J 122 Search Results

74 hc 589

Abstract: 4by4 multiplexer 224 k 70 4-bit bidirectional shift register 74 194 54 fk
Contextual Info: LOGIC PRODUCT SPECTRUM TYPE 00 01 02 03 F U N C TIO N Quad 2-input N A N D 07 Quad 2-input N O R 54 54 AS BCT J,FK J,FK J,FK,W J,FK,W J,FK J,FK J,FK Quad 2-input N A N D with open-collector Hex inverter J,FK,W J,FK,W J,FK outputs J,FK J,FK J,FK,W J,FK,W Hex inverter with unbuffered outputs

Contextual Info: IBM13M8734HCD 8M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: I -10 | -260 j -360 | -360 j Units j j Device Latency j Clock Frequency 3 j 66 j

tic 122

Contextual Info: Schematic Diagram Surface Mount Common Mode Choke T J J J X Electrical Specifications at 25° C Part Number F-122 DCR Pri. Ind. OCL, Min. Max. j iH (Q) 47 Common Mode Attenuation (dB) Hi-Pot Min. 0.3 ^RMS 100k 1M 10M 30M 50M 100M 300M 500M 500 3 19 32

Contextual Info: Polynomial Table for OS36, 37 and 38 Signal Output TT = A• mV 6 + B·(mV)5 + C·(mV)4 + D·(mV)3 + E·(mV)2 + F·(mV) + CJT OS36-J-50F/10C OS36-J-80F/27C OS36-J-140F/60C OS36-J-180F/90C OS36-J-240F/120C OS36-J-280F/140C OS36-J-340F/170C OS36-J-440F/220C OS36-K-50F/10C

SAA 1350

Abstract: DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr m is isa m Vpmax I fsm & * •e V rc> (A) (/a A) V r (V) T C C ) 1200 1400 1600 200 400 40 40 40 40 40 96c 96c 96c 96c 96c 1200 1200 1200 1200 1200 25 j 25 j 25 j 25 j 25 j 1. 40 1.4 0 1. 40 1. 40 1.4 0 120 120

Contextual Info: =• = IBM13M32734BCE Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: [ -260 Device Latency f X j Clock Frequency 2 j 10 j tAc; j Clock Access Tim e j 7.2 j

Contextual Info: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 | -360 I 3 j 2 ; 2 66 j 100 5 100 j

Contextual Info: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j

Contextual Info: X K /lt U j n tf -f J I/A 3 > ? y v MPW-HV M ETALLIZED POLYPROPYLENE FILM CAPACITORS M P W - H VSERIES ^ - * ♦# ft/ F E A T U R E S • S J i S i l & A ^ I t o T ' J ' i < , T- U I f T k ^ F & i i S S ^ -<>/< ^ ¿1 d r^i Jf|] /$ * i^j S J ± HUES-l~- *C'

Contextual Info: IBM13Q8739CC 8M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 j Units j ! MHz j ; ns jfcK j Clock Frequency 66 ; tcK2

sis 968

Abstract: KXB151D-14A KXB801D-14A BV EI 305 2056 K66188 K66-1
Contextual Info: - 340 - * ± E N B r j r j r jD -14 A ENBr / jr j JB D -I4B 'J 7, 9 :• i l j ¡m]i'\fMí-tT r i\ ■~ 7 -• i 'i-No. 1-166188 • ï ' h b z I . IK i \ /)+■-> ^¡l ; Vi 1 1 DC 1 m A ^ t « V ,|L /: > J ^?iS f f t ^M -t-^ % £ ft; X * ;u * ' :v; x EN Br jr /

EQUIVALENT FOR J175

Abstract: J177 equivalent SST174
Contextual Info: Tem ic J/SST174 Series Siliconix P-Channel JFETs SST174 SST175 SST176 SST177 J174 J175 J176 J177 Product Summary P a rt N u m b e r v GS off (V) J/SST174 5 to 10 J/SST175 3 to 6 J/SST176 1 to 4 J/SST177 0.8 to 2.25 1d (oH) iy p (pA) toN iy p (n s) 85 -1 0

