IXYS DSEI 2X101 Search Results

ixys dsei 2x101

Contextual Info: IXYS _ DSEI 2x101 Fast Recovery Epitaxial Diode FRED VR3M V„RM V V 1200 1200 PI ° DSEI 2x 101-12A Test Conditions If(RMS) Ifbm Tyj —T vjm T c = 50°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by T vjm Ifsm Tvj = 45°C;

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40

ixys dsei

Abstract: IXYS DSEI 2X
Contextual Info: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine

ixys dsei 2x101

Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

2x101-06 200A

Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

QR200

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

IXYS DSEI 2X101-12a

Abstract: ixys dsei 2x101 Dsei 2x101-12A
Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V 2x99 A 40 ns V RRM F(AV)M Preliminary data V rsm V 1200 V rrm Type V 1200 -1 0I t fcl > c.’ .1 ^.1 W1 1 miniBLOC, SOT-227 B ~ 1 1v DSEI 2x101-12A M axim um Rcitings (per diode) Symbol Test C onditions

101-06A

Contextual Info: DIXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 V RRM — IFAVM - 600 V 2x 96 A 35 ns vr Preliminary data V rsm V rrh V V 600 600 _ w DSEI 2x 101-06A Symbol T est C o nd ition s U(RMS) Tyj — T VJM 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

IXYS DSEI 2X

Abstract: DSEI 2X101-06 dsei 101-12a 101-06A E72873 AS1000
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A = 40 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

DSEI 2X101-06

Abstract: 2x101 2x101-06 "SOT-227 B" dimensions 101-06A E72873 2x101-06 200A
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns Preliminary data VRSM VRRM V V 600 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM

DSEI 2X101-06

Abstract: ixys dsei 101-06A E72873 IXYS DSEI 2
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

ixys dsei 2x101

Abstract: dse12x101-06 DSE12X101 ixys dsei 101-06A DSEI 12 06A 2x101 dse1 IXYS DSEI 2X E72873
Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI2x 101 VRRM = 600 V W = 2x 96 A trr = 35 ns m Preliminary data V rsm V rrm V V 600 1-N - |-o DSEI 2x 101-06A Test Conditions Maxim um Ratings (per diode) Ì Frm "i"vj = "Tvjm T c = 7 0 °C ; rectangular, d = 0.5

dsei2x101-02a

Abstract: ixys dsei 1800 IXYS 25C8 0504N
Contextual Info: DSEI2x101-02A QIXYS Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM ^RBM Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRM ^FSM TVJ =45°C ; t = 1 0 m s (50 Hz), sine t = 8 .3 m s (60 Hz), sine 600 660 A A T w = 150°C; t = 1 0 m s (50 Hz), sine

Contextual Info: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Low leakage current Short recovery time

DSEI2X101-06A

Abstract: DSEI2*101-06A 06a marking
Contextual Info: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Low leakage current

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches