IXYS CLASS D SWITCHING AMPLIFIERS Search Results

220N04T2

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTA300N04T2-7 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40

IXTP120N04T2

Abstract: max2847 120a16
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C

IXTP220N04T2

Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40

DS99918C

Abstract: IXTP 220N04T2 220N04T2 IXTP220N04T2
Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2 IXTP220N04T2 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient

220N04

Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V

Contextual Info: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions

IXTP220N04T2

Contextual Info: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 40V = 220A Ω ≤ 3.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTP170N075T2

Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

Contextual Info: IXTA220N04T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) 1 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40

IXTH500N04T2

Abstract: IXTT500N04T2 123B16
Contextual Info: Advance Technical Information IXTH500N04T2 IXTT500N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 500A Ω ≤ 1.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

Contextual Info: Advance Technical Information TrenchTM P & N-Channel Power MOSFET Common Drain Topology FMP76-01T P CH. N CH. - 100V 100V - 54A 62A RDS on 24mΩ Ω 11mΩ Ω trr(typ) 70ns 67ns VDSS 43 5 T1 34 T2 11 ID25 22 ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings

FMP76-01T

Contextual Info: Advance Technical Information TrenchTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 100V 100V - 54A 62A RDS on 24mΩ Ω 11mΩ Ω trr(typ) 70ns 67ns FMP76-01T VDSS 43 5 T1 34 T2 11 ID25 22 ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology P CH. N CH. - 150V 150V - 22A 36A RDS on 110mΩ Ω 40mΩ Ω trr(typ) 228ns 150ns FMP36-015P VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions Maximum Ratings TJ TJM

Ultrafast MOSFET Driver

Abstract: 408CI
Contextual Info: IXDD408PI / 408SI / 408YI / 408CI 8 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V

High Side

Abstract: 759 Power Operational Amplifiers D-68623 IXA611 IXA611P7 IXA611S3 High Current Low Side Driver ST
Contextual Info: IXA611 Preliminary Data Sheet 600mA Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V

LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

mosfet 600V 10A logic level

Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
Contextual Info: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

IXDI509D1

Contextual Info: IXDI509 / IXDN509 9 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 9 Amps • High Peak Output Current: 9A Peak • Wide Operating Range: 4.5V to 35V

HV MOSFET

Contextual Info: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

DSEI12-10A

Abstract: hcpl 314j igbt High Current Low Side Driver ST VCH20
Contextual Info: IXA611 Preliminary Data Sheet 600mA Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V