CI25XX

Contextual Info: Customer Information Sheet DRAWING No.: G 125-FVXXX05L0X | — IF IN DOUBT - ASK | g | NOT TO SCALE | THIRD ANGLE PROJECTION | ALL DIMENSIONS IN mm -4.30-— RECOMMENDED PCB LAYOUT (TOTAL No. OF CONTACTS - 2 ) x 0 . 6 2 5 ^ | -*—(j) (j) (j) <j>^<b cb d> d>—

8739c

Contextual Info: IBM13Q8739CC 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8-Byte Dual In-Line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2" ^fcK -10 j Units ; MHz j j C lock Frequency 66 t;x? j Clock Cycle

Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK

Contextual Info: 3 N O . i 2 PART NAME FINISH MATERIAL U L U 4z U o n j \ o y y c r RECEPTACLE HOUSING © R ECEPTA CLE TERMINAL PHOSPHOR BRONZE V — 9 4 V G.F.PRT .Rl ACK -III - R 4 V -0 A U /V fffq j : Q < j L/" 5: Q - J L K 73 J \ - © SHILED COVER I B H STEEL © NUT

Contextual Info: IBM13M16734BCC Preliminary 16M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: 1n ! -2 6 0 ,- 3 6 0 j P C 1 0 0 j j U nits Reg. j Buff. [R e g . I Buff.

c3 MARKING CODE

Abstract: c3 marking
Contextual Info: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113

Contextual Info: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International

toroidal core t20

Contextual Info: € K J L o 'z j j iin ic L t U 7 ~ a S iC f io v c t t e ¿yjRÎACE M o UN]j TOROIDAL INDUCTORS j v plated per MIL-P-81728, sem i-bright. H ousing m aterial is Vectra , a liquid crystal polym er plastic m eeting the requirem ents of MIL-M24519C. Vectra05 can be used continuously at 2 5 4 °C 489°F , has

110T

Abstract: AC03DJM AC03DJM-Z AC03DSM AC03DSMA AC03FJM AC03FJM-Z AC03FSM AC03FSMA lf7a
Contextual Info: 162 — — e A C 0 3 r D, F j J M , o n a t > t i£ NT-7 A C 0 3 r A C 0 3 r D, F j J M - Z 3A K fó , .+' * •> ( UL9 4 V -0 ilü 0 AC0 3 r D, F j J M - Z Ü f f i H H W Vtm A C 0 3 D JM , A C 0 3 D JM - Z A C 0 3 F JM , A C 0 3 F JM - Z Vd sm 500 700

j204 siliconix

Abstract: SST5484
Contextual Info: T e m ic J/SST201 Series Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary P a rt N um ber J/SST201 J/SST202 J/SST204 VGS oir W -0.3 to -1.5 -0 .8 to - 4 -0 .3 to - 2 V(BR)GSS M in (V ) Id ss Min (mA) 0.2 0.9 0.2 0.5 1 0.5 -4 0

6MB150L-120

Abstract: 6MB175L-060 6mb175 6MB 125 S-1 2 0 l 6mb150 6MB150L TA8250 6mb120 6MBI 100 120 52 6mb120f-060
Contextual Info: - 234 - Yv C’> U 3 o M O S Y - H fiS c 7 iJ- * - O U * + # I G BT, KM ° n&m 7 v?] B ^ ffi[È l!S 4 G U B£J U L IS È S A * ) E 8 2 9 8 8 (M ) Gl EU EW uo- WO- (Gj aX ;) BX —i (U Y; ‘¿ j y ' -O- t w y 1 J J E10UO- -j (G Z ) a ite } EC. | G 2 0 - J-

znr varistor

Abstract: ZNR 241 ZNR Transient/Surge Absorbers SCR 213 ERZC20EK681P varistor znr SCR 214 znr 10 ZNR 104 znr 20
Contextual Info: “ZNR” Transient/Surge Absorbers Type E/J “ZNR” Transient/Surge Absorbers, For Thyristor Protection Type: Type: E J Type E Type J ● RoHS compliant “ZNR” Transient / Surge Absorber for thyristors is especially designed to protect SCR power controllers