IXYS DSEP Search Results

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

SOT227B

Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Contextual Info: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]

calculation of IGBT snubber

Abstract: DSEP ISOPLUS247 dt300
Contextual Info: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as

IXAN0060

Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Contextual Info: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim IXAN0060 Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as

IXAN0009

Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Contextual Info: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power

6P060AS

Abstract: marking diode 6a
Contextual Info: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP15-06AS HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips

Contextual Info: DSEP15-06BS HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06BS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips

DSEP15

Contextual Info: DSEP15-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 15 A 15 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: DSEP40-03AS HiPerFRED VRRM = 300 V I FAV = 40 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP40-03AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

DSEP15

Contextual Info: DSEP15-06A HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

Contextual Info: DSEP12-12A HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

Contextual Info: DSEP15-06B HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

dsep30-12cr

Abstract: DHG30I1200HA DSEP30-12A dsep29-12
Contextual Info: DSEP30-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 30 A 15 ns 3 DSEP30-12CR Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DSEP30-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 30 A 15 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips

dsep12-12a

Abstract: DSEP15-12CR 12CR DSEP12-12B DSEP15
Contextual Info: DSEP15-12CR V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 1200 V 15 A 15 ns 3 DSEP15-12CR Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

DSEP2x60-12A

Abstract: dsep2*60-12a DSEP2X61-12A
Contextual Info: DSEP2x60-12A V RRM = 1200 V I FAV = 2x 60 A t rr = 40 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DSEP2x60-12A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips