Alternates
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTP14N60PM Search Results

    IXTP14N60PM Equivalents

    Sorry, but there were no results for that search. Please update your search settings or try another search term.

    IXTP14N60PM Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP14N60PM
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7A TO-220 Original PDF 5
    SF Impression Pixel

    IXTP14N60PM Price and Stock

    Select Manufacturer

    IXYS Corporation IXTP14N60PM

    MOSFET N-CH 600V 7A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP14N60PM Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.82
    • 10000 $2.82
    Buy Now
    Mouser Electronics IXTP14N60PM
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.82
    • 10000 $2.82
    Get Quote
    TTI IXTP14N60PM Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.66
    • 10000 $2.66
    Buy Now
    TME IXTP14N60PM 1
    • 1 $3.78
    • 10 $2.99
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
    Get Quote

    Littelfuse Inc IXTP14N60PM

    MOSFET, N-CH, 600V, 7A, TO-220-3;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTP14N60PM Bulk 1
    • 1 $4.77
    • 10 $4.77
    • 100 $4.77
    • 1000 $4.77
    • 10000 $4.77
    Buy Now
    RS IXTP14N60PM Bulk 8 Weeks 50
    • 1 -
    • 10 -
    • 100 $3.80
    • 1000 $3.80
    • 10000 $3.80
    Get Quote
    Onlinecomponents.com IXTP14N60PM
    • 1 -
    • 10 -
    • 100 $2.49
    • 1000 $2.18
    • 10000 $2.04
    Buy Now

    IXTP14N60PM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    14n60

    Abstract: IXTP14N60PM
    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTP14N60PM RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXTP14N60PM 14N60P 12-22-08-G 14n60 IXTP14N60PM PDF

    IXTP14N60PM

    Abstract: 14n60 7A 27
    Contextual Info: IXTP14N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXTP14N60PM 14N60P 12-22-08-G IXTP14N60PM 14n60 7A 27 PDF

    IXTP14N60PM

    Contextual Info: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF