *C)- • m * * I E i ± 5 V , 9 V , 1 2 V , 1 5 V , 2 4 V <D 5

Contextual Info: Bridgelux RS Array Series Product Data Sheet DS25 BXRA-27X-3500-F, BXRA-27X4000-H, BXRA-27x7000-J, BXRA-30X3500-F, BXRA-30X4000-H, BXRA-30X7000-J, BXRA-35X3500-F, BXRA-35X4000 -H, BXRA-35X7000-J, BXRA-40X4000-F, BXRA-40E4500-H, BXRA-40E7500-J, BXRA-5XC4500-F, BXRA-5XC5300-H, BXRA-5XC9000-J