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    IXTY18P10T Search Results

    IXTY18P10T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTY18P10T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 18A TO-252 Original PDF 6
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    IXTY18P10T Price and Stock

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    IXYS Corporation IXTY18P10T

    MOSFET P-CH 100V 18A TO252
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    DigiKey IXTY18P10T Tube 481 1
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    Mouser Electronics IXTY18P10T 330
    • 1 $4.76
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    Verical IXTY18P10T 78 22
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    Future Electronics IXTY18P10T Tube 24 Weeks 70
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    TTI IXTY18P10T Tube 70 70
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    TME IXTY18P10T 78 1
    • 1 $4.29
    • 10 $2.50
    • 100 $2.33
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    IXYS Corporation IXTY18P10T-TRL

    MOSFET P-CH 100V 18A TO252
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    DigiKey IXTY18P10T-TRL Reel 2,500
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    Mouser Electronics IXTY18P10T-TRL
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    TTI IXTY18P10T-TRL Reel 2,500
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    Littelfuse Inc IXTY18P10T

    Discmsft Pchan-Trench Gate To-252D/ Tube |Littelfuse IXTY18P10T
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    Newark IXTY18P10T Bulk 350
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    RS IXTY18P10T Bulk 8 Weeks 70
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    • 100 $2.79
    • 1000 $2.57
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    Littelfuse Inc IXTY18P10T-TRL

    Ixty18P10T Trl/ Tr |Littelfuse IXTY18P10T-TRL
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    Newark IXTY18P10T-TRL Reel 2,500
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    RS IXTY18P10T-TRL Bulk 8 Weeks 2,500
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    IXTY18P10T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP18P10T

    Contextual Info: IXTY18P10T IXTA18P10T IXTP18P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated -100V -18A Ω 120mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100


    Original     		IXTY18P10T IXTA18P10T IXTP18P10T -100V O-252 O-263 IXTY18P10T 18P10T IXTP18P10T PDF

    Contextual Info: TrenchPTM Power MOSFET VDSS ID25 IXTY18P10T IXTA18P10T IXTP18P10T = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated -100V -18A Ω 120mΩ TO-252 (IXTY) G S D (Tab) Symbol Test Conditions TO-263 AA (IXTA) Maximum Ratings VDSS TJ = 25°C to 150°C -100


    Original     		IXTY18P10T IXTA18P10T IXTP18P10T -100V O-252 O-263 IXTY18P10T 18P10T PDF

    IXTA18P10T

    Abstract: IXTP18P10T
    Contextual Info: IXTY18P10T IXTA18P10T IXTP18P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated -100V -18A Ω 120mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100


    Original     		IXTY18P10T IXTA18P10T IXTP18P10T -100V O-252 O-263 IXTY18P10T 18P10T IXTA18P10T IXTP18P10T PDF

    IXTP18P10T

    Abstract: IXTY18P10T
    Contextual Info: IXTY18P10T IXTA18P10T IXTP18P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on -100V -18A Ω 120mΩ TO-252 (IXTY) P-Channel Enhancement Mode Avalanche Rated G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100


    Original     		IXTY18P10T IXTA18P10T IXTP18P10T -100V O-252 O-263 18P10T IXTP18P10T IXTY18P10T PDF