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    IXTT10P60 Search Results

    IXTT10P60 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT10P60
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 600V 10A TO-268 Original PDF 5
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    IXTT10P60 Price and Stock

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    IXYS Corporation IXTT10P60

    MOSFETs -10 Amps -600V 1 Rds
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    Mouser Electronics IXTT10P60 71
    • 1 $14.72
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    Future Electronics IXTT10P60 Tube 300
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    TTI IXTT10P60 Tube 600 30
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    Littelfuse Inc IXTT10P60

    Trans MOSFET P-CH Si 600V 10A 3-Pin(2+Tab) TO-268
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    Verical IXTT10P60 54 1
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    IXYS Integrated Circuits Division IXTT10P60

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 1OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-268AA
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    Quest Components IXTT10P60 11
    • 1 $78.00
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    IXTT10P60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTT10P60

    Abstract: IXTH10P60 10p60 P-Channel MOSFET 600v 125OC 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
    Contextual Info: IXTH10P60 IXTT10P60 Standard Power MOSFET VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ TO-247 (IXTH) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600 V VGSS Continuous


    Original     		IXTH10P60 IXTT10P60 O-247 -300V 100ms 10P60 IXTT10P60 IXTH10P60 P-Channel MOSFET 600v 125OC 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF

    Contextual Info: IXTH10P60 IXTT10P60 Standard Power MOSFETs VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10P60 IXTT10P60 O-268 062in. O-247) O-268 O-247 O-247 PDF

    IXTH10P60

    Contextual Info: Power MOSFETs IXTT10P60 IXTH10P60 VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT10P60 IXTH10P60 O-268 100ms 10P60 7X-L69 IXTH10P60 PDF