IXTH6N150 Search Results
IXTH6N150 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXTH6N150 | 
 
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247 | Original | 5 | 
IXTH6N150 Price and Stock
IXYS Corporation IXTH6N150MOSFET N-CH 1500V 6A TO247 | 
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IXTH6N150 | 4,820 | 
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Littelfuse Inc IXTH6N150Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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IXTH6N150 | 1,200 | 30 | 
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IXTH6N150 | 1,200 | 50 Weeks | 30 | 
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IXTH6N150 | Bulk | 300 | 
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IXTH6N150 | Bulk | 8 Weeks | 30 | 
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IXTH6N150 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ  | 
 Original  | 
IXTT6N150 IXTH6N150 O-268 6N150 | |
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 Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR  | 
 Original  | 
IXTT6N150 IXTH6N150 O-268 O-247 6N150 | |
IXTH6N150
Abstract: 6n150 
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 Original  | 
IXTH6N150 O-247 6N150 IXTH6N150 6n150 | |
IXTT6N150Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ  | 
 Original  | 
IXTT6N150 IXTH6N150 O-268 O-247 6N150 